2010 Fiscal Year Final Research Report
Assessment and control of radiative/nonradiative recombination processes in In-rich InGaN and in Al-rich AlGaN
| Project Area | Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential- |
|---|
| Project/Area Number |
18069007
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
|
| Allocation Type | Single-year Grants |
|---|
| Review Section |
Science and Engineering
|
|---|
| Research Institution | Kyoto University |
|---|
Principal Investigator |
KAWAKAMI Yoichi Kyoto University, 大学院・工学研究科, 教授 (30214604)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
FUNATO Mitsuru 京都大学, 大学院・工学研究科, 准教授 (70240827)
|
|---|
| Project Period (FY) |
2006 – 2010
|
| Keywords | InGaN / AlGaN / 輻射再結合 / 非輻射再結合 / 発光機構解明 |
|---|
| Research Abstract |
For high In-content InGaN, we proposed to use {11-22} semipolar planes and demonstrated high radiative recombination probabilities in semipolar InGaN quantum wells (QWs). Furthermore, LEDs emitting in the blue to red spectral region were fabricated on this semipolar {11-22} plane. In addition, to assess optical properties in InGaN QWs, a scanning near-field optical microscope that uses two independent fiber probes was developed, by which carrier dynamics were visualized. For high Al-content AlGaN, we first established the growth method to obtain high quality films on sapphire (0001) substrates. The guideline to extract intense emission from AlGaN QWs grown on the (0001) plane was clarified. Based on this guideline, high power efficiency (max. 40%) and high emission power (max 100mW) were achieved at ~240nm from an AlGaN QW pumped by an electron beam.
|
