1989 Fiscal Year Annual Research Report

界面の作製とその精密制御

Research Project

Project/Area Number	01650002
Research Institution	Nagoya University
Principal Investigator	安田幸夫名古屋大学, 工学部, 教授 (60126951)
Co-Investigator(Kenkyū-buntansha)	前川禎通名古屋大学, 工学部, 教授 (60005973) 白木靖寛東京大学, 先端科学技術研究センター, 助教授 (00206286) 堀池靖浩広島大学, 工学部, 教授 (20209274) 多田邦雄東京大学, 工学部, 教授 (00010710) 小長井誠東京工業大学, 工学部, 助教授 (40111653)
Keywords	金属ー半導体界面 / 接触抵抗 / 不純物ドーピング / 界面反応 / 精密制御技術
Research Abstract	第2班の研究目的は、(1)金属ー半導体界面を原子層単位で精密に作製するための基本的技術を確立すること、(2)低接触抵抗および界面の安定性の見地から、金属ー半導体系を基礎的に研究・開発すること、および(3)高不純物濃度添加技術とその原子層尺度の精密制御技術を開発すること、である。本年度の主な成果を以下に示す。 (1)Siコンタクトに対して、界面反応およびシリサイド形成に関する見地から一連の金属元素を選択し、特にZr/Si系で、接触抵抗10^<-8>Ω-cm^2台の値を得た。また、断面TEMから界面における現象を原子尺度で観察し、固相反応等に新しい現象を見出した。(2)Siに対する超高濃度ドーピングを研究・開発し、リン・ドープn型Siに対して2×10^<21>cm^<-3>という高いキャリア濃度を実現した。(3)単原子層ドービングした不純物の熱拡散過程を調べ、その安定性、拡散機構解明のための基礎データを得た。(4)Al/Si系の限界を検討するため、電子銃によるAl蒸着ガスの縦磁場/多極ECRでAlプラズマを生成し、Alイオン衝撃のアシストで成膜の実験に着手した。また、SiO_2/Siの低損傷加工をめざし、CF_4/H_2を用い、基板冷却効果を研究中である。(5)n^+型GaAs層上にノンアロイ・オーミックコンタクト層として組成傾斜In_xGa_<1-x>As層を分子線エピタキシー法で成長・試作し、ヘテロ接合バイポーラトランジスタ構造キャリア注入型光変調器/スイッチ作製への適用を検討した。(6)GaAsへの超高濃度ドーピングを検討し、カーボンドープp型GaAsに対して、1.6×10^<21>cm^<-3>の高いキャリア濃度を実現し、〜10^<-8>Ωcm^2の接触抵抗率を得た。(7)本年度購入した設備MOCVD反応系によりZnSe薄膜単結晶をGaAs基板上に成長させ、成長条件の適正化を検討している。(8)金属および半導体薄膜における表面及び界面の乱れを取り扱うカノニカル変換理論を構築した。

Research Products

(28 results)

All Other

All Publications (28 results)

