1990 Fiscal Year Annual Research Report

高性能太陽光発電素子の設計と製作

Research Project

Project/Area Number	02203109
Research Institution	Nagoya Institute of Technology
Principal Investigator	梅野正義名古屋工業大学, 工学部, 教授 (90023077)
Co-Investigator(Kenkyū-buntansha)	藤嶋昭東京大学, 工学部, 教授 (30078307) 坪村宏大阪大学, 基礎工学部, 教授 (20029367) 垂井康夫東京農工大学, 工学部, 教授 (10143629) 佐々木昭夫京都大学, 工学部, 教授 (10025900) 小長井誠東京工業大学, 工学部, 助教授 (40111653)
Keywords	Si基板上GaAs結晶 / タンデム型太陽電池 / CuInSe_2薄膜太陽電池 / InAIAs / InGaAs太陽電池 / アモルファス太陽電池 / 湿式太陽電池 / 水銀増感光CVD / 強誘電性有機薄膜
Research Abstract	1.Si基板上に歪超格子と熱サイクルアニ-ルを用いて10^6cm^<-2>の低転位密度のGaAsを成長する方法を明らかにした。拡敬によって作製したSi太陽電池の上にGaAs太陽電池を形成することにより、GaAs/Si2端子タンデム型太陽電池を作製し、11%の変換効率を得た。 2.CuInSe_2薄膜太陽電池を作製するためのCuInSe_2薄膜形成技術の開発を行ない。ラマン散乱により、Cu/In/SeからCuInSe_2が合成される前にCuSe_2などの相が形成される様子が明らかになった。CaS/CuInSe_2薄膜太陽電池を作製し、4%の効率を得た。 3.長波長用InAlAs/InGaAlAs及びInAlAs/InGaAs構造の太陽電池の層構造、不純物密度の最適設計を行った。これらの構造の太陽電池を作製し、前者の効率はモデル計算より少なかったが、後者は3.9%の効率が得られ、理論値に近い値であった。 4.アルモファス太陽電池の特性を向上させるためにランブ-体化装置を用い、aーSi:Hを作製し、光励起効果を調べた。放電ガスとして水素ーヘリウム混合により高速堆積が可能となった。なた、水銀増感光CVD法でaーSiCHを作製し、水素希釈率を高めることにより膜質か向上した。 5.シルコンの表面に超微細金属アイランドを施した新型太陽電池の特性を改善するために金属アイランドの大きさ、密度、均一性を精密に制御する方法を検討し、湿式太陽電池で14.9%という高い効率を得た。 6.水銀増感光CVD法における膜表面反応に及ぼす光の効果を明らかにした。 7.(VPF/TrFE)共重合体の強誘電性有機薄膜の通常の金属、半導体結合やPn接合とは異なる異常光起電力効果の発現機構を明らかにした。

Research Products
(18 results)

All Other

All Publications (18 results)

[Publications] T.Soga: "Low etch pit density GaAs on Si grown by metalorganic chemical vapor deposition" Appl.Phys.Lett,. 56. 1433-1435 (1990)
[Publications] T.Soga: "Low dislocation density GaAs on Si for solar cell application" Tech.Dig.Int.PVSECー5. 119-122 (1990)
[Publications] F.Gai: "Grwth of GaAs on p^+nーSi and n^+pーSi substrates by MOCVD for GaAs/Si monolithic tandem solar cells" Tech.Dig.Int.PVSECー5. 123-126 (1990)
[Publications] D.Imanishi: "GaAsーSi monolithic 2 terminal tandem structure solar cell grown by MOCVD" Tech.Dig.Int.PVSECー5. 1028-1028 (1990)
[Publications] M.Tanda: "Preparation of CuInSe_2 films by encapsulated selenization and its characterization by Raman scattering spectroscopy" Tech.Dig.Int PVSECー5. 279-282 (1990)
[Publications] K.Higuchi: "Characterization of ーdoped aーSiC pーlayer prepared by trimethylboron and triethylboron and its application to solar cells" Tech.Dig.Int.PVSECー5. 529-532 (1990)
[Publications] S.Yamanaka: "Raman scattering study of CuInSe_2films pre pared by threeーsource rfーsputtering and by selenization of Cu/In/Se stacked layer" Proc.of 21st IEEE Photovoltaic Specialists Conf.758-763 (1990)
[Publications] T.Ikeoku: "InAlAs/InGaAs photovoltaic cells for 1μm wavelength range" Tech.Dig.Int.PVSECー5. 439-442 (1990)
[Publications] Y.Tarui: "Doping properties of microcrystalline silicon prapared by mercury sensitized photochemical vapor deposition" Appl.Phys.A50. 227-229 (1990)
[Publications] H.Tsubomura: "High photovoltages arising from nーsilicon/methanol junctions studied by the temperature dependence of open circuit photovoltage" J.Electroanal.Chem.287. 239-245 (1990)
[Publications] Y.Nakato: "Solar cells based on a new junction“transparent conductor/Thin insulator having ultrafine metal islands/semiconductor"" Tech.Dig Int.PVSECー5. 939-942 (1990)
[Publications] H.kobayashi: "Mechanism of carrier transport in highly efficient solar cells having indium tin oxide/Si junctions" J.Applied Physics. 69. 1736-1743 (1991)
[Publications] A.Fujishima: "Excellent reversible photo chromic behavior 4ーoctylー4ーazobenzen in organized monolayer assemlies" Chem.Lett.1023-1024 (1990)
[Publications] A.Fujushima: "Electrochemical behavior of high transition temperature supercconducting oxides" Bull.Chem.Soc.Jpn.63. 1267-1273 (1990)
[Publications] Z.F.Liu: "Photoelectrochemical information storage using an azobenzene derivature" Nature. 347. 658-660 (1990)
[Publications] K.Kato: "Improvement of photoーelecric conversion efficiency in ferroelectric Polymers by the combination of charge injection layer" Rept.Prog.Polym.Phys.Jpn.33. 447-450 (1990)
[Publications] K.Matsushige: "anomalous photovoltaic effect in ferroelectric polymers" Proc.7th.Int.Symp.on Application of Ferroelectrics. (1990)
[Publications] K.Matsushige: "Formation of organic ferroelectric thin films by vacuum evaporation under electric fied" Proc.7th.Int.Symp.on Application of Ferroelectrics. (1990)

