2010 Fiscal Year Final Research Report
Development of basic technology for red to infrared optical devices using AlGaInN system
| Project Area | Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential- |
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| Project/Area Number |
18069010
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Sophia University |
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Principal Investigator |
KISHINO Katsumi Sophia University, 理工学部, 教授 (90134824)
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| Co-Investigator(Kenkyū-buntansha) |
KIKUCHI Akihiko 上智大学, 理工学部, 准教授 (90266073)
NOMURA Ichirou 上智大学, 理工学部, 准教授 (00266074)
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| Project Period (FY) |
2006 – 2010
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| Keywords | AlGaInN / 窒化物半導体 / ナノコラム / 結晶成長 / InN / 分子線エピタキシー / 光源技術 |
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| Research Abstract |
Realizing high-performance of red to near infrared InGaN-based emitters is one of the important challenging issues to be attained in the nitride semiconductor field. For developing the basic technology of the red to infrared emitters, in this study, GaN nanocolumns have been energetically investigated, fabricating regularly arranged InGaN-based nanocolumn LEDs, observing green range optically pumped lasing emissions from the InGaN-based nanocolumn arrays, growing high In-content InGaN on the top of the regularly arranged GaN nanocolumns, demonstrating infrared emissions (1.46 ・m in wavelength) from InGaN-based pn junction nanocolumn LEDs, developing selective area growth of high crystalline-quality InN microcrystals and so on.
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