2011 Fiscal Year Final Research Report
Fabrication of functionalized materials by realizing appropriate doping technology
| Project Area | Nano Materials Science for Atomic Scale Modification |
|---|
| Project/Area Number |
19053008
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
|
| Allocation Type | Single-year Grants |
|---|
| Review Section |
Science and Engineering
|
|---|
| Research Institution | National Institute for Materials Science |
|---|
Principal Investigator |
TANIGUCHI Takashi 独立行政法人物質・材料研究機構, 先端材料プロセスユニット, グループリーダー (80354413)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
HIRAGA Keijiro 北見工業大学, 工学部, 教授 (80354190)
YOSHIDA Hidehiro 物質・材料研究機構, 先端材料プロセスユニット, 主幹研究員 (80313021)
SAKAGUCHI Isao 物質・材料研究機構, 先端材料プロセスユニット, 主幹研究員 (20343866)
WADA Yoshiki 物質・材料研究機構, 先端材料プロセスユニット, 主幹研究員 (90343847)
OHASHI Naoki 物質・材料研究機構, 環境・エネルギー部門, 部門長 (60251617)
|
|---|
| Project Period (FY) |
2007 – 2011
|
| Keywords | 機能性セラミックス / 超塑性 / 粒界構造制御 / 超硬質材料 |
|---|
| Research Abstract |
The aim of this study is to obtain high quality functionalized materials by realizing appropriate doping technology under the variety of synthesis process, including high pressure and high temperature process, solid-state reaction, and thin film growth technique. By cooperating with the researchers in theoretical and ultimate structural analysis field, we tried to control the effective doping technology for the functionalized nitride and oxide ceramic materials. Successful doping with large misfit in highly covalent rigid crystals was achieved. Theoretical and structural analyses clearly show the occupancy site in the crystal by defect complex model. This fact suggests the way of functionalization by doping in the large lattice misfit systems. New multifunctional oxide polycrystalline materials have been developed through the atomic modification which controls high temperature matter transport in grain boundary and interface. Synthesis and characterization of oxide semiconductor films were performed aiming to develop electronic devices by utilizing the advantages in the concept of Nano-Dopant.
|
