2010 Fiscal Year Final Research Report
A research on InAlN-based tandem solar cells
| Project Area | Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential- |
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| Project/Area Number |
18069005
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | University of Fukui |
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Principal Investigator |
YAMAMOTO Akio University of Fukui, 大学院・工学研究科, 教授 (90210517)
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| Co-Investigator(Kenkyū-buntansha) |
HASHIMOTO Akihiro 福井大学, 大学院・工学研究科, 准教授 (10251985)
FUKUI Kazutoshi 福井大学, 大学院・工学研究科, 教授 (80156752)
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| Project Period (FY) |
2006 – 2010
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| Keywords | 高効率太陽光発電材料・素子 / InAlN / InGaN / ヘテロ構造 / MOVPE |
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| Research Abstract |
MOVPE growth of InAlN, InGaN and InAlN/InGaN hetero-structures has been studied in order to develop basic technologies for InN-based tandem solar cells. The MOVPE growth of InAlN was performed at 730 Torr at a substrate temperature in the range 600-700°C. A single-crystalline InAlN films with an In content of 1-0.55 were successfully grown by adjusting growth temperature and TMI/(TMI+TMA) molar ratio. Such films showed strong photoluminescence even at room temperature. For InGaN, single crystalline films with full composition range were successfully grown by changing growth temperature and TMI/(TMI+TEG) molar ratio. P-type In_xGa_<1-x>N with In content up to 0.25 was prepared using Cp_2Mg as Mg source. Based on these achievements, a n-In_<0.3>Al_<0.7>N/p-In_<0.2>Ga_<0.8>N hetero-structure was successfully prepared for the first time and its photo-response was confirmed.
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Research Products
(23 results)
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[Presentation] Recent Advances in InN-based Solar Cells2009
Author(s)
A.Yamamoto, Md R.Islam, T.- T.Kang, A.Hashimoto
Organizer
Status and Challenges in InGaN and InAlN Solar Cells, European Materials Research Society 2009 Fall Meeting Warsaw
Place of Presentation
Poland(招待講演)
Year and Date
20090900
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