新機能光デバイスのための化合物半導体の物性制御の研究

1990 Fiscal Year Annual Research Report

• Project/Area Number: 02204003
• Research Institution: Chiba University
• Principal Investigator: 吉川 明彦 千葉大学, 工学部, 教授 (20016603)
• Co-Investigator(Kenkyū-buntansha): 荒井 滋久 東京工業大学, 工学部, 助教授 (30151137) ; 小林 洋志 鳥取大学, 工学部, 教授 (40029450) ; 吉田 博 東北大学, 理学部, 助手 (30133929)
• Keywords: ワイドギャップIIーVI族化合物半導体 / 青色発光素子 / 電子状態計算 / 物質設計 / エレクトロルミネッセンス / (IIaーVIb) / (IIbーVIb)超格子薄膜 / 半導体光スイッチ / 量子細線

Research Abstract

化合物半導体の新機能制の発現のための物質設計,物性制御に関して以下のような研究成果が得られた。
1.p型ZnSeアクセプタ準位の候補としてLi不純物を選び,新たに開発したDSA法人によりZn置換位置周辺でのLiの移動エネルギ-と構造安定性を計算した.その結果Liのアクセプタとしての不安定性の起源が置換位置から格子間位置への移動とイオン化による自己補償であることを解明した.(吉田)
2.ZnSeの物性制御に於いて基板との格子不整の影響を検討した結果,GaAs上に成長したn型ZnSe膜には圧縮応力が働き,この応力を緩和するために界面付近に深い欠陥準位が導入され,それに伴い高抵抗層が存在することを明らかにした.また,NH_3を用いた窒素添加ZnSeに於いてAu電極の熱処理の最適化により正孔濃度が2x10^<16>cm^<ー3>程度のp型伝導膜であることを確認した.さらに,GaAsに整合したZnSSe混晶膜の成長を行い窒素添加を試みたが,ZnSeに比べて窒素は取り込まれにくい事が分かった.(吉川)
3.SrS/ZnS超格子薄膜の成長を行うために,ホットウォ-ル蒸着型のALE装置の作製を進め,薄膜成長の予備実験を行った.その一方で,基礎となる知見を得るため,電子線蒸着法で作製したSrS薄膜の評価を行った.SrS薄膜は成長温度500℃以上のとき比較的良質の多結晶薄膜になる.また,成長中に容易に酸素原子を取り込み,酸素汚染される.500℃程度の温度で熱処理を行うと,膜質が改善されることが分かった.(小林)
4.量子細線・量子箱構造を用いる交差型光スイッチの理論解析を行い,低損失化および高消光比化のためには,量子細線や量子箱が優れていることを明らかにすると共に,幅25ー35nm,井戸層厚8nmのGaInAs/InP3層多重量子細線構造を世界で初めて試作し,その電界屈折率変化スペクトルを測定した.(荒井)

