2010 Fiscal Year Final Research Report
Growth of High Quality AlGaN and its Application to Deep UV LED and LD
| Project Area | Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential- |
|---|
| Project/Area Number |
18069009
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
|
| Allocation Type | Single-year Grants |
|---|
| Review Section |
Science and Engineering
|
|---|
| Research Institution | Kogakuin University |
|---|
Principal Investigator |
KAWANISHI Hideo Kogakuin University, 工学部, 教授 (70016658)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
HONDA Tooru 工学院大学, 工学部, 教授 (20251671)
長谷川 文夫 工学院大学, 工学部, 教授 (70143170)
|
|---|
| Project Period (FY) |
2006 – 2010
|
| Keywords | 窒化物半導体 / 深紫外半導体レーザ / p型不純物 / 炭素 / AlGaN / 交互供給法 |
|---|
| Research Abstract |
AlGaN semiconductor is one of the promising widest band-gap semiconductor, by which UV and deep-UV light emitting devices and also high power electronics devices could be achieved. However, the semiconductor has several difficult problems to be solved, such as (1)How we achieve the high quality AlGaN, (2)How we achieve high carrier density and low resistivity p-type AlGaN for device applications. In this study, we have proposed the "Alternate Source-Feeding Epitaxial technique" by which extremely high quality AlGanN will be achieved. And, We have achieved high carrier density p-type AlGaN with up to 55% of Al solid composition using "Carbon" as an acceptor in the AlGaN, then we have also demonstrated the first p-n junction using the carbon-doped p-type AlGaN.
|
Research Products
(20 results)
