RF-MBE Growth of InN and Related Alloys and Fabrication of Quantum Nanostructure

2008 Fiscal Year Self-evaluation Report

• Project Area: Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential-
• Project/Area Number: 18069012
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Ritsumeikan University
• Principal Investigator: NANISHI Yasushi Ritsumeikan University, 理工学部, 教授 (40268157)
• Project Period (FY): 2006 – 2010
• Keywords: InN / RF-MBE / 窒化物半導体 / ナノ構造

Research Abstract

InNのバンドギャップエネルギーが0.65eV程度であることが明らかになり、本材料およびその混晶を利用した新しい窒化物半導体ナノエレクトロニクス応用への期待が一挙に強まっている。本研究では、分解温度が低いために低温成長が要求されるこれらの材料に対し、低温成長とナノレベルの薄膜制御性に優位性をもち、現在までもっとも高い実績を有するRF-MBE法によるアプローチを行い、その過程で、RF-MBE成長におけるこれらの材料に固有の課題を重点的に検討し、デバイス品質の材料とナノ構造を実現するための科学的・技術的知見を得ることを目的とする。

Research Products

• [Journal Article] Indium droplet elimination by radical beam irradiation for reproducible and high-quality growth of InN by RF molecular beam epitaxy (2009)
  • Author(s): T. Yamaguchi and Y. Nanishi
  • Journal Title: Applied Physics Express 2 051001 Pages: 1-3
  • Peer Reviewed
• [Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE (2009)
  • Author(s): T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
  • Journal Title: Proc. of SPIE 7216 72160N Pages: 1-8
  • Peer Reviewed
• [Journal Article] Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns (2008)
  • Author(s): S. Harui, H. Tamiya, T. Akagi, H. Miyake, K. Hiramatsu, T. Araki and Y. Nanishi
  • Journal Title: Jpn. J. Appl. Phys. 47 Pages: 5330-5332
  • Peer Reviewed
• [Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence (2008)
  • Author(s): T. Akagi, K. Kosaka, S. Harui, D. Muto, H. Naoi, T. Araki, Y. Nanishi
  • Journal Title: J. Electronic Materials 37 Pages: 603-606
  • Peer Reviewed
• [Journal Article] Mg-doped N-polar InN Grown by RF-MBE (2007)
  • Author(s): D. Muto, H. Naoi, S. Takado, H. Na, T. Araki, and Y. Nanishi
  • Journal Title: Mater. Res. Soc. Symp. Proc. 955 Pages: 0955-I08-01
  • Peer Reviewed
• [Presentation] Recent Progress of InN and InGaN Growth for Device Applications (2008)
  • Author(s): Y. Nanishi, T. Araki, T. Yamaguchi, D. Muto
  • Organizer: International Workshop on Nitride semiconductors (IWN2008)
  • Place of Presentation: Montreux, Switzerland
  • Year and Date: 20081000
• [Presentation] Potential, Achievements and Issues of InN and Related Alloys for Device Applications (2008)
  • Author(s): Y. Nanishi, D. Muto, M. Noda, S. Harui, T. Yamaguchi, T. Araki
  • Organizer: International Conference on Optical, Optoelectronic and Photonic Materials Applications 2008 (ICOOPMA08)
  • Place of Presentation: Edmonton, Canada
  • Year and Date: 20080700
• [Presentation] Electrical Properties of P-type N-polar InN Grown by RF-MBE (2007)
  • Author(s): D. Muto, H. Naoi, S. Fukumoto, K. M. Yu, N. Miller, R. E. Jones, J. W. Ager III, E. E. Haller, T. Araki, Y. Nanishi, and W. Walukiewicz
  • Organizer: 7th International Conference on Nitride Semiconductors (ICNS-7)
  • Place of Presentation: Las Vegas, USA
  • Year and Date: 20070900
• [Presentation] Polar and Non-polar Growth of InN and InGaN (2007)
  • Author(s): Y. Nanishi, H. Naoi, D. Muto, T. Hioka, Y. Hayakawa, Y. Kumagai, M. Noda, and T. Araki
  • Organizer: The 3rd Asia-Pacific Workshop on Widegap Semiconductors(APWS 2007)
  • Place of Presentation: Jeonju, Korea
  • Year and Date: 20070300
• [Book] Chapter: 1 - Molecular-beam epitaxy of InN in Indium Nitride and Related Alloys (2009)
  • Author(s): Y. Nanishi, T. Araki and T. Yamaguchi (Editors: T. D. Veal, C. F. McConville, and W. J. Schaff)