2010 Fiscal Year Final Research Report
Watt class high power ultraviolet laser diode
Project Area | Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential- |
Project/Area Number |
18069011
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Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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Allocation Type | Single-year Grants |
Review Section |
Science and Engineering
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Research Institution | Meijo University |
Principal Investigator |
AMANO Hiroshi Meijo University, 工学研究科, 教授 (60202694)
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Co-Investigator(Kenkyū-buntansha) |
KAMIYAMA Satoshi 名城大学, 理工学部, 教授 (10340291)
IWAYA Motoaki 名城大学, 理工学部, 准教授 (40367735)
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Project Period (FY) |
2006 – 2010
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Keywords | AlN / AlGaN / MOVPE / UV・DUV / LED・LD |
Research Abstract |
Metalorganic vapor phase epitaxial (MOVPE) system by which AlN and AlGaN can be grown at high temperature was designed and installed. High temperature MOVPE is found to be very effective to grow high-crystalline quality and low residual impurity AlN and AlGaN. By using high temperature MOVPE system, lateral growth technique can be successfully applied to grow low threading dislocation density (TDD) AlN and AlGaN on a sapphire substrate. Multi quantum well (MQW) structures emitting from 230 nm to 345 nm containing different TDD were systematically grown. Internal quantum efficiency (IQE) of these MQW was found to be uniquely dependent on the TDD. UVA laser diode (LD) was fabricated. Injection efficiency and IQE of the UVA LD was characterized. UV/DUV LEDs with external quantum efficiency over 5% were successfully fabricated. High crystalline quality AlN can be grown by close spaced sublimation method with a growth rate as high as 0.6 mm/h.
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Research Products
(10 results)
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[Presentation] Growth and conductivity control of high quality AlGaN and its application to high performance ultraviolet laser diodes2009
Author(s)
H.Amano, S.A.Inada, K.Nagamatsu, K.Takeda, T.Asai, K.Nagata, K.Nonaka, T.Mori, H.Tsuzuki, M.Iwaya, S.Kamiyama, I.Akasaki
Organizer
SIMC-XV 招待講演
Place of Presentation
Vilnius, Lithuania.
Year and Date
2009-06-16
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