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2016 Fiscal Year Annual Research Report

Understanding and device application of the hetero-atomic layers

Planned Research

Project AreaScience of Atomic Layer Systems
Project/Area Number 25107004
Research InstitutionThe University of Tokyo

Principal Investigator

長汐 晃輔  東京大学, 大学院工学系研究科(工学部), 准教授 (20373441)

Co-Investigator(Kenkyū-buntansha) 長谷川 雅考  国立研究開発法人産業技術総合研究所, ナノ材料研究部門, グループ長 (20357776)
上野 啓司  埼玉大学, 理工学研究科, 准教授 (40223482)
塚越 一仁  国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 主任研究者 (50322665)
Project Period (FY) 2013-06-28 – 2018-03-31
Keywords原子層 / 複層化 / トランスポート / 結晶成長
Outline of Annual Research Achievements

4族遷移金属ダイカルコゲナイドの単結晶成長を行い,HfS2については比較的大面積(幅1cm以上)の単結晶薄片成長に成功し,FET評価を進めている。HfSe2も単結晶成長したが,大気中で速やかに劣化してしまうため,FET形成は困難であった。また二硫化タングステン薄膜の原子層堆積装置の作製と立ち上げを行った。多層膜は,バルク単結晶劈開面とほぼ同じラマンスペクトルを示している。両極α-MoTe2 FETを用いたガスセンサの開発を試み,二酸化窒素及びアンモニアガスの検出に成功した。
h-BN単結晶の原子層基板育成技術の高度化として良好な高圧法による高純度単結晶を成長基板に用いたホモエピタキシャル気相成長条件を見出した。また、共焦点顕微ラマン散乱分光装置により、結晶性の向上を見出した。h-BN単結晶の積層欠陥を作らない弱励起での発光特性を観測可能な紫外顕微鏡を開発した。
原子層薄膜にて単層のみを制御性よく酸化させて、ヘテロ構造を形成する技術を見出した。WSe2をチャネルとしたTFTをつくり、これを酸化したところ、1層膜は完全に絶縁化し、2層膜では導電性が増大した。これより酸化膜と導電膜のヘテロ界面で、電荷移動が生じ、p型電荷が注入されることが解った。
CVDグラフェンに補助電極を組み合わせた高分子型有機EL素子を試作し、これまでの2 mm X 5 mmから 3 mm X 40 mmに素子発光面積を拡大した。また新しい応用例の一つとして、グラフェン電極を用いたエレクトロクロミック素子を試作し、調光を実証した。グラフェン合成では、PMMAを塗布した銅箔にマイクロ波プラズマ処理をする新しい合成技術を確立した。
バブルフリーの複層化技術を確立し,2層グラフェンの電流のオンオフ比の大幅な向上に成功した.また,MoS2の界面準位計測から,MoS2自身の欠陥が律速していることがわかった.

Current Status of Research Progress
Current Status of Research Progress

2: Research has progressed on the whole more than it was originally planned.

Reason

応用班及び合成班で高品質結晶を合成が順調に進み,それを電子デバイス応用する流れが確立された.また複層化に対する技術の向上,また講習会によるその技術の広がりにより,得られる知見が増加した.また,応用班として,グラフェンの有機ELの特性の向上を達成している.以上より,おおむね順調に進展していると判断できる.

Strategy for Future Research Activity

新学術全体に対する講習会を開催することで,技術のベースを共有する.また,これまでに得た知見,確立した技術・装置を共有することで,最終年度の研究の進展を早める.

