A study on InAlN multi-junction tandem solar cells

2008 Fiscal Year Self-evaluation Report

• Project Area: Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential-
• Project/Area Number: 18069005
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: University of Fukui
• Principal Investigator: YAMAMOTO Akio University of Fukui, 大学院・工学研究科, 教授 (90210517)
• Project Period (FY): 2006 – 2010
• Keywords: 高効率太陽光発電材料・素子 / MOVPE / 結晶成長 / 半導体物性

Research Abstract

InAlNはAl組成のみを変化させることにより禁止帯幅を0.7eVから6.2eVまで大幅に変化させることができることからタンデム太陽電池用材料として最適の材料である。Al組成の異なるInAlNサブセルを10層程度積層することにより50%を超える高効率が実現できる可能性がある。本研究は、InAlN系多接合太陽電池の中心材料であるIn-rich InAlNについて、高品質薄膜結晶の作製、pn接合形成、少数キャリア寿命評価に関する基本技術を確立することにより、超高効率タンデム太陽電池実現の可能性を明らかにする。

Research Products

• [Journal Article] Raman scattering of In-rich Al_xIn_<1-x>N : Unexpected two-mode behavior of A_1(LO) (2009)
  • Author(s): T. T. Kang, A, Hashimoto, A. Yamamoto
  • Journal Title: Physical revew B 79 Pages: 033301
  • Peer Reviewed
• [Journal Article] Atmospheric-pressure MOVPE growth of In-rich InAlN (2008)
  • Author(s): Y. Houchin, A. Hashimoto, A. Yamamoto
  • Journal Title: physica status solidi (c) 5 Pages: 1571-1574
  • Peer Reviewed
• [Journal Article] Band-to-band and inner shell excitation VIS-UV phtoluminescence of quaternary InAlGaN alloys (2006)
  • Author(s): K. Fukui, S. Naoe, K. Okada, S. hamada, H. Hirayama
  • Journal Title: physica status solidi (c) 3 Pages: 1879-1883
  • Peer Reviewed
• [Presentation] Elucidation of obstructing factors in improving MOVPE-grown InN quality (2008)
  • Author(s): A. Yamamoto, K. Sugita, A. Hashimoto
  • Organizer: International Workshop on Nitride Semiconductors 2008
  • Place of Presentation: Montreux, Suitzerland
  • Year and Date: 20081006-10
• [Presentation] Λ study on near-field photoluminescence inhomogeneity in In-rich InAlN (2008)
  • Author(s): T. T. Kang, Y. Houchin, A. Hashimoto, A. Yamamoto
  • Place of Presentation: Montreux Switzerland
  • Year and Date: 20081006-10
• [Presentation] MOVPE GROWTH OF In-RICH InAlN FOR InAlN TANDEM SOLAR CELL (2007)
  • Author(s): Y. Houchin, A. Hashimoto, A. Yamamoto
  • Organizer: 17th Internatoinal Photovoltaic Science and Engineering Conference
  • Year and Date: 2007-12-05
• [Remarks] ホームページ
  • URL: http://fuee.fukui-u.ac.jp/~yamamoto/ind
• [Patent(Industrial Property Rights)] In系III族元素窒化物の製造方法およびその装置 (2009)
  • Inventor(s): 山本あき勇, 橋本明弘
  • Industrial Property Rights Holder: 福井大学
  • Industrial Property Number: 特許, 特願2009-077643
  • Filing Date: 2009-03-26