Understanding and device application of the hetero-atomic layers

2017 Fiscal Year Annual Research Report

• Project Area: Science of Atomic Layer Systems
• Project/Area Number: 25107004
• Research Institution: The University of Tokyo
• Principal Investigator: 長汐 晃輔 東京大学, 大学院工学系研究科(工学部), 准教授 (20373441)
• Co-Investigator(Kenkyū-buntansha): 長谷川 雅考 国立研究開発法人産業技術総合研究所, 材料・化学領域, 研究グループ長 (20357776) ; 上野 啓司 埼玉大学, 理工学研究科, 准教授 (40223482) ; 塚越 一仁 国立研究開発法人物質・材料研究機構, その他部局等, その他研究員 (50322665)
• Project Period (FY): 2013-06-28 – 2018-03-31
• Keywords: 原子層 / 複層化 / 輸送特性 / 結晶育成 / 結晶評価

Outline of Annual Research Achievements

・有機金属及び有機カルコゲン前駆体を用いた遷移金属ダイカルコゲナイド薄膜の低温成長を試みた。ラマン分光及びX線光電子分光による評価を行い，基板温度400℃で良好な組成，結晶性のWS2薄膜が得られることを確認した．
・p型のα-MoTe2とn型のMoS2の各FETを用いたガスセンサ作製を行い，二酸化窒素及びアンモニアガスを曝したときの電流応答の増減が両物質間で反対となることを確認した．
UV照射+導電性ポリマーコーティングによる大面積グラフェン透明導電フィルムの導電性を向上技術（ドーピング法）を開発した．本手法はPETのような樹脂基材でもガラス基材でも有効であり、従来の溶液によるドーピング法と比較してたいへん簡便で，かつ長期安定である．
・原子層研究に広く用いられている高温高圧法により成長した六方晶窒化ホウ素単結晶に特有の不純物セクタの構造を評価するために、エキシトン・不純物発光を元に自動判別する遠紫外発光顕微鏡を開発した．また，本装置を使い共同研究を通して遷移金属ダイカルコゲナイド原子層の光物性に与えるhBN基板の不純物の影響を調べた．
・チャネルに2層グラフェン，絶縁膜にh-BN，電極にグラファイトを用いることで完全2次元FETを作成し，従来の計測周波数範囲において層状ヘテロ界面は電気的に不活性であることが分かった．また，周囲の環境に由来するポテンシャルエネルギーを1meVにまで低下できることが分かった．
・原子膜半導体を用いた自己組織化ヘテロ積層膜の実現と機能化を試みた．WSe2の最表面を，基板加熱とオゾン照射の制御で，１層のみを酸化する技術を開発し，WSe2/WOx積層構造を作製した．これに電極を形成して電気伝導における光応答を観測したところ，シリコンダイオード受光素子の３倍を超える感度特性を有することを見出した．