[Publications] A.Yamada,Y.Jia,M.Konagai and K.Takahashi: "“Heavily P-Doped Silicon Films Grown by Photochemical Vapor Deposition at a Very Low Tempcrature of 250℃"" Jpn.J.Appl.Phys.28. L2284-L2287 (1989)
[Publications] A.Yamada,Y.Jia,M.Konagai and K.Takahashi: "“Heavily P-Doped epitaxial Si films grown by Photochemical Vapor Deposition"" Electronic Materials Conf.June 21-23 Cambridge,USA 1989. (1989)
[Publications] Y.Jia,A.Konagai,M.Konagai and K.Takahashi: "“Heavily P-Doped epitaxial Si films grown by Photochemical Vapor Deposition"" Symposium on Dry Process Oct.30-31 Tokyo. (1989)
[Publications] A.Yamada,Y.Jia,M.Konagai and K.Takahashi: "“Heavily P-Doped Si and SiGe films grown by Photo-CVD at 250℃"" 119th TMS Annual Meeting Feb.18-22 Anaheim. (1990)
[Publications] T,Akasaka,S.Nozaki,R.Miyake,K.Saito,M.Konagai,T.Yamada: "T.Fukamachi,E.Tokumitsu and K.Takahashi “Metallic p-type GaAs and InGaAs by MOMBE"" 2nd International Conf.on Chemical Beam Epitaxy and Related Growth Techniques Dec.11-13 Houston 1989. (1989)
[Publications] Suguru Onome,Toru Yamada,Masatoshi Sano and Masaharu Aoki: "“Relationship between Surface Treatment of ZnTe Substrates and Morphology of CdSe Epitaxial Layers in Liquid Phase Epitaxy"" Jpn.J.Appl.Phys.28. 1648-1653 (1989)
[Publications] Y.Okada,R.H.Yan,L.A.Coldren J.L.Merz and K.Tada: "“The Effect of Bandtails on the Design of GaAs/AlGaAs Bipolar Transistor Carrier-Injected Optical Modulator/Switch"" IEEE Journal of Quantum Electronics QE-25. 4. 713-719 (1989)
[Publications] Y.Okada,T.Ishikawa and K.Tada: "“Optical intensity modulator for integrated optics by use of heterojunction bipolar transistor waveguide structure"" Applied Physics letters. 55,25. 2591-2593 (1989)
[Publications] Y.Okada,T.Ishikawa,Y.Nakano and K.Tada: "“GaAs/AlGaAs Double-Graded Heterojunction Bipolar Transistor Prepared by MBE with Precise Tempreture control Using Modern Control Theory"" Technical Digest of the 1st International Meeting on Advanced Processing and Characterization Technologies (APCT'89)Tokyo,Oct.191-194 (1989)
[Publications] Y.Okada,R.J.Simas,L.A.Coldern,J.L.Merz and K.Tada: "“GaAs/AlGaAs Double-Heterojunction Bipolar Transistor Carrier-Injected Optical Intensity Modulator"" Extended Abstracts of 21st Conference on Solid State Devices and Materials(ssdm89)Tokyo Aug.449-452 (1989)
[Publications] Y.Okada and K.Tada: "“GaAs/AlGaAs Reflection-Type Optical Using Bipolar Transistor Waveguide Structure"" 1990 International Topical Meeting on Photonic Switching(PS'90)13C-19 Kobe,April. (1990)
[Publications] Y.Saito and T.Noda: "“Cluster Cations Ejected from Liquid Metal Ion Source :Alkali metals(Li,Na)and Group IV Elements(Si,Ge,Sn,Pb)"" Z.Phys.D.12. 127-129 (1989)
[Publications] Y.Saito,I.Katakuse and H.Ito: "“Aluminium Cluster Ions and Aluminium-Xenon Conplex Ions Formed by Ion Sputtering"" Chem.Phys.Lett.161(4/5)PP.332-338. 161. 332-338 (1989)
[Publications] Y.Saito: "“Emission Spectra of Cu_2,Ag_2 and Au_2 in Gas Evaporation"" Jpn.J.Appl.Phys.28(11). 28. L2024-L2026 (1989)
[Publications] J.Ione,M.Miyazaki and S.Maekawa: "“Density of State of a Hole in the Half-Filled Hubbard Model"" Physica C,157. 157. 209-214 (1989)
[Publications] T.Toyama,Y.Ohta and S.Maekawa: "“Cluster Analyses of Electronic States in Electron-Doped Coppy Oxide Superconductors"" Physica C,158. 158. 525-530 (1989)
[Publications] A.Oguri and S.Maekawa: "“Thermopower and Resistivity in Strongly Correlated Electron Systems"" Physica C. 162-164. 679-689 (1989)
[Publications] H.Okabayashi and K.Nikawa: "“Mass Transport Induced Problems in Aluminum Metallization:A Review"" ULSI Science and Technology 1989(The Electrochem.Soc.Inc New Jersey). 515-529 (1989)
[Publications] T.Shinzawa,S.Kishida and H.Okabayashi: "“Selective Al CVD Using Dimethyl Aluminum Hydride"" Abstr.of Workshop on Tungsten and Other CVD Metals for ULSI/VLSI Applications VI,Part-2:Japan Workshop.Oct.55-57 (1989)
[Publications] S.Ogawa,T.Yoshida and T.Kouzaki: "“Dependence of thermal stability of titanium silicide/silicon structure on impurities"" Appl.Phys.Lett.56. (1990)
[Publications] T.Yoshida,S.Ogawa,S.Okuda Y.Kouzaki,and K.Tsukamoto: "“Thermally stable,low leakage self-aligned titanium silicide Junctions"" J.Electrochem.Soc.
[Publications] S.Ogawa,T.Yoshida,T.Kouzaki and R.Shinclair: "“Structure and electrical properties of the Ti-Si interface"" Meterials Research Society symposia proceedings;Advanced Metallizationsin Microelectronics). (1990)
[Publications] K.Nakagawa,M.Miyao and Y.Shiraki: "“Influence of Substrate Orientation on Surface Segregation Process in Silicon-MBE"" Thin Solid Films. 183. 315-322 (1989)
[Publications] T.Oshima,N.Nakamura,K.Nakagawa and M.Miyao: "“Low Temperature Formation of Si/Silicide/Si Double Heterostructures by Self-Aligned MBE Growth"" Thin Solid Films. 184. 275-282 (1989)
[Publications] K.Nakagawa,A.A.van Gorkum and Y.Shiraki: "“Atomic Layer Doped Field-Effect Transistor Fabricated Using Si Molecular Beam Epitaxy"" Appl.Phys.Lett.54. 1869-1871 (1989)
[Publications] A.A.van Gorkum,K.Nakagawa and Y.Shiraki: "“Atomic Laer Doping(ALD)Technology in Si and Its Application to A New Structure FET"" J.Cryst.Growth. 95. 48-483 (1989)
[Publications] T.Oshima,K.Nakagawa,N.Nakamura and Y.Shiraki: "“Self-Aligned NiSi_2 Electrode Fabrication by MBE and Its Application to Etched-Groove Permeale Base Transistor(PBT)"" J.Cryst.Growth. 95. 490-493 (1989)
[Publications] A.A.van Gorkum,K.Nakagawa and Y.Shiraki: "“Growth and Characterization of Atomi Layer Doping Structure inSi"" J.Appl.Phys.65. 2485-2492 (1989)