  • Research Products

    (38 results)

All 2017 2016 Other

All Int'l Joint Research (4 results) Journal Article (14 results) (of which Int'l Joint Research: 6 results,  Peer Reviewed: 13 results,  Acknowledgement Compliant: 14 results) Presentation (11 results) (of which Int'l Joint Research: 11 results,  Invited: 11 results) Book (5 results) Remarks (3 results) Funded Workshop (1 results)

  • [Int'l Joint Research] National Chung Hsing University/National Chiao Tung University(台湾)

    • Country Name
      その他の国・地域
    • Counterpart Institution
      National Chung Hsing University/National Chiao Tung University
  • [Int'l Joint Research] MIT(米国)

    • Country Name
      U.S.A.
    • Counterpart Institution
      MIT
  • [Int'l Joint Research] Central South University/SINOPEC(中国)

    • Country Name
      CHINA
    • Counterpart Institution
      Central South University/SINOPEC
  • [Int'l Joint Research] Nanyang Technological University/Institute of Materials Res and Eng(シンガポール)

    • Country Name
      SINGAPORE
    • Counterpart Institution
      Nanyang Technological University/Institute of Materials Res and Eng
  • [Journal Article] Comparisons of magnetoresistance in triangular and rectangular ballistic graphene npn junctions"2016

    • Author(s)
      S. Morikawa, S. Masubuchi, K. Watanabe, T. Taniguchi, and T. Machida
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Pages: 100305

    • DOI

      DOI:10.7567/JJAP.55.100305

    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride2016

    • Author(s)
      Y. Hattori, T. Taniguchi, K. Watanabe and K. Nagashio
    • Journal Title

      Appl. Phys. Lett.

      Volume: 109 Pages: 253111

    • DOI

      DOI:10.1063/1.4972555

    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Two-dimensional MoTe2 materials: From synthesis, identification, and charge transport to electronics applications2016

    • Author(s)
      Y.-M. Chang, C.-Y. Lin, Y.-F. Lin, and K. Tsukagoshi
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 55 Pages: 1102A1

    • DOI

      DOI:10.7567/JJAP.55.1102A1

    • Acknowledgement Compliant
  • [Journal Article] Buffer Layer Engineering on Graphene via Various Oxidation Methods for Atomic Layer Deposition2016

    • Author(s)
      N. Takahashi and K. Nagashio
    • Journal Title

      Appl. Phys. Express

      Volume: 9 Pages: 125101

    • DOI

      DOI:10.7567/APEX.9.125101

    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Anisotropic breakdown strength of single crystal hexagonal Boron Nitride2016

    • Author(s)
      Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio
    • Journal Title

      ACS appl. mater. interfaces

      Volume: 8 Pages: 27877

    • DOI

      DOI:10.1021/acsami.6b06425

    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Synthesis of High-Quality Large-Area Homogenous 1T′ MoTe2 from Chemical Vapor Deposition2016

    • Author(s)
      L. Zhou, A. Zubair, Z. Wang, X. Zhang, F. Ouyang, K. Xu, W. Fang, K. Ueno, J. Li, T. Palacios, J. Kong, and M. S. Dresselhaus
    • Journal Title

      Adv. Mater.,

      Volume: 28 Pages: 9526-9531

    • DOI

      DOI:10.1002/adma.201602687

    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Self-Powered Graphene Thermistor2016

    • Author(s)
      R. Bendi, V. Bhavanasi, K. Parida, V.C. Nguyen, A. Sumboja, K. Tsukagoshi, P.S. Lee
    • Journal Title

      Nano Energy

      Volume: 26 Pages: 586-594

    • DOI

      DOI:10.1016/j.nanoen.2016.06.014

    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning2016

    • Author(s)
      S. Nakaharai, M. Yamamoto, K. Ueno, K. Tsukagoshi
    • Journal Title

      ACS Appl. Mater. Interfaces

      Volume: 8(23) Pages: 14732-14739

    • DOI

      DOI:10.1021/acsami.6b02036

    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Imaging Cyclotron Orbits of Electrons in Graphene2016

    • Author(s)
      S. Bhandari, G.-H. Lee, A. Klales, K. Watanabe, T. Taniguchi, E. Heller, P. Kim, and R. M. Westervelt
    • Journal Title

      Nano Lett.

      Volume: 16(3) Pages: 1690-1694

    • DOI

      DOI:10.1021/acs.nanolett.5b04609

    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Barrier Hole Contacts2016

    • Author(s)
      M. Yamamoto, S. Nakaharai, K. Ueno, K. Tsukagoshi
    • Journal Title

      Nano Lett.

