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2009 Fiscal Year Self-evaluation Report

Establishing novel methods for spin current generation and manipulation

Planned Research

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Project AreaCreation and control of spin current
Project/Area Number 19048013
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionThe University of Tokyo

Principal Investigator

OTANI Yoshichika  The University of Tokyo, 物性研究所, 教授 (60245610)

Project Period (FY) 2007 – 2010
Keywordsスピントロニクス / スピン注入 / スピン蓄積
Research Abstract

スピン依存伝導を駆動原理とするスピントロニクス素子の開発には、スピン流の生成、輸送、操作、蓄積、そして検出する手法を確立することが必要不可欠である。本研究課題では、スピン流の生成・操作に着目して以下の3つの研究課題に取り組んでいる。
課題1: 強磁性金属を用いない新規なスピン流生成法の一つとして着目されている巨大なスピンホール効果を示す物質探索とその機構解明。
課題2: スピン流の自由度の一つであるスピン偏極ベクトルの電気的制御方法の確立。
課題3: スピン蓄積量の増幅手法の確立を目指した、常伝導体とは異なる電子状態を有する超伝導体へのスピン注入及びスピン蓄積信号の測定手法の確立。

  • Research Products

    (12 results)

All 2010 2009 2008

All Journal Article (6 results) (of which Peer Reviewed: 6 results) Presentation (5 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Spin Hall effect in Molybdenum wires2009

    • Author(s)
      M. Morota, K. Ohnishi, T. Kimura, Y. Otani
    • Journal Title

      J. Appl. Phys. 105

      Pages: 07C712-1~3

    • Peer Reviewed
  • [Journal Article] Giant spin-accumulation signal and pure spin-current-induced reversible magnetization switching2008

    • Author(s)
      T. Yang, T. Kimura, Y. Otani
    • Journal Title

      Nature Physics 4

      Pages: 851-4

    • Peer Reviewed
  • [Journal Article] Improvement of superconductive properties of mesoscopic Nb wires by Ti passivation layers2008

    • Author(s)
      K. Ohnishi, T. Kimura, Y. Otani
    • Journal Title

      Appl. Phys. Exp. 1

      Pages: 021701-1~3

    • Peer Reviewed
  • [Journal Article] Temperature evolution of spin relaxation in NiFe/Cu lateral spin valve2008

    • Author(s)
      T. Kimura, T. Sato, Y. Otani
    • Journal Title

      Phys. Rev. Lett. 100

      Pages: 066602-1~4

    • Peer Reviewed
  • [Journal Article] Current-excited magnetization reversal under in-plane magnetic field in a nanoscaled ferromagnetic wire2008

    • Author(s)
      Y. Togawa, T. Kimura, K. Harada, T. Matsuda, A. Tonomura, Y. Otani, T. Akashi
    • Journal Title

      Appl. Phys. Lett. 92

      Pages: 012505-1~3

    • Peer Reviewed
  • [Journal Article] Spin current absorption and spin Hall effects in ferromagnetic / nonmagnetic hybrid structures(invited)2008

    • Author(s)
      T. Kimura, Y. Otani, L. Vila
    • Journal Title

      J. Appl. Phys. 103

      Pages: 07F310-1~4

    • Peer Reviewed
  • [Presentation] Pure-spin-current induced switching and interface contribution (invited)2010

    • Author(s)
      Y. Otani, T. Yang, Y. Fukuma, L. Wang
    • Organizer
      11th Joint MMM-Intermag Conference
    • Place of Presentation
      Washington, D.C., USA
    • Year and Date
      20100100
  • [Presentation] Pure-spin-current induced magnetization switching (invited)2009

    • Author(s)
      Y. Otani
    • Organizer
      International Workshop on Magnonics: From Fundamentals to Applications
    • Place of Presentation
      Dresden, Germany
    • Year and Date
      20090800
  • [Presentation] Efficient spin accumulation and pure-spin-current-induced magnetization switching (invited)2009

    • Author(s)
      Y. Otani
    • Organizer
      0th International Colloquium on Magnetic Films and Surfaces
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      20090700
  • [Presentation] Reversible spin Hall effects in metallic nano-structures(invited)2008

    • Author(s)
      Y. Otani
    • Organizer
      421st Wilhelm and Else Heraeus Seminar on Spin Hall Effect
    • Place of Presentation
      Bad Honnef, Germany
    • Year and Date
      20081000
  • [Presentation] Spin current generation and manipulation in magnetic and non-magnetic hybrid nano-structures(invited)2008

    • Author(s)
      Y. Otani
    • Organizer
      Spin Phenomena in Reduced Dimensions
    • Place of Presentation
      Regensburg, Germany
    • Year and Date
      20080900
  • [Patent(Industrial Property Rights)] メモリセル、ならびに、磁気メモリ素子2008

    • Inventor(s)
      福間康裕、楊涛、木村崇、大谷義近
    • Industrial Property Rights Holder
      独立行政法人理化学研究所
    • Industrial Property Number
      特願2008-270223
    • Filing Date
      2008-10-17

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Published: 2011-06-18   Modified: 2016-04-21  

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