1989 Fiscal Year Annual Research Report

界面の作製とその精密制御

Principal Investigator

安田 幸夫 名古屋大学, 工学部, 教授 (60126951)

Research Products

[Publications] A.Yamada,Y.Jia,M.Konagai and K.Takahashi: "“Heavily P-Doped Silicon Films Grown by Photochemical Vapor Deposition at a Very Low Tempcrature of 250℃"" Jpn.J.Appl.Phys.28. L2284-L2287 (1989)

[Publications] A.Yamada,Y.Jia,M.Konagai and K.Takahashi: "“Heavily P-Doped epitaxial Si films grown by Photochemical Vapor Deposition"" Electronic Materials Conf.June 21-23 Cambridge,USA 1989. (1989)

[Publications] Y.Jia,A.Konagai,M.Konagai and K.Takahashi: "“Heavily P-Doped epitaxial Si films grown by Photochemical Vapor Deposition"" Symposium on Dry Process Oct.30-31 Tokyo. (1989)

[Publications] A.Yamada,Y.Jia,M.Konagai and K.Takahashi: "“Heavily P-Doped Si and SiGe films grown by Photo-CVD at 250℃"" 119th TMS Annual Meeting Feb.18-22 Anaheim. (1990)

[Publications] T,Akasaka,S.Nozaki,R.Miyake,K.Saito,M.Konagai,T.Yamada: "T.Fukamachi,E.Tokumitsu and K.Takahashi “Metallic p-type GaAs and InGaAs by MOMBE"" 2nd International Conf.on Chemical Beam Epitaxy and Related Growth Techniques Dec.11-13 Houston 1989. (1989)

[Publications] Suguru Onome,Toru Yamada,Masatoshi Sano and Masaharu Aoki: "“Relationship between Surface Treatment of ZnTe Substrates and Morphology of CdSe Epitaxial Layers in Liquid Phase Epitaxy"" Jpn.J.Appl.Phys.28. 1648-1653 (1989)

[Publications] Y.Okada,R.H.Yan,L.A.Coldren J.L.Merz and K.Tada: "“The Effect of Bandtails on the Design of GaAs/AlGaAs Bipolar Transistor Carrier-Injected Optical Modulator/Switch"" IEEE Journal of Quantum Electronics QE-25. 4. 713-719 (1989)

[Publications] Y.Okada,T.Ishikawa and K.Tada: "“Optical intensity modulator for integrated optics by use of heterojunction bipolar transistor waveguide structure"" Applied Physics letters. 55,25. 2591-2593 (1989)

[Publications] Y.Okada,R.J.Simas,L.A.Coldern,J.L.Merz and K.Tada: "“GaAs/AlGaAs Double-Heterojunction Bipolar Transistor Carrier-Injected Optical Intensity Modulator"" Extended Abstracts of 21st Conference on Solid State Devices and Materials(ssdm89)Tokyo Aug.449-452 (1989)