Research Products

• [Publications] A.Yoshikawa: "Ar Ion LaserーAssisted MOVPE of ZnSe Using DMZn and DMSe as Reactants" Japanese Journal of Applied Physics. 29(2). L225-L227 (1990)
• [Publications] S.Yamaga: "Growth and Properties of ZnCdS Films on GaAs by LowーPressure MOVPE" Journal of Crystal Growth. 99. 432-436 (1990)
• [Publications] H.Oniyama: "Growth of LatticeーMatched ZnSeーZnS StrainedーLayer Superlattice onto GaAs as an Alternative to ZnSSe Alloys" MRS Proceedings on Properties of IIーVI Semiconductors. 161. 187-191 (1990)
• [Publications] A.Yoshikawa: "Ar Ion LaserーAssisted Metalorganic Vapor Phase Epitaxy of ZnSe" SPIE Proceedings on Laser/Optical Processing of Electronic Materials. 1190. 25-34 (1990)
• [Publications] A.Yoshikawa: "Use of Dimethyl Hydrazine as a New Acceptor Dopant Source in Metalorganic Vapor Phase Epitaxy of ZnSe" Journal of Crystal Growth. 101. 305-310 (1990)
• [Publications] A.Yoshikawa: "“MBEーlike" and “CVDーlike" Atomic Layer Epitaxy of ZnSe in MOMBE System" Journal of Crystal Growth. 101. 86-90 (1990)
• [Publications] S.Yamaga: "Growth and Properties of IodineーDoped Zns Films Grown by LowーPressure MOCVD Usinf Ethyliodide as a Dopant Source" Journal of Crystal Growth. 106. 683-689 (1990)
• [Publications] A.Yoshikawa: "Effects of Ar Ion Laser Irradiation on MOVPE of ZnSe Using DMZn and DMSe as Reactants" Journal of Crystal Growth. 107. 653-658 (1991)
• [Publications] T.Okamoto: "Effects of Substrate Materials and Their Properties on Photoassisted Metalorganic Vapor Phase Epitaxy of ZnSe" Japanese Journal of Applied Physics. 30(2A). L156-L159 (1991)
• [Publications] S.Yamaga: "Epitaxial ZnS MπS Blue Light Emitting Diode Fabricated on nーGaAs by LowーPressure Metalorganic Vapor Phase Epitaxy" Japanese Journal of Applied Physics. 30(3). 104-108 (1991)
• [Publications] A.Yoshikawa: "Effects of Substrate Materials on Ar Ion LaserーAssisted MOVPE of ZnSe Using DMZn and DMSe as Reactants" Proceedings of MRS.
• [Publications] A.Yoshikawa: "Ar Ion Laser Irradiation Effects on the MOVPE Growth of ZnSe Using Dimethyl Zinc and Hydrogen Selenide as Reactants" Journal of Crystal Growth.
• [Publications] T.Sasaki: "Mechanism of Hydrogen Passivation in Silicon" Proceedings of the 3rd International Conference on Sallow Impurities. 395-404 (1990)
• [Publications] T.Sasaki: "Atomic Configuration and Electric Structure of Anormalous Muonium in Silicon" Proceedings of the 19th International Conference on Physics of Semiconductors. 1003-1006 (1990)
• [Publications] T.Sasaki: "Electronic Structure of Hydrogen and Sallow Acceptor Complexes in Silicon" Proceedings of the 15th International Conference on Defect in Semiconductors. 973-978 (1990)
• [Publications] T.Oguchi: "Electronic Structure of Liーimpurities in ZnSe" MRS Proceedings of Defects and Diffusion in Semiconductors. 163. 81-84 (1990)
• [Publications] 岡部 豊: "計算物理で何をめざすか?" 固体物理. 25(1). 13-21 (1990)
• [Publications] H.KatayamaーYoshida: "Hyperfine and Superhyperfine Interaction Parameters of Interstitial 3rd Transition Atom Impurities in Semiconductors" Proceeding of International Workshop on Hyperfine Interaction of Defects in Semiconductors.
• [Publications] T.Sasaki: "Electronic Structure and Stability of an Impurity Atom of Li in ZnSe" Proceedings of 20th International Conference on the Physics of Semiconductors.
• [Publications] C.Kaneta: "Atomic Configuration and its Stability of CarbonーOxygen Complex in Silicon" Proceedings of 20 th International Conference on the Physics of Semiconductors.
• [Publications] T.Sasaki: "Electronic Structure Calculation for Materials Design" Proceedings of International Conference on Computer Application to Materials Science and Engineering.
• [Publications] S.Tanaka: "Stable White SrS:Ce,K,Eu Thin Film EL with Filters for FullーColor Devices" Proceedings of SID. 31(1). 25-30 (1990)
• [Publications] S.Tanaka: "Thin Film Electroluminescencent Devices using CaS and SrS" Journal of Crystal Growth. 101. 958-966 (1990)
• [Publications] H.Kobayashi: "Color Electroluminescencent Phosphors Based on RareーEarth Doped AlkalineーEarth Sulfides" Acta Polytechnice Scandinavica. 69-76 (1990)
• [Publications] S.Tanaka: "Annealing Effect on Electroluminescence Characteistics of SrS Thin Film Devices Prepared by Electron Beam Evaporation" Acta Polytechnica Scadinavica. 170. 211-214 (1990)
• [Publications] K.Shimomura: "Analysis of Semiconductor Intersectional Optical Switch/Modulators" IEEE Journal of Quantum Electronics. 26. 883-892 (1990)
• [Publications] T.Kikugawa: "Observation of Field Induced Refractive Index Variation in GaInAs/InP Quantum Wire (QW) Structure" Electronics Letters. 26. 1012-1013 (1990)
• [Publications] K.G.Ravikumar: "Lowーdamage GaInAs(P)/InP Nanometer Structure by LowーPressure ECRーRIBE" Japanese Journal of Applied Physics. 29. L1744-L1746 (1990)
• [Publications] K.Shimomura: "Semiconductor Intersectional Optical Switch using Positive Index Variation" Transaction of IEICE.
• [Publications] K.G.Ravikumar: "Field Induced Refractive Index Variation Spectrum in GaInAs/InP Quantum Wire Structure" Applied Physics Letters.
• [Publications] M.Kohtoku: "Switching Operation in GaInAs/InP MQW IntegratedーTwinーGuide (ITG) Optical Switch" IEEE Photon.Tech.Letters.
• [Publications] Y.Miyake: "Room Temperature Operation of GaInAs/GaInAsP/InP SCH MultiーQuantumーFilm Laser with Narrow Wireーlike Active Region" IEEE Photon.Tech.Letters.
• [Publications] 吉川 明彦: "先端電子材料事典 (斎藤省吾 編)“光エレクトロニクス材料"" (株)シ-エムシ-, (1990)
• [Publications] A.Yoshikawa: "WIDEGAP IIーVI COMPOUNDS FOR OPTOーELECTRONIC APPLICATIONS “MOMBE Growth and Properties of WidegaP IIーVI Compounds"" Chapman and Hall Ltd.,
• [Publications] T.Sasaki: "Defect Control in Semiconductors “Instability and Migration of an Impurity Atom of Li in ZnSe"" Elsevier Science Publishers B.V., 4 (1990)
• [Publications] 吉田 博: "コンピュ-タによるシリコンテクノロジ“深い不純物準位の電子状態の計算と物質設計"" 海文堂, 37 (1990)