Understanding and device application of the hetero-atomic layers

2017 Fiscal Year Final Research Report

• Project Area: Science of Atomic Layer Systems
• Project/Area Number: 25107004
• Research Category: Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: The University of Tokyo
• Principal Investigator: NAGASHIO Kosuke 東京大学, 大学院工学系研究科(工学部), 准教授 (20373441)
• Co-Investigator(Kenkyū-buntansha): 長谷川 雅考 国立研究開発法人産業技術総合研究所, 材料・化学領域, 研究グループ長 (20357776) ; 上野 啓司 埼玉大学, 理工学研究科, 准教授 (40223482) ; 塚越 一仁 国立研究開発法人物質・材料研究機構, その他部局等, その他研究員 (50322665)
• Co-Investigator(Renkei-kenkyūsha): WATANABE Kenji 物質・材料研究機構, 主幹研究員 (20343840) ; YAMADA Takatoshi 産業技術総合研究所, ナノ材料研究部門, 研究員 (30306500)
• Project Period (FY): 2013-06-28 – 2018-03-31
• Keywords: グラフェン / 2次元材料 / 輸送特性

Outline of Final Research Achievements

In the research of atomic layers for Scientific Research on Innovative Areas, (1) the transport properties of 2 dimensional layered semiconductors, (2) fabrication technique for the layered heterostructure, and its transport properties and (3) application to the OLED were studied. Compared with the conventional heteroepitaxy, layered heterostructure can be fabricated without considering the lattice mismatch. The layered heterointerface is proved to be electrically inert. Further development can be expected.

Free Research Field

2 dimensional materials