[Publications] Y.Okada and K.Tada: "“GaAs/AlGaAs Reflection-Type Optical Using Bipolar Transistor Waveguide Structure"" 1990 International Topical Meeting on Photonic Switching(PS'90)13C-19 Kobe,April. (1990)

[Publications] Y.Saito and T.Noda: "“Cluster Cations Ejected from Liquid Metal Ion Source :Alkali metals(Li,Na)and Group IV Elements(Si,Ge,Sn,Pb)"" Z.Phys.D.12. 127-129 (1989)

[Publications] Y.Saito,I.Katakuse and H.Ito: "“Aluminium Cluster Ions and Aluminium-Xenon Conplex Ions Formed by Ion Sputtering"" Chem.Phys.Lett.161(4/5)PP.332-338. 161. 332-338 (1989)

[Publications] Y.Saito: "“Emission Spectra of Cu_2,Ag_2 and Au_2 in Gas Evaporation"" Jpn.J.Appl.Phys.28(11). 28. L2024-L2026 (1989)

[Publications] J.Ione,M.Miyazaki and S.Maekawa: "“Density of State of a Hole in the Half-Filled Hubbard Model"" Physica C,157. 157. 209-214 (1989)

[Publications] T.Toyama,Y.Ohta and S.Maekawa: "“Cluster Analyses of Electronic States in Electron-Doped Coppy Oxide Superconductors"" Physica C,158. 158. 525-530 (1989)

[Publications] A.Oguri and S.Maekawa: "“Thermopower and Resistivity in Strongly Correlated Electron Systems"" Physica C. 162-164. 679-689 (1989)

[Publications] H.Okabayashi and K.Nikawa: "“Mass Transport Induced Problems in Aluminum Metallization:A Review"" ULSI Science and Technology 1989(The Electrochem.Soc.Inc New Jersey). 515-529 (1989)

[Publications] T.Shinzawa,S.Kishida and H.Okabayashi: "“Selective Al CVD Using Dimethyl Aluminum Hydride"" Abstr.of Workshop on Tungsten and Other CVD Metals for ULSI/VLSI Applications VI,Part-2:Japan Workshop.Oct.55-57 (1989)

[Publications] S.Ogawa,T.Yoshida and T.Kouzaki: "“Dependence of thermal stability of titanium silicide/silicon structure on impurities"" Appl.Phys.Lett.56. (1990)

[Publications] T.Yoshida,S.Ogawa,S.Okuda Y.Kouzaki,and K.Tsukamoto: "“Thermally stable,low leakage self-aligned titanium silicide Junctions"" J.Electrochem.Soc.

[Publications] S.Ogawa,T.Yoshida,T.Kouzaki and R.Shinclair: "“Structure and electrical properties of the Ti-Si interface"" Meterials Research Society symposia proceedings;Advanced Metallizationsin Microelectronics). (1990)

[Publications] K.Nakagawa,M.Miyao and Y.Shiraki: "“Influence of Substrate Orientation on Surface Segregation Process in Silicon-MBE"" Thin Solid Films. 183. 315-322 (1989)

[Publications] T.Oshima,N.Nakamura,K.Nakagawa and M.Miyao: "“Low Temperature Formation of Si/Silicide/Si Double Heterostructures by Self-Aligned MBE Growth"" Thin Solid Films. 184. 275-282 (1989)

[Publications] K.Nakagawa,A.A.van Gorkum and Y.Shiraki: "“Atomic Layer Doped Field-Effect Transistor Fabricated Using Si Molecular Beam Epitaxy"" Appl.Phys.Lett.54. 1869-1871 (1989)

[Publications] A.A.van Gorkum,K.Nakagawa and Y.Shiraki: "“Atomic Laer Doping(ALD)Technology in Si and Its Application to A New Structure FET"" J.Cryst.Growth. 95. 48-483 (1989)

[Publications] T.Oshima,K.Nakagawa,N.Nakamura and Y.Shiraki: "“Self-Aligned NiSi_2 Electrode Fabrication by MBE and Its Application to Etched-Groove Permeale Base Transistor(PBT)"" J.Cryst.Growth. 95. 490-493 (1989)

[Publications] A.A.van Gorkum,K.Nakagawa and Y.Shiraki: "“Growth and Characterization of Atomi Layer Doping Structure inSi"" J.Appl.Phys.65. 2485-2492 (1989)

安田幸夫名古屋大学, 工学部, 教授 (60126951)