2010 Fiscal Year Final Research Report
Theory of spin injection and accumulation in nano-hetero structures
| Project Area | Creation and control of spin current |
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| Project/Area Number |
19048022
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Nagoya University |
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Principal Investigator |
INOUE Junichiro Nagoya University, 工学研究科, 教授 (60115532)
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| Co-Investigator(Kenkyū-buntansha) |
KONTNI Hiroshi 名古屋大学, 大学院・理学研究科, 准教授 (90272533)
ITOH Hiroyoshi 関西大学, 理工学部, 准教授 (00293671)
ONARI Seiichiro 名古屋大学, 大学院・工学研究科, 助教 (80402535)
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| Project Period (FY) |
2007 – 2010
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| Keywords | 強磁性半導体接合 / スピン注入 / スピン分極率 / スピンホール効果 / 強磁性体グ / ラフェン接合 / ハーフメタル / 層間交換結合 |
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| Research Abstract |
Electrons have two degrees of freedom, charge and spin. The former is the basis of semiconductor electronics, and the latter is the origin of magnetism and applied to magnets. In normal metals and semiconductors, the spin angular momentum is zero in average, but in ferromagnets, it is non-zero. As a consequence, the current in a ferromagnet has a flow of spins (spin current). In the present research, we have shown that the novel phenomenon called spin Hall effect becomes large in metals. We also have shown that the spin current can be created by current in ferromagnet /semiconductor (graphene) junctions, and that the effect of magnetic field on the current is large in these junctions. The result indicates an applicability of these junctions to novel devices.
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Research Products
(28 results)