      Volume: 16 Pages: 2720-2727

    • DOI

      DOI:10.1021/acs.nanolett.6b00390

    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Anomalous behavior of 1/f noise in near charge neutrality point2016

    • Author(s)
      S. Takeshita, S. Matsuo, T. Tanaka, S. Nakaharai, K. Tsukagoshi, T. Moriyama, T. Ono, T. Arakawa, K. Kobayashi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 108 Pages: 103106

    • DOI

      DOI:10.1063/1.4943642

    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Charge Transport and Mobility Engineering in Two-dimensional Transition Metal Chalcogenide Semiconductors2016

    • Author(s)
      S.-L. Li, K. Tsukagoshi, E. Orgiu, P. Samorì
    • Journal Title

      Chem. Soc. Rev.

      Volume: 45 Pages: 118-151

    • DOI

      DOI:10.1039/C5CS00517E

    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] High growth rate chemical vapor deposition of graphene under low pressure by RF plasma assistance"2016

    • Author(s)
      R. Kato, S. Minami, Y. Koga, M. Hasegawa
    • Journal Title

      Carbon

      Volume: 96 Pages: 1008-1013

    • DOI

      DOI:10.1016/j.carbon.2015.10.061

    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Nanoscale Control of Rewriteable Doping Patterns in Pristine Graphene/Boron Nitride Heterostructures2016

    • Author(s)
      J. Velasco, L. Ju, D. Wong, S. Kahn, J. Lee, H.-Z. Tsai, C. Germany, S. Wickenburg, J. Lu, T. Taniguchi, K. Watanabe, A. Zettl, F. Wang, and M. F. Crommie
    • Journal Title

      Nano Letters

      Volume: 16 Pages: 1620-1625

    • DOI

      DOI: 10.1021/acs.nanolett.5b04441

    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Presentation] Heterojuctions for atomically thin 2D semiconductors based on two-dimensional transition metal dichalcogenides2016

    • Author(s)
      Kazuhito Tsukagoshi
    • Organizer
      2016 Workshop on Innovative Nanoscale Devices and Systems (WINDS)
    • Place of Presentation
      December 4-9, 2016, Hawaii, USA
    • Year and Date
      2016-12-04 – 2016-12-09
    • Int'l Joint Research / Invited
  • [Presentation] Development of graphene and related materials in TASC and AIST2016

    • Author(s)
      M. Hasegawa
    • Organizer
      Graphene Workshop 2016
    • Place of Presentation
      Hsinchu, Taiwan
    • Year and Date
      2016-11-08 – 2016-11-08
    • Int'l Joint Research / Invited
  • [Presentation] Self-assembled hetero-semiconducting structure based on two-dimensional transition metal dichalcogenides2016

    • Author(s)
      Kazuhito Tsukagoshi, Mahito Yamamoto
    • Organizer
      4th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2016)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2016-11-06 – 2016-11-09
    • Int'l Joint Research / Invited
  • [Presentation] Reliability study on layered 2D insulator2016

    • Author(s)
      Kosuke Nagashio
    • Organizer
      230th Electrochemical Society Meeting
    • Place of Presentation
      Honolulu, Hawaii
    • Year and Date
      2016-10-02 – 2016-10-07
    • Int'l Joint Research / Invited
  • [Presentation] Gap engineering & reliability study for 2D electronics2016

    • Author(s)
      Kosuke Nagashio
    • Organizer
      Graphene week
    • Place of Presentation
      Warsaw, Poland
    • Year and Date
      2016-06-13 – 2016-06-17
    • Int'l Joint Research / Invited
  • [Presentation] Self-assembled Hetero-semiconducting Structure Based on Two-dimensional Transition Metal Dichalcogenides2016

    • Author(s)
      Kazuhito Tsukagoshi
    • Organizer
      Taiwan Consortium of Emergent Crystaline Materials (TCECM 2016
    • Place of Presentation
      Yilan,Taiwan
    • Year and Date
      2016-05-27 – 2016-05-28
    • Int'l Joint Research / Invited
  • [Presentation] Synthesis of High Purity hBN Single Crystals2016

