2011 Fiscal Year Final Research Report
Development of functional thin films modified by nano-dopant
| Project Area | Nano Materials Science for Atomic Scale Modification |
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| Project/Area Number |
19053002
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Nagoya University (2011)
The University of Tokyo (2007-2010) |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
EDAGAWA Keiichi 東京大学, 工学系研究科, 准教授 (20223654)
SUGIYAMA Masakazu 東京大学, 工学系研究科, 准教授 (90323534)
TAKIGAWA Yorinobu 大阪府立大学, 工学研究科, 准教授 (70382231)
OHNISHI Tsuyoshi 独立行政法人物質・材料研究機構, 研究員 (80345230)
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| Project Period (FY) |
2007 – 2011
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| Keywords | 薄膜 / 微細構造 / 点欠陥 / PLD / チタン酸ストロンチウム / マンガン酸ストロンチウム / STEM / 原子構造 |
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| Research Abstract |
We investigated and developed the controlling technique of the thin solid film microstructure by HRTEM, TEM and STEM as followings. In SrTiO_3 homo-epitaxial thin film growth, we developed a technique of controlling Sr/Ti ratio in the films by changing laser fluence. In Sr-excess films, excess SrO planar faults were formed while Sr vacancies are generated in Ti-excess ones in Ti-excess films. In addition, we also developed a technique of decreasing dislocation density in InGaAs films. In SrMnOa films, we systematically investigated a relationship between the defect structure in the films and the valence change of Mn ions, further, the defects structure of oxygen ion sub-lattices.
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