1990 Fiscal Year Annual Research Report

金属ー半導体積層界面の基礎

Research Project

Project/Area Number	02232103
Research Institution	Osaka University
Principal Investigator	平木昭夫大阪大学, 工学部, 教授 (50029013)
Co-Investigator(Kenkyū-buntansha)	中島尚男大阪大学, 産業科学研究所, 教授 (20198071) 白藤純嗣大阪大学, 工学部, 教授 (70029065) 寺倉清之東京大学, 物性研究所, 教授 (40028212) 金原粲東京大学, 工学部, 教授 (90010719) 長谷川英機北海道大学, 工学部, 教授 (60001781)
Keywords	金属ー半導体界面 / 積層構造 / 界面反応 / ショットキ-障壁 / シリコン / 化合物半導体
Research Abstract	準ミクロおよび原子オ-ダ-サイズでの、金属ー半導体界面現象を正確・精密に把握するために、実験と理論