1990 Fiscal Year Annual Research Report

高性能太陽光発電素子の設計と製作

Principal Investigator

梅野 正義 名古屋工業大学, 工学部, 教授 (90023077)

Research Products

[Publications] T.Soga: "Low etch pit density GaAs on Si grown by metalorganic chemical vapor deposition" Appl.Phys.Lett,. 56. 1433-1435 (1990)

[Publications] T.Soga: "Low dislocation density GaAs on Si for solar cell application" Tech.Dig.Int.PVSECー5. 119-122 (1990)

[Publications] F.Gai: "Grwth of GaAs on p^+nーSi and n^+pーSi substrates by MOCVD for GaAs/Si monolithic tandem solar cells" Tech.Dig.Int.PVSECー5. 123-126 (1990)

[Publications] D.Imanishi: "GaAsーSi monolithic 2 terminal tandem structure solar cell grown by MOCVD" Tech.Dig.Int.PVSECー5. 1028-1028 (1990)

[Publications] M.Tanda: "Preparation of CuInSe_2 films by encapsulated selenization and its characterization by Raman scattering spectroscopy" Tech.Dig.Int PVSECー5. 279-282 (1990)

[Publications] K.Higuchi: "Characterization of ーdoped aーSiC pーlayer prepared by trimethylboron and triethylboron and its application to solar cells" Tech.Dig.Int.PVSECー5. 529-532 (1990)

[Publications] S.Yamanaka: "Raman scattering study of CuInSe_2films pre pared by threeーsource rfーsputtering and by selenization of Cu/In/Se stacked layer" Proc.of 21st IEEE Photovoltaic Specialists Conf.758-763 (1990)

[Publications] T.Ikeoku: "InAlAs/InGaAs photovoltaic cells for 1μm wavelength range" Tech.Dig.Int.PVSECー5. 439-442 (1990)

[Publications] Y.Tarui: "Doping properties of microcrystalline silicon prapared by mercury sensitized photochemical vapor deposition" Appl.Phys.A50. 227-229 (1990)

[Publications] H.Tsubomura: "High photovoltages arising from nーsilicon/methanol junctions studied by the temperature dependence of open circuit photovoltage" J.Electroanal.Chem.287. 239-245 (1990)

[Publications] Y.Nakato: "Solar cells based on a new junction“transparent conductor/Thin insulator having ultrafine metal islands/semiconductor"" Tech.Dig Int.PVSECー5. 939-942 (1990)

[Publications] H.kobayashi: "Mechanism of carrier transport in highly efficient solar cells having indium tin oxide/Si junctions" J.Applied Physics. 69. 1736-1743 (1991)

[Publications] A.Fujishima: "Excellent reversible photo chromic behavior 4ーoctylー4ーazobenzen in organized monolayer assemlies" Chem.Lett.1023-1024 (1990)

[Publications] A.Fujushima: "Electrochemical behavior of high transition temperature supercconducting oxides" Bull.Chem.Soc.Jpn.63. 1267-1273 (1990)

[Publications] Z.F.Liu: "Photoelectrochemical information storage using an azobenzene derivature" Nature. 347. 658-660 (1990)

[Publications] K.Kato: "Improvement of photoーelecric conversion efficiency in ferroelectric Polymers by the combination of charge injection layer" Rept.Prog.Polym.Phys.Jpn.33. 447-450 (1990)

[Publications] K.Matsushige: "anomalous photovoltaic effect in ferroelectric polymers" Proc.7th.Int.Symp.on Application of Ferroelectrics. (1990)

[Publications] K.Matsushige: "Formation of organic ferroelectric thin films by vacuum evaporation under electric fied" Proc.7th.Int.Symp.on Application of Ferroelectrics. (1990)

梅野正義名古屋工業大学, 工学部, 教授 (90023077)