Epitaxial growth and defect controlling technique of AlGaN with high AlN molar fraction

2008 Fiscal Year Self-evaluation Report

• Project Area: Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential-
• Project/Area Number: 18069006
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Mie University
• Principal Investigator: HIRAMATSU Kazumasa Mie University, 大学院・工学研究科, 教授 (50165205)
• Project Period (FY): 2006 – 2010
• Keywords: 窒化物半導体 / エピタキシャル成長 / 貫通転位密度 / クラック / 反り / 無極性

Research Abstract

窒化物半導体のうち,AlNとGaNとの混晶Al_xGa_<1-x>N(以下,本申請ではAlGaNと略す)は、波長300nm以下の深紫外域の発光・受光素子への応用において非常に重要な材料である。 本研究では、バイオ光化学分野で新たに応用が期待されている波長250から300nmをターゲットとした発光・受光素子の開発を目指して、AlNモル分率x が0.5以上で,転位密度が10^7cm^<-3>以下のAlGaN 成長技術の開発を目的とする。また,点欠陥密度の低減により,真性キャリア密度の低いAlGaN成長技術の開発を目指す。
この目的のために本研究では、サファイア上のAlNエピタキシャル結晶上へのAlN及び高Al 組成AlGaNの低欠陥密度結晶を作製する技術を確立し、さらに深紫外線発光・受光素子の試作により、AlGaN系発光素子の転位密度と発光効率の関係を調べる。

Research Products

• [Journal Article] Gro wth of crack-free AlGaN ons elective-are a-growth GaN (2008)
  • Author(s): H. Miyake, N. Masuda, Y. Ogawahara, M. Narukawa, K. Hiramatsu et al.
  • Journal Title: Journal of Crystal Growth 310 Pages: 4885-4887
  • Peer Reviewed
• [Journal Article] Reactor-pres sure dependence of growthof a-plane Ga N on r-plane sapphire (2008)
  • Author(s): R. Miyagawa, M. Narukawa, B. Ma, H. Miyake and K. Hiramatsu.
  • Journal Title: Journal of Cryst al Growth 310 Pages: 4979-4982
  • Peer Reviewed
• [Journal Article] Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperature AlN buffer layer (2008)
  • Author(s): D. Li, M. Aoki, H. Miyake and K. Hiramatsu
  • Journal Title: Physica Status Solidi (c) 5 Pages: 1818-1821
  • Peer Reviewed
• [Journal Article] Selective area growth of III-nitride and their application for emitting devices (2008)
  • Author(s): K. Hiramatsu, H. Miyake and D. Li
  • Journal Title: Journal of Light & Visual Environment 32 Pages: 177-182
  • Peer Reviewed
• [Journal Article] Supression of c rack generation using high-compressive-s train AlN/Sapphire template for hydride vapor phase epitaxy of thick AlN film (2007)
  • Author(s): K. Tsujisawa, S. Kishino, D. Li, H. Miya ke, K. Hiramatsu et al.
  • Journal Title: Japanese Journal of Applied Physics 46 Pages: L552-L555
  • Peer Reviewed
• [Journal Article] Blue emission from InGaN/GaN hexagonal pyramid structures (2007)
  • Author(s): H. Miyake, K. Nakao and K. Hiramatsu
  • Journal Title: Superlattices and Microstructures 41 Pages: 341-346
  • Peer Reviewed
• [Presentation] HVPE growth of AlN on trench patterned sapphire(招待講演) (2009)
  • Author(s): H. Miyake, Y. Katagiri, K. Okuura and K. Hiramatsu
  • Organizer: SPIE Photonic West
  • Year and Date: 2009-01-26
• [Presentation] HVPE Growth of Crack-free Thick AlN Using Strain-Control Technique (2008)
  • Author(s): H. Miyake, Y. Katagiri, S. Kishino, K. Okuura, and K. Hiramatsu
  • Organizer: International Workshop on Nitride Semiconductors 2008
  • Year and Date: 2008-10-08
• [Presentation] Growth of crack-free AlGaN on selective area growth GaN (2008)
  • Author(s): H. Miyake, N. Masuda, Y. Ogawahara, M. Narukawa, K. Hiramatsu et al.
  • Organizer: 14th International Conference on Metalorganic vapor phase epitaxy
  • Year and Date: 2008-06-04
• [Presentation] Selective area growth of III-nitride and their application for emitting Devices(招待講演) (2007)
  • Author(s): K. Hiramatsu, H. Miyake and D. Li
  • Organizer: 1st International Conference on White LEDs and Solid State Lighting
  • Year and Date: 2007-11-28
• [Presentation] HVPE法によるGaN・AIN成長の現状と課題(招待講演) (2007)
  • Author(s): 平松和政, 劉 玉懐, 三宅秀人
  • Organizer: 第68回応用物理学会学術講演会
  • Year and Date: 2007-09-06
• [Remarks] 研究室HP
  • URL: http://www.opt.elec.mie-u.ac.jp
• [Remarks] 三重大学極限ナノエレクトロニクスセンターHP
  • URL: http://www.mie-u.ac.jp/research/intro/ct0003-00.html