RF-MBE Growth of InN and Related Alloys and Fabrication of Quantum Nanostructure

2010 Fiscal Year Final Research Report

• Project Area: Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential-
• Project/Area Number: 18069012
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Ritsumeikan University
• Principal Investigator: NANISHI Yasushi Ritsumeikan University, 理工学部, 教授 (40268157)
• Co-Investigator(Kenkyū-buntansha): ARAKI Tsutomu 立命館大学, 理工学, 准教授 (20312126) ; NAOI Hiroyuki 立命館大学, COE推進機構, ポストドクトラルフェロー (10373101) ; HYUNSEOK Na 立命館大学, COE推進機構, ポストドクトラルフェロー (80411239)
• Co-Investigator(Renkei-kenkyūsha): YAMAGUCHI Tomohiro 立命館大学, 総合理工学研究機構, ポストドクトラルフェロー (50454517) ; KANEKO Masamitsu 立命館大学, 総合理工学研究機構, ポストドクトラルフェロー (70374709)
• Research Collaborator: WANG Ke 立命館大学, 総合理工学研究機構, 日本学術振興会特別研究員
• Project Period (FY): 2006 – 2010
• Keywords: InN / RF-MBE / 窒化物半導体 / ナノ構造

Research Abstract

Important intrinsic issues to realize InN-based device application are (1) high density of dislocations, (2) high concentration of residual donors, (3) surface accumulation of carriers, (4) p-type doping and (5) formation of high-quality hetero-interface. Our research is aimed to solve these intrinsic issues by developing advanced RF-MBE growth technique. In this study, we have developed a new InN RF-MBE growth method named DERI (Droplet Elimination by Radical-beam Irradiation), which enable us to obtain high-quality InN, thick InGaN and InN/InGaN multi quantum well structure simply and reproducibly. We have also studied Mg-doping for p-type InN systematically, and evidences for the existence of free holes were successfully obtained.

Research Products

• [Journal Article] Application of Droplet Elimination Process by Radical -Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure (2011)
  • Author(s): T.Yamaguchi, H.Umeda, T.Araki, Y.Nanishi
  • Journal Title: Jpn.J.Appl.Phys. 50巻 Pages: 04DH08/1-04DH08/4
  • Peer Reviewed
• [Journal Article] Mg Doped InN and Confirmation of Free Holes in InN (2011)
  • Author(s): K.Wang, N.Miller, R.Iwamoto, T.Yamaguchi, M.A.Mayer, T.Araki, Y.Nanishi, K.M.Yu, E.E.Haller, W.Walukiewicz, J.W.Ager III
  • Journal Title: Appl.Phys.Lett. 98巻 Pages: 042104/1-042104/3
  • Peer Reviewed
• [Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN (2011)
  • Author(s): K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
  • Journal Title: Jpn.J.Appl.Phys. 50巻 Pages: 01AE02/1-01AE02/4
  • Peer Reviewed
• [Journal Article] New MBE Growth Method for High Quality InN and Related Alloys Using in Situ Monitoring Technology (2010)
  • Author(s): T.Yamaguchi, Y.Nanishi
  • Journal Title: phys.stat.sol.(a) 207巻 Pages: 19-23
  • Peer Reviewed
• [Journal Article] Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy (2009)
  • Author(s): T.Yamaguchi, Y.Nanishi
  • Journal Title: Applied Physics Express 2巻 Pages: 051001-1-"051001-3"
  • Peer Reviewed
• [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures (2011)
  • Author(s): Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki
  • Organizer: Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German-Japanese-Spanish Joint Workshop
  • Place of Presentation: グラナダ(スペイン)(招待講演)
  • Year and Date: 2011-03-17
• [Presentation] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation (2011)
  • Author(s): T.Yamaguchi, Y.Nanishi
  • Organizer: SPIE Photonic West 2011
  • Place of Presentation: サンフランシスコ(アメリカ)(招待講演)
  • Year and Date: 2011-01-24
• [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications (2010)
  • Author(s): Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.Ager III, K.M.Yu, W.Walukiewicz
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: タンパ(アメリカ)(基調講演)
  • Year and Date: 2010-09-21
• [Presentation] Present Status and New Challenges of Nitride Semiconductors for Advanced Electronic Devices (2009)
  • Author(s): Y.Nanishi, T.Yamaguchi
  • Organizer: 2009 E-MRS Fall Meeting
  • Place of Presentation: ワルシャワ(ポーランド)(招待講演)
  • Year and Date: 2009-09-16
• [Presentation] Recent Progress of InN and InGaN Growth for Device Applications (2008)
  • Author(s): Y.Nanishi, T.Araki, T.Yamaguchi, D.Muto
  • Organizer: International Workshop on Nitride semiconductors (IWN2008)
  • Place of Presentation: モントルー(スイス)(招待講演)
  • Year and Date: 2008-10-09
• [Book] Chapter : 1-Molecular-beam epitaxy of InN in Indium Nitride and Related Alloys (Editors : T.D.Veal, C.F.McConville, and W.J.Schaff) (2009)
  • Author(s): Y.Nanishi, T.Araki, T.Yamaguchi
  • Total Pages: 50
  • Publisher: CRC
• [Remarks] ホームページ等
  • URL: http://www.ritsumei.ac.jp/se/re/nanishilab/Nanishi-Lab.html
• [Patent(Industrial Property Rights)] 窒化物半導体薄膜の製造方法 (2009)
  • Inventor(s): 山口智広, 名西〓之
  • Industrial Property Rights Holder: 学校法人立命館
  • Industrial Property Number: 新規性の喪失の例外適用,2009-119315
  • Filing Date: 2009-05-15