    • Author(s)
      Takashi Taniguchi
    • Organizer
      Taiwan Consortium of Emergent Crystaline Materials (TCECM 2016)
    • Place of Presentation
      Yilan,Taiwan
    • Year and Date
      2016-05-27 – 2016-05-28
    • Int'l Joint Research / Invited
  • [Presentation] Dielectric breakdown of hexagonal Boron Nitride2016

    • Author(s)
      Kosuke Nagashio
    • Organizer
      GM-2016Graphene and related Materials: Properties and Applications
    • Place of Presentation
      Paestum, Italy
    • Year and Date
      2016-05-23 – 2016-05-27
    • Int'l Joint Research / Invited
  • [Presentation] Application of van der Waals 2D materials to atomic layer electronics2016

    • Author(s)
      Keiji Ueno
    • Organizer
      9th International Symposium on Organic Molecular Electronics (ISOME 2016)
    • Place of Presentation
      Niigata, Japan
    • Year and Date
      2016-05-19 – 2016-05-19
    • Int'l Joint Research / Invited
  • [Presentation] Graphene synthesizes using plasma techniques for transparent conductive materials2016

    • Author(s)
      T. Yamada, H. Kato, Y. OKigawa, M. Ishihara, M. Hasegawa
    • Organizer
      E-MRS 2016 SPRING MEETING
    • Place of Presentation
      Lille, France
    • Year and Date
      2016-05-02 – 2016-05-06
    • Int'l Joint Research / Invited
  • [Presentation] Development of graphene and related materials in TASC and AIST2016

    • Author(s)
      M. Hasegawa
    • Organizer
      Graphene 2016
    • Place of Presentation
      Genova, Italy
    • Year and Date
      2016-04-20 – 2016-04-20
    • Int'l Joint Research / Invited
  • [Book] 「電界効果トランジスタにおけるゲートスタック形成と評価」カーボンナノチューブ・グラフェンの応用研究最前線2016

    • Author(s)
      長汐晃輔
    • Total Pages
      pp.168-175
    • Publisher
      エヌ・ティー・エス
  • [Book] 「Metal contacts to Graphene」 2D materials for nanoelectronics, edited by M.Houssa, A. Dimoulas, A. Molle2016

    • Author(s)
      Akira Toriumi, Koske Nagashio
    • Total Pages
      pp.53-78
    • Publisher
      CRC Press
  • [Book] 「カルコゲナイド系層状物質の最新研究」2016

    • Author(s)
      上野啓司,安藤淳,島田敏宏
    • Total Pages
      286
    • Publisher
      シーエムシー出版
  • [Book] 「大面積高速合成」,カーボンナノチューブ・グラフェンの応用研究最前線 (分担執筆), 丸山茂夫監修2016

    • Author(s)
      長谷川雅考
    • Total Pages
      480
    • Publisher
      エヌ・ティー・エス
  • [Book] 「グラフェン透明導電膜利用技術開発」 , カーボンナノチューブ・グラフェンの応用研究最前線 (分担執筆), 丸山茂夫監修2016

    • Author(s)
      沖川侑揮,長谷川雅考
    • Total Pages
      480
    • Publisher
      エヌ・ティー・エス
  • [Remarks] 東京大学 マテリアル工学専攻 長汐研究室

    • URL

      http://webpark1753.sakura.ne.jp/nagashio_lab/

  • [Remarks] NIMS MANA 塚越研究室

    • URL

      http://www.nims.go.jp/pi-ele_g/

  • [Remarks] 埼玉大学 上野研究室

    • URL

      http://surface-www.chem.saitama-u.ac.jp/wiki/

  • [Funded Workshop] Nippon-Taiwan Workshop on Innovation of Emergent Materials2017

    • Place of Presentation
      Kwansei Gakuin University (Kobe Sanda Campus)
    • Year and Date
      2017-02-19 – 2017-02-21

URL: 

Published: 2018-01-16   Modified: 2022-02-16  

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