Development of Watt class high power UV laser diodes

2008 Fiscal Year Self-evaluation Report

• Project Area: Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential-
• Project/Area Number: 18069011
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Meijo University
• Principal Investigator: AMANO Hiroshi Meijo University, 理工学部, 教授 (60202694)
• Project Period (FY): 2006 – 2010
• Keywords: 紫外線レーザ / 窒化アルミニウム / p型 / 結晶欠陥 / 量子効率

Research Abstract

紫外レーザダイオード(LD)は,現在水銀ランプを用いたリソグラフィシステムやエキシマレーザ,炭酸ガスレーザ等のガスレーザを用いた加工システムの小型化・高効率化,角膜治療,皮膚疾患部位や腫瘍部位への照射治療等新しい医療システムの実現,殺菌や空気・水の清浄化等多くの分野への応用が期待されている。本研究ではAlNを含むAlGaN系III族窒化物半導体において,(1)基板結晶の作製,極性制御基板の作製,および(2)高導電性p型およびn型結晶の実現に特化して研究を行い,更にその成果を用いて,(3)波長365nm以下のワットクラスハイパワー紫外LDの実現を目指す。

Research Products

• [Journal Article] AlN and AlGaN by MOVPE for UV light emitting devices (2008)
  • Author(s): H. Amano, M. Imura, M. Iwaya, S. Kamiyama and I. Akasaki
  • Journal Title: Mater. Sci. Forum 590 Pages: 175-210
  • Peer Reviewed
• [Journal Article] Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy (2007)
  • Author(s): M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi and A. Bandoh
  • Journal Title: Jpn. J. Appl. Phys. 46 Pages: 1458-1462
  • Peer Reviewed
• [Journal Article] High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate (2007)
  • Author(s): K. Iida, H. Watanabe, K. Takeda, T. Nagai, T. Sumii, K. Nagamatsu, T. Kawashima, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh
  • Journal Title: Phys. Stat. Sol. (a) 204 Pages: 1848-1852
  • Peer Reviewed
• [Presentation] Growth of Group III Nitrides For UV and Green Light Emitting Devices (2008)
  • Author(s): H. Amano
  • Organizer: The 4th Asian Conference on Crystal Growth and Crystal Technology
  • Place of Presentation: Sendai, Japan
  • Year and Date: 20080500
• [Book] Nitrides with Nonpolar Surfaces, "Metalorganic vapor phase epitaxial growth of nonpolar Al(Ga,In)N films on lattice-mismatched substrates" (2008)
  • Author(s): H. Amano, T. Kawashima, D. Iida, M. Imura, M. Iwaya, S. Kamiyama and I. Akasaki
  • Total Pages: 464
  • Publisher: Wiley-VCH Verlag GmbH & Co. KGaA (Editor(s): T.Paskova)