Research Progress Status

29年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

29年度が最終年度であるため、記入しない。

Research Products

• [Int'l Joint Research] Harvard university/MIT/Rice University(米国)
  • Country Name: U.S.A.
  • Counterpart Institution: Harvard university/MIT/Rice University
  • # of Other Institutions: 3
• [Int'l Joint Research] University of Konstanz(ドイツ)
  • Country Name: GERMANY
  • Counterpart Institution: University of Konstanz
• [Int'l Joint Research] Delft University of Technology(オランダ)
  • Country Name: NETHERLANDS
  • Counterpart Institution: Delft University of Technology
• [Int'l Joint Research] University of Basel(スイス)
  • Country Name: SWITZERLAND
  • Counterpart Institution: University of Basel
• [Journal Article] Molecularly-thin Anatase field-effect transistors fabricated through the solid state transformation of titania nanosheets (2017)
  • Author(s): S. Sekizaki, M. Osada, K. Nagashio
  • Journal Title: Nanoscale, 9, 6471 Volume: 9 Pages: 6471
  • DOI: DOI: 10.1039/C7NR01305A
  • Peer Reviewed
• [Journal Article] Graphene field-effect transistor application-electric band structure of graphene in transistor structure extracted from quantum capacitance (2017)
  • Author(s): Nagashio Kosuke
  • Journal Title: J. Mater. Res Volume: 32 Pages: 64～72
  • DOI: DOI:10.1557/jmr.2016.366
  • Peer Reviewed
• [Journal Article] Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics (2017)
  • Author(s): Fang Nan、Nagashio Kosuke、Toriumi Akira
  • Journal Title: 2D Mater. Volume: 4 Pages: 015035～015035
  • DOI: DOI:10.1088/2053-1583/aa50c4
  • Peer Reviewed
• [Journal Article] Electrical properties of bilayer graphene synthesized using surface wave microwave plasma techniques at low temperature (2017)
  • Author(s): Yamada Takatoshi、Kato Hiromitsu、Okigawa Yuki、Ishihara Masatou、Hasegawa Masataka
  • Journal Title: Nanotechnology Volume: 28 Pages: 025705～025705
  • DOI: DOI:10.1088/1361-6528/28/2/025705
  • Peer Reviewed
• [Journal Article] Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition (2017)
  • Author(s): S. Kurabayashi, and K. Nagashio
  • Journal Title: Nanoscale Volume: 9 Pages: 13264
  • DOI: DOI:10.1039/C7NR05385A
  • Peer Reviewed
• [Journal Article] (Invited) Electrical Integrity and Anisotropy in Dielectric Breakdown of Layered h -BN Insulator (2017)
  • Author(s): Nagashio Kosuke、Hattori Yoshiaki、Takahashi Nobuaki、Taniguchi Takashi、Watanabe Kenji、Bao Jianfeng、Norimatsu Wataru、Kusunoki Michiko
  • Journal Title: ECS Transactions Volume: 79 Pages: 91～97
  • DOI: DOI:10.1149/07901.0091ecst
  • Peer Reviewed
• [Journal Article] Anisotropic etching of graphite and graphene in a remote hydrogen plasma (2017)
  • Author(s): Hug D.、Zihlmann S.、Rehmann M. K.、Kalyoncu Y. B.、Camenzind T. N.、Marot L.、Watanabe K.、Taniguchi T.、Zumbhl D. M.
  • Journal Title: npj 2D Mater. Appl. Volume: 1 Pages: 21
  • DOI: DOI:10.1038/s41699-017-0021-7
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Charged excitons in monolayer WSe2: Experiment and theory (2017)
  • Author(s): E. Courtade, M. Semina, M. Manca, M. M. Glazov, C. Robert, F. Cadiz, G. Wang, T. Taniguchi, K. Watanabe, M. Pierre, W. Escoffier, E. L. Ivchenko, P. Renucci, X. Marie, T. Amand, B. Urbaszek
  • Journal Title: Phys. Rev. B, Volume: 96 Pages: 085302
  • DOI: DOI:10.1103/PhysRevB.96.085302
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Current-Phase Relation of Ballistic Graphene Josephson Junctions (2017)
  • Author(s): Nanda G.、Aguilera-Servin J. L.、Rakyta P.、Kormnyos A.、Kleiner R.、Koelle D.、Watanabe K.、Taniguchi T.、Vandersypen L. M. K.、Goswami S.
  • Journal Title: Nano Lett. Volume: 17 Pages: 3396～3401
  • DOI: DOI:10.1021/acs.nanolett.7b00097
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Disorder from the Bulk Ionic Liquid in Electric Double Layer Transistors (2017)
  • Author(s): Petach Trevor A.、Reich Konstantin V.、Zhang Xiao、Watanabe Kenji、Taniguchi Takashi、Shklovskii Boris I.、Goldhaber-Gordon David
  • Journal Title: ACS Nano Volume: 11 Pages: 8395～8400
  • DOI: DOI:10.1021/acsnano.7b03864
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Disorder-dependent valley properties in monolayer WS2 (2017)
