2013 Fiscal Year Final Research Report
Plasma-Surface Interactions during Plasma Etching for Next-Generation Nanoscale Device Fabrication
| Project Area | Creation of Science of Plasma Nano-Interface Interactions |
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| Project/Area Number |
21110008
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| Research Category |
Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Kyoto University |
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Principal Investigator |
ONO Kouichi 京都大学, 工学(系)研究科(研究院), 教授 (30311731)
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| Co-Investigator(Kenkyū-buntansha) |
ERIGUCHI Koji 京都大学, 工学研究科, 准教授 (70419448)
TAKAO Yoshinori 京都大学, 工学研究科, 助教 (80552661)
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| Project Period (FY) |
2009-07-23 – 2014-03-31
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| Keywords | プラズマ加工 / プラズマ化学 / 表面・界面物性 / 半導体超微細化 / 超微細加工技術 / 反応粒子輸送 / プラズマエッチング / プラズマ・表面過程揺動 |
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| Research Abstract |
Nanometer-scale surface roughness has become an important issue to be resolved in the fabrication of nanoscale devices, because the roughness at the feature bottom and sidewalls affects the variability in transistor performance. We have developed a three-dimensional atomic-scale cellular model (ASCeM-3D) based on the Monte Carlo algorithm, to simulate plasma-surface interactions and the nanoscale feature profile evolution during plasma etching of Si in Cl-based plasmas. Numerical results exhibited nanoscale surface roughening and rippling in response to ion incidence angle onto substrate surfaces. The mechanisms for such surface roughening and rippling of etched surfaces were investigated through a comparison with experiments, with the help of a classical molecular dynamics simulation. Based on these understanding, the pulse-bias etching through a repetitive on/off of the rf bias power was demonstrated to be one promising way of reducing the surface roughness during plasma etching.
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