2011 Fiscal Year Final Research Report
Study on carbon nanotube optoelectronics devices
| Project Area | Carbon nanotube nanoelectronics |
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| Project/Area Number |
19054006
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Nagoya University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
KISHIMOTO Shigeru 名古屋大学, 工学研究科, 助教 (10186215)
OHNO Yutaka 名古屋大学, 工学研究科, 准教授 (10324451)
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| Project Period (FY) |
2007 – 2011
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| Keywords | CNT / 光デバイス / FET / TFT / 電界注入 / pn接合 / 走査型プローブ顕微鏡 / 環境効果 |
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| Research Abstract |
Electroluminescence and photovoltaic effects in the pn junction diodes fabricated by using field-effect doping have been confirmed. The devices showed drain current modulation indicating successful operation of the optoelectronic devices. CNT-TFT integrated circuits consisting of 108 CNT-TFTs fabricated using CNTs grown by PCVD which has the advantage of preferential growth of the CNTs with semiconducting behavior in the FET I-V characteristics have successfully been fabricated with a switching speed of 0.51 μs/gate. The integration scale and switching speed are the best, to our knowledge, among the nanocarbon devices. The effects of the defects in the CNTs on the transistors and existence of the island structure in the CNT network channel were also clarified using scanning probe microscopy.
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