  • Author(s): K. Tran, A. Singh, J. Seifert, Y. Wang, K. Hao, J.-K. Huang, L.-J. Li, T. Taniguchi, K. Watanabe, X. Li
  • Journal Title: Phys. Rev. B, 96, 041302 (2017), DOI:10.1103/PhysRevB.96.041302 Volume: 96 Pages: 041302
  • DOI: DOI:10.1103/PhysRevB.96.041302
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Electrical 2 π phase control of infrared light in a 350-nm footprint using graphene plasmons (2017)
  • Author(s): A. Woessner, Y. Gao, I. Torre, M. B. Lundeberg, C. Tan, K. Watanabe, T. Taniguchi, R. Hillenbrand, J. Hone, M. Polini, F. H. L. Koppens
  • Journal Title: Nat. Photonics Volume: 11 Pages: 421-424
  • DOI: DOI:10.1038/NPHOTON.2017.98
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Electronic transport in helium-ion-beam etched encapsulated graphene nanoribbons (2017)
  • Author(s): Nanda Gaurav、Hlawacek Gregor、Goswami Srijit、Watanabe Kenji、Taniguchi Takashi、Alkemade Paul F.A.
  • Journal Title: Carbon, 119, 419-425 (2017), DOI:10.1016/j.carbon.2017.04.062 Volume: 119 Pages: 419～425
  • DOI: DOI:10.1016/j.carbon.2017.04.062
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Enabling valley selective exciton scattering in monolayer WSe2 through upconversion (2017)
  • Author(s): Manca M.、Glazov M. M.、Robert C.、Cadiz F.、Taniguchi T.、Watanabe K.、Courtade E.、Amand T.、Renucci P.、Marie X.、Wang G.、Urbaszek B.
  • Journal Title: Nat. Commun., 8, 14927 (2017), DOI:10.1038/ncomms14927 Volume: 8 Pages: 14927～14927
  • DOI: DOI:10.1038/ncomms14927
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] High mobility dry-transferred CVD bilayer graphene (2017)
  • Author(s): Schmitz Michael、Engels Stephan、Banszerus Luca、Watanabe Kenji、Taniguchi Takashi、Stampfer Christoph、Beschoten Bernd
  • Journal Title: Appl. Phys. Lett., 110, 263110 (2017), DOI:10.1063/1.4990390 Volume: 110 Pages: 263110～263110
  • DOI: DOI:10.1063/1.4990390
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Identifying suitable substrates for high-quality graphene-based heterostructures (2017)
  • Author(s): Banszerus L、Janssen H、Otto M、Epping A、Taniguchi T、Watanabe K、Beschoten B、Neumaier D、Stampfer C
  • Journal Title: 2D Mater. Volume: 4 Pages: 025030～025030
  • DOI: DOI:10.1088/2053-1583/aa5b0f
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] In-Plane Propagation of Light in Transition Metal Dichalcogenide Monolayers: Optical Selection Rules (2017)
  • Author(s): G. Wang, C. Robert, M. Glazov, F. Cadiz, E. Courtade, T. Amand, D. Lagarde, T. Taniguchi, K. Watanabe, B. Urbaszek, X. Marie
  • Journal Title: Phys. Rev. Lett Volume: 119 Pages: 047401
  • DOI: DOI:10.1103/PhysRevLett.119.047401
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Inducing superconducting correlation in quantum Hall edge states (2017)
  • Author(s): G.-H. Lee, K.-F. Huang, D. K. Efetov, D. S. Wei, S. Hart, T. Taniguchi, K. Watanabe, A. Yacoby, P. Kim
  • Journal Title: Nat. Phys. Volume: 13 Pages: 693-698
  • DOI: DOI:10.1038/NPHYS4084
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Mach-Zehnder interferometry using spin- and valley-polarized quantum Hall edge states in graphene (2017)
  • Author(s): Wei Di S.、van der Sar Toeno、Sanchez-Yamagishi Javier D.、Watanabe Kenji、Taniguchi Takashi、Jarillo-Herrero Pablo、Halperin Bertrand I.、Yacoby Amir
  • Journal Title: Sci. Adv. Volume: 3 Pages: 1700600～1700600
  • DOI: DOI:10.1126/sciadv.1700600
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Magnetic resonance spectroscopy of an atomically thin material using a single-spin qubit (2017)
  • Author(s): Lovchinsky I.、Sanchez-Yamagishi J. D.、Urbach E. K.、Choi S.、Fang S.、Andersen T. I.、Watanabe K.、Taniguchi T.、Bylinskii A.、Kaxiras E.、Kim P.、Park H.、Lukin M. D.
  • Journal Title: Science Volume: 355 Pages: 503～507
  • DOI: DOI:10.1126/science.aal2538
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Mechanical properties of atomically thin boron nitride and the role of interlayer interactions (2017)
  • Author(s): Falin Aleksey、Cai Qiran、Santos Elton J.G.、Scullion Declan、Qian Dong、Zhang Rui、Yang Zhi、Huang Shaoming、Watanabe Kenji、Taniguchi Takashi、Barnett Matthew R.、Chen Ying、Ruoff Rodney S.、Li Lu Hua
  • Journal Title: Nat. Commun. Volume: 8 Pages: 15815～15815
