Searching for new materials functions by atomic layer control

2017 Fiscal Year Final Research Report

• Project Area: Exploration of nanostructure-property relationships for materials innovation
• Project/Area Number: 25106007
• Research Category: Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Hokkaido University
• Principal Investigator: Ohta Hiromichi 北海道大学, 電子科学研究所, 教授 (80372530)
• Co-Investigator(Kenkyū-buntansha): 平松 秀典 東京工業大学, 科学技術創成研究院, 准教授 (80598136)
• Co-Investigator(Renkei-kenkyūsha): KATASE TAKAYOSHI 東京工業大学, フロンティア材料研究所, 准教授 (90648388) ; YAMANOUCHI MICHIHIKO 北海道大学, 電子科学研究所, 准教授 (40590899)
• Project Period (FY): 2013-06-28 – 2018-03-31
• Keywords: ナノ層 / 人工超格子 / 電界変調法 / 鉄系超伝導

Outline of Final Research Achievements

In this study, we fabricated “Nano-layers”, which are thin films controlled in the thickness at the atomic level. We searched for new materials functions, and worked on the development of Nanostructure information by providing the nano-layers to other groups. The major results are listed below. [1] We successfully enhanced the thermoelectric power factor of oxide-based superlattices double compared with the bulk. [2] We clarified the origin of carrier mobility suppression of a transparent oxide semiconductor and successfully realized high carrier mobility. [3] We found that two-dimensional electron gas in semiconductor shows high thermoelectric power factor. [4] We realized thin-film devices, which can switch their optical transmission, electrical resistivity, and magnetic properties simultaneously. [5] We realized iron-based superconducting films on the metallic tapes, which showed high critical current density suitable as practical applications.

Free Research Field

材料科学