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2009 Fiscal Year Self-evaluation Report

New semiconductor devices using regulated nano materials

Planned Research

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Project AreaNew Materials Science Using Regulated Nano Spaces -Strategy in Ubiquitous Elements
Project/Area Number 19051017
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionNational Institute of Advanced Industrial Science and Technology

Principal Investigator

TOSHIHIKO Kanayama  National Institute of Advanced Industrial Science and Technology, ナノ電子デバイス研究センター, 研究センター長 (70356799)

Project Period (FY) 2007 – 2011
Keywords原子分子処理 / ナノ材料 / 超薄膜
Research Abstract

本研究の目的は、同種元素の組み合わせで金属・半導体・絶縁体が合成できる配列ナノ空間物質の利点を最大限に活用し、ナノスケールの電界効果トランジスタを、シリコン系材料で、異種物質界面の不整合や材料構造のランダムネスを伴わずに作製するための物質構成原理を構築することである。特に、シリコンの配列ナノ空間の内部に遷移金属原子を配置することにより、半導体物質を形成効果トランジスタ動作、即ち、外部電界による伝導度変調が行えることを実証する。さらに、遷移金属内包シリコンクラスターの構造および電子状態が、荷電状態によって変化することを利用し、電界効果の物理的限界を超えうる、半導体デバイスの新動作原理を探索する。

  • Research Products

    (14 results)

All 2010 2009 2008 2007 Other

All Journal Article (5 results) (of which Peer Reviewed: 5 results) Presentation (5 results) Remarks (1 results) Patent(Industrial Property Rights) (3 results)

  • [Journal Article] First principles structure modeling for amorphous Si-rich transition metal silicides2010

    • Author(s)
      Takehide Miyazaki, Noriyuki Uchida, Toshihiko Kanayama
    • Journal Title

      Phys. Status Solidi (c) 7

      Pages: 636-639

    • Peer Reviewed
  • [Journal Article] Structure determination of W-capsulated Si cage clusters by x-ray absorption fine structure spectra2009

    • Author(s)
      Zhihu Sun, Hiroyuki Oyanagi, Noriyuki Uchida, Takehide Miyazaki, Toshihiko Kanayama
    • Journal Title

      J. Phys D: Appl. Phys. 42

      Pages: 015421-1-6

    • Peer Reviewed
  • [Journal Article] Synthesis of New Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters2008

    • Author(s)
      Noriyuki Uchida, Hiroshi Kintou, Yusuke Matsushita, Tetsuya Tada, Toshihiko Kanayama
    • Journal Title

      pplied Physics Express (APEX) 1

      Pages: 121502-1-3

    • Peer Reviewed
  • [Journal Article] First-principles theory for Si-based, atomically thin layered semiconductor crystal2007

    • Author(s)
      Takehide Miyazaki, Toshihiko Kanayama
    • Journal Title

      Applied Physics Letters 91

      Pages: 082107-1-3

    • Peer Reviewed
  • [Journal Article] Local modification of electronic st ructure of Si (111)-7x7 surfaces by forming molybdenum-encapsulating Si clusters2007

    • Author(s)
      Noriyuki Uchida, Hiroshi. Yahata, To shihiko Kanayama, Leonid Bolotov
    • Journal Title

      Applied Physics Letters 91

      Pages: 063109-1-3

    • Peer Reviewed
  • [Presentation] First principles structure modeling for amorphous Si-rich transition metal silicides2009

    • Author(s)
      Takehide Miyazaki, Noriyuki Uchida, Toshihiko Kanayama
    • Organizer
      The 23rd International Conference on Amorphous and Nanocrystalline Semiconductors
    • Place of Presentation
      Utrecht, The Netherlands
    • Year and Date
      20090823-20090828
  • [Presentation] Amorphous Si-Rich Silicide Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters2009

    • Author(s)
      Noriyuki Uchida, Takehide Miyazaki, Toshihiko Kanayama
    • Organizer
      The 23rd International Conference on Amorphous and Nanocrystalline Semiconductors
    • Place of Presentation
      Utrecht, The Netherlands
    • Year and Date
      20090823-20090828
  • [Presentation] Synthesis of Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters2009

    • Author(s)
      Noriyuki Uchida, Yusuke Matsushita, Hiroshi Kintou, Tetsuya Tada, Toshihiko Kanayama
    • Organizer
      International Conference on Nanoscience and Quantum Physics (nanoPHYS'09)
    • Place of Presentation
      Minato-ku, Tokyo, Japan
    • Year and Date
      20090223-20090225
  • [Presentation] Synthesis and Characterization of Clusters Assembled Films Composed of Transition-Metal Encapsulating Si Clusters"2008

    • Author(s)
      Noriyuki Uchida, Hiroshi Kintou, Yusuke Matsushita, Tetsuya Tada, Kazuhiho Kirihara, Hiroyuki Oyanagi, Toshihiko Kanayama
    • Organizer
      2008 International Conference on Solid State Devices and Materials (SSDM 2008)
    • Place of Presentation
      Tsukuba, Ibaraki, Japan
    • Year and Date
      20080923-20080926
  • [Presentation] Formation of Si6 ring clusters stabilized by a transition metal atom2008

    • Author(s)
      Noriyuki Uchida, Yusuke Matsushita, Takehide Miyazaki, Hidefumi Hiura, Toshihiko Kanayama
    • Organizer
      14th International Symposium on Small Particles and Inorganic Clusters
    • Place of Presentation
      Valladolid, Spain
    • Year and Date
      20080915-20080919
  • [Remarks] Phys. Status Solidi (c), 7, 3-4の表紙を遷移金属内包シリコンクラスター物質の第一原理計算に基づく構造図が飾った

  • [Patent(Industrial Property Rights)] 金属珪素化合物薄膜及びその製造方法2009

    • Inventor(s)
      金山敏彦、内田紀行
    • Industrial Property Rights Holder
      (独)産業技術総合研究所
    • Industrial Property Number
      特許・PCT/JP2009/053422
    • Filing Date
      2009-02-25
  • [Patent(Industrial Property Rights)] 薄膜トランジスタ2009

    • Inventor(s)
      内田紀行、金山敏彦
    • Industrial Property Rights Holder
      (独)産業技術総合研究所
    • Industrial Property Number
      特許・特願2009-191603
    • Filing Date
      2009-08-21
  • [Patent(Industrial Property Rights)] 金属珪素化合物薄膜及びその製造方法2008

    • Inventor(s)
      金山敏彦、内田紀行
    • Industrial Property Rights Holder
      (独)産業技術総合研究所
    • Industrial Property Number
      特許・特願2008-048520, 国内優先出願・特願2008-230650, 特願2009-037261
    • Filing Date
      2008-02-28

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Published: 2011-06-18   Modified: 2016-04-21  

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