  • DOI: DOI:10.1038/ncomms15815
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Realisation of topological zero-energy mode in bilayer graphene in zero magnetic field (2017)
  • Author(s): Lee Janghee、Watanabe Kenji、Taniguchi Takashi、Lee Hu-Jong
  • Journal Title: Sci. Rep. Volume: 7 Pages: 6466
  • DOI: DOI:10.1038/s41598-017-06902-9
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Shot noise detection in hBN-based tunnel junctions (2017)
  • Author(s): Zhou Panpan、Hardy Will J.、Watanabe Kenji、Taniguchi Takashi、Natelson Douglas
  • Journal Title: Appl. Phys. Lett. Volume: 110 Pages: 133106～133106
  • DOI: DOI:10.1063/1.4978693
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Surface transport and quantum Hall effect in ambipolar black phosphorus double quantum wells (2017)
  • Author(s): Tran Son、Yang Jiawei、Gillgren Nathaniel、Espiritu Timothy、Shi Yanmeng、Watanabe Kenji、Taniguchi Takashi、Moon Seongphill、Baek Hongwoo、Smirnov Dmitry、Bockrath Marc、Chen Ruoyu、Lau Chun Ning
  • Journal Title: Sci. Adv. Volume: 3 Pages: 1603179～1603179
  • DOI: DOI:10.1126/sciadv.1603179
  • Peer Reviewed / Int'l Joint Research
• [Presentation] 1. Heterojunctions for atomically thin 2D semiconductors based on two-dimensional transition metal dichalcogenides (2017)
  • Author(s): K.Tsukagoshi
  • Organizer: 7th International Meeting on Information Display (IMID 2017), (Aug. 28-31, Busan, Korea)
  • Int'l Joint Research / Invited
• [Presentation] Self-assembled hetero-structure based on two-dimensional transition metal dichalcogenides (2017)
  • Author(s): K.Tsukagoshi
  • Organizer: 2017 Low Dimensional Science (LDS), (Aug. 28-31, Taichung, Taiwan)
  • Int'l Joint Research / Invited
• [Presentation] Heterojuctions for atomically thin 2D semiconductors based on two-dimensional transition metal dichalcogenides (2017)
  • Author(s): K.Tsukagoshi
  • Organizer: The EMN Meeting on 2D materials 2017, (Aug. 8-12, Lyon, France)
  • Int'l Joint Research / Invited
• [Presentation] Interface engineering for 2D electronics (2017)
  • Author(s): K. Nagashio
  • Organizer: Nippon-Taiwan Workshop, (Feb. 18, 2017, Kwansei Gakuin Univ. Sanda, Hyogo)
  • Int'l Joint Research / Invited
• [Presentation] Gap engineering and reliability study for 2Delectronics (2017)
  • Author(s): K. Nagashio
  • Organizer: 6th Int. Conf. on Semiconductor Technology for ULSI & TFT,(May. 23, 2017, Schloss Hernstein, Hernstein, Austria)
  • Int'l Joint Research / Invited
• [Presentation] Interface engineering for 2D layered semiconductors (2017)
  • Author(s): K. Nagashio
  • Organizer: 2017 PKU-UTokyo nano-carbon summer camp, (July, 27, 2017, Hongo, UTokyo (Tokyo))
  • Int'l Joint Research / Invited
• [Presentation] Interface engineering for 2D electronics (2017)
  • Author(s): K. Nagashio
  • Organizer: 2017 NEA Symposium of Emerging Materials Innovation, (October, 18, 2017, Lotte hotel, Soul, Korea).
  • Int'l Joint Research / Invited
• [Presentation] Understanding of layered heterointerfaces in 2D semiconductors (2017)
  • Author(s): K. Nagashio
  • Organizer: 10th anniversary international symposium on advanced Plasma science (ISPlamsa2018), (March, 5, 2018, Meijyo univ., Nagoya).
  • Int'l Joint Research / Invited
• [Presentation] グラフェンの伝導特性 (2017)
  • Author(s): 長汐晃輔
  • Organizer: 日本化学会第97春季年会「特別企画」二次元物質の科学, (2017年３月16日， 慶応大学, 日吉, (神奈川)).
  • Invited
• [Presentation] 2次元原子膜応用のためのゲートスタック形成 (2017)
  • Author(s): 長汐晃輔
  • Organizer: 2017真空・表面科学合同講演会 (2017年8月17日，横浜市立大，(横浜市))
  • Invited
• [Presentation] 2次元層状チャネルFETの電子輸送特性及び界面特性 (2017)
  • Author(s): 長汐晃輔
  • Organizer: 応用電子物性分科会研究例会 (2017年10月19日，東工大，(東京都目黒区))
  • Invited
• [Presentation] 2次元原子層半導体における層状ヘテロ界面の理解と制御 (2017)
  • Author(s): 長汐晃輔
  • Organizer: 第36回電子材料シンポジウム, (2017年11月9日，長浜ロイヤルホテル，(滋賀県長浜市)).
  • Invited
• [Book] 「グラフェンの伝導特性とエネルギーギャップ形成」, 二次元物質の科学 グラフェンなどの分子シートが生み出す新世界, 61-67,2017，日本化学会編 p61-67. (2017)
  • Author(s): 長汐晃輔
  • Total Pages: 7
  • Publisher: 化学同人
• [Remarks] 東京大学マテリアル工学専攻・長汐研究室
  • URL: http://webpark1753.sakura.ne.jp/nagashio_lab/
• [Remarks] 物質・材料研究機構 塚越グループ
  • URL: http://www.nims.go.jp/pi-ele_g/index.html
• [Remarks] 埼玉大学大学院理工学研究科物質科学部門・理学部基礎化学科 上野研究室
  • URL: http://surface-www.chem.saitama-u.ac.jp/wiki/