Epitaxial Growth of High-Quality AlGaN and Its Application to UV and Deep-UV Light Emitters

2008 Fiscal Year Self-evaluation Report

• Project Area: Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential-
• Project/Area Number: 18069009
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Kogakuin University
• Principal Investigator: KAWANISHI Hideo Kogakuin University, 工学部 (70016658)
• Project Period (FY): 2006 – 2010
• Keywords: 深紫外半導体レーザ / 量子井戸 / 窒化物半導体 / ワイドギャップ / エピタキシャル成長

Research Abstract

本研究では、ワイドバンドギャップ半導体であるAlGaN 窒化物半導体の結晶品質を格段に向上させ、それを利用する事で、世界的なレベルにおいても未開拓な紫外から深紫外域で効率よく動作する光半導体デバイス、特に、本研究では「紫外から深紫外域域の半導体レーザ」に焦点を絞り、それを開拓するための基礎を固めることを目的とする。

Research Products

• [Journal Article] Improvement of Crystal Quality of n-AlGaN by Alternate-Source-Feeding Metal Organic Vapor Phase Epitaxy (2007)
  • Author(s): Ken-ichi Isono*, Eiichiro Niikura, Koichi Murakawa, Fumio Hasegawa, and Hideo Kawanishi
  • Journal Title: Japan J. Appl. Phys. Vol.46 Pages: 5711-5714
• [Journal Article] Reduction of Threading Dislocations in AlGaN/AIN/SiC Epitaxial Layers by Controlled Strain with (AIN Yuu Wakamiya*, Fumio Hasegawa, /GaN) Multi-buffer-layer Structure (2007)
  • Author(s): Kouichi Murakawa*, Eiichiro Niikura, Fumio Hasegawa, and Hideo Kawanishi
  • Journal Title: Japan.J.Appl.Phys. Vol.46 Pages: 3301-3304
• [Journal Article] Tm-mode lasing and anisotropic polarization properties of AlGaN multiple quantum well lasers in deep-ultraviolet spectral region (2007)
  • Author(s): Hideo Kawanishi*, Masanori Senuma, and Takeaki Nukui
  • Journal Title: Proceeding of SPIE Photonics West 2007 Vol.6473 Pages: 64731D
• [Journal Article] Improvement of crystal quality of AIN and AlGaN epitaxial layers by controlling the strain with the (AIN/GaN) multi-buffer layer (2007)
  • Author(s): Eiichiro Niikura*, Kouichi Murakawa, Fumio Hasegawa, and Hideo Kawanishi
  • Journal Title: Journal of Crystal Growth Vol.298 Pages: 345-348
• [Journal Article] Experimental energy difference between heavy- or light-hole valence band and crystal-field split-off-hole valence band in AlxGaN1-xN (2006)
  • Author(s): Hideo Kawanishi*, Eiichiro Niikura, Mao Yamamoto, and Shoichiro Takeda
  • Journal Title: Appl. Phys. Lett. Vol.89 Pages: 251107-1?251107-3
• [Journal Article] Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region (2006)
  • Author(s): Hideo Kawanishi*, Masanori Senuma, Mao Yamamoto, Eiichiro Niikura, and Takeaki Nukui
  • Journal Title: Appl. Phys. Lett Vol.89 Pages: 081121-1?081121-3
• [Journal Article] Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet ( λ ?240 nm) AlGaN multiple-quantum-well lasers (2006)
  • Author(s): Hideo Kawanishi*, Masanori Senuma, and Takeaki Nukui
  • Journal Title: Appl. Phys. Lett. Vol.89 Pages: 041126-1?041126-3
• [Journal Article] 深紫外AlGaN 多重量子井戸半導体レーザー光の光学的異方特性 (2006)
  • Author(s): 川西英雄*、瀬沼正憲、貫井猛晶
  • Journal Title: 日本光学会(応用物理学会)光学 35巻 Pages: 265-267
• [Journal Article] Structure and Properties of Deep-UV AlGaN MQW Laser
  • Author(s): Hideo Kawanishi
  • Journal Title: Proceedings of i-NOW2008 (印刷中)
• [Journal Article] Invesigation on Conductivity at the Gan/AIN/SiC Subsrate interface for Vertical Nitraide Power FETs
  • Author(s): Yuu Wakamiya*, Fumio Hasegawa, Hideo Kawanishi
  • Journal Title: Physica Status Solidi (to be published)
• [Presentation] Extremely Small Edge Dislocation Density of AlN Template Grown on 4H-SiC Substrate by ASFE-MOVPE with (AlN/GaN) MBL Structure (2008)
  • Author(s): Hideo Kawanishi
  • Organizer: IC-MOVPE2008
  • Place of Presentation: フランス、Metz
  • Year and Date: 20080600
• [Presentation] AlN テンプレートの高品質化 (2008)
  • Author(s): 武田、蔦川、安斉、川西
  • Organizer: 2008年秋季応用物理学会
  • Year and Date: 20080000
• [Book] Wide Bandgap Semiconductors(第2章、第6章執筆) (2007)
  • Author(s): K. Takahashi, 他
  • Publisher: Springer
• [Book] ワイドギャップ半導体光・電子デバイス(第二章編集、2.2.4節、5.2.7節執筆) (2006)
  • Author(s): 監修・高橋清
  • Publisher: 森北出版