Development of novel large-area synthetic methods of graphene-related atomic layers

2017 Fiscal Year Final Research Report

• Project Area: Science of Atomic Layer Systems
• Project/Area Number: 25107002
• Research Category: Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Nagoya University
• Principal Investigator: Kusunoki Michiko 名古屋大学, 未来材料・システム研究所, 教授 (10134818)
• Co-Investigator(Kenkyū-buntansha): 斉木 幸一朗 東京大学, 大学院新領域創成科学研究科, 教授 (70143394) ; 野田 優 早稲田大学, 理工学術院, 教授 (50312997) ; 丸山 茂夫 東京大学, 大学院工学系研究科(工学部), 教授 (90209700) ; 北浦 良 名古屋大学, 理学研究科, 准教授 (50394903) ; 依光 英樹 京都大学, 理学研究科, 教授 (00372566)
• Co-Investigator(Renkei-kenkyūsha): SHINOHARA Hisanori 名古屋大学, 理学研究科, 教授 (50132725) ; OHNO Yutaka 名古屋大学, 未来材料・システム研究所, 教授 (10324451)
• Project Period (FY): 2013-06-28 – 2018-03-31
• Keywords: 炭化珪素熱分解法 / 酸化グラフェン還元法 / 化学気相蒸着法 / アルコール科学気相蒸着法 / 有機合成法 / 遷移金属ダイカルコゲナイド

Outline of Final Research Achievements

Through deep discussion between synthetic researchers in the synthesis team, (1)Chemical vapor deposition groups attained synthesis of not only large-area but also high-quality graphene consisting of grains of over 5 nm, also did high speed synthesis for practical application, and single layer WS2 on h-BN substrate showing photoluminescence with narrow width of 22 meV, (2)SiC thermal decomposition group succeeded in synthesizing graphene with wafer size and developed the Rapid cooling method for free standing of graphene on SiC substrate, (3) oxidized graphene films deposited on h-BN films was irradiated by methane plasma, which led to high mobility of 4000-7000cm2/Vs, (4)Organic synthesis group attained synthesis of novel graphene ribbons successively and increase of near infrared radiation. Active supplying these samples to researchers in the other teams and foreign countries led to publishing 130 papers due to the collaborating researches.

Free Research Field

ナノ材料結晶学