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1991 Fiscal Year Final Research Report Summary

Research of Localized States in Alloy Semiconductors at low Temperatute Under High Pressures

Research Project

Project/Area Number 01490001
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 広領域
Research InstitutionHokkaido University

Principal Investigator

NAKAHARA Jun'ichiro  Hokkaido University, Science, Associate Professor, 理学部, 助教授 (30013527)

Project Period (FY) 1989 – 1991
KeywordsALLOY SEMICONDUCTORS / SEMIMAGNETIC SEMICONDUCTORS / LOCALIZED STATES / Mn / LATTICE DISTORTION / RELAXATION / InGap / 圧力
Research Abstract

The phonon modes in In_<1-X>Ga_XP were investigated under high pressure by Raman scattering spectroscopy. In In_<1-X>Ga_XP a pressure induced structure was observed between LO and TO modes. The origin of this structure is discussed by means of dielectric analysis, pressure dependence, and composition dependence. We conclude that a part of the high energy side of this additional structure is caused by a disorder-activated zone boundary optical phonon. We have done a systematic investigation of photoluminescence (PL) in Cd_<1-X>Mn_XTe of various x. For the photoluminescence near 2eV of Mn^<2+> internal d-d transition, we determined the phonon energy, Huang-Rhys factor and inhomogeneous broadening. But there is discrepancy between this model and the observations above 80K. The temperature dependences of the half width and Stokes shifts of Mn^<2+> indicate that the lattice distortion of excited Mn^<2+> becomes gradually smaller increasing temperature above 80K and is large at low temperatures. For the photoluminescence near 1.15 eV we determined the phonon energy, Huang-Rhys factor and inhomogeneous broadening similarly as Mn^<2+> internal d-d transition. By the temperature dependence of these PL's intensities, we propased the possibility of large lattice distortion induced by Mn^<2+> internal d-d excitations and the existence of different charged states.

  • Research Products

    (8 results)

All Other

All Publications (8 results)

  • [Publications] J.Nakahara,T.Kato,S.Minomura and T.Ishida: "Raman spectra of InGaP under high pressure" Semiconductor Science and Technology. 6. 496-499 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Nakahara,T.Nouchi,H.Arai,I.Mogi,G.Kido and J.Nakahara: "Magneto Photoluminescence in Cd Mu Te" J.Crystal Growth. (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Nakahara,T.Nouchi and J.Watanabe: "Large Latlice Distortion and Infrared Photoluminescence un Cd Mu Te" Japanese Journal of Applied Physics. (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Watanabe,H.Arai,T.Nouch and J.Nakahara: "Large Lattice Distortion Induced by Mn^<2+> excitation in Cd Mu Te" Journal of Physical Society of Japan. (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J. Nakahara, T. Kato, S. Minomura and T. Ishida: "Raman spectra of In_<1-X>Ga_XP under high pressure" Semicon. Sci. Tech.6. 496-499 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J. Nakahara, T. Nouchi, H. Arai, I. Mogi, G. Kido and J. Watanabe: "Magneto-Photoluminescence in CdMnTe" J. Cry. Growth. (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J. Nakahara, T. Nouchi and J. Watanabe: "Large Lattice Distortion and Infrared Photoluminescence in CdMnTe" Jpn. J. Appl. Phys.(1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J. Watanabe, H. Arai, T. Nouchi and J. Nakahara: "Large Lattice distortion induced by Mn2+ excitation in CdMnTe" J. Phys. Soc. Jpn.(1992)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1993-03-16  

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