2010 Fiscal Year Final Research Report
Microstructure analysis and spin polarization measurement of high spin polarized materials
| Project Area | Creation and control of spin current |
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| Project/Area Number |
19048029
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
TAKAHASHI Yukiko National Institute for Materials Science, 磁性材料センター, 主幹研究員 (50421392)
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| Co-Investigator(Kenkyū-buntansha) |
FURUBAYASHI Takao 独立行政法人物質・材料研究機構, 磁性材料センター, 主席研究員 (80354348)
HONO Kazuhiro 独立行政法人物質・材料研究機構, 磁性材料センター, フェロー (60229151)
OHKUBO Tadakatsu 独立行政法人物質・材料研究機構, 磁性材料センター, グループリーダー (00242462)
RAJANIKANTH A. 独立行政法人物質・材料研究機構, 若手国際研究センター, 研究員 (40515590)
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| Project Period (FY) |
2007 – 2010
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| Keywords | 高スピン偏極率材料 / 微細構造 / スピントロニクスデバイス |
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| Research Abstract |
To realize high performance spintronics devices, we studied the relationship between microstructure and transport properties of the spintronics devices using highly spin-polarized materials. By the detail microstructure observation of tunneling magnetoresistance (TMR) and current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices using Co-based Heusler alloys, it was found that high degree of L2_1 order was required in the Co-based Heusler alloy electrodes. In addition, a lattice matching between the electrode and spacer materials should be good to get high degree of L2_1 order.
By using the Valet-Fert model taking into account of the spin diffusion length, we estimated the bulk and interface spin asymmetry in the Co_2FeAlSi/Ag/Co_2FeAlSi CPP-GMR device.
Based on these results, we showed the material guideline to realize high GMR in CPP-GMR devices.
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Research Products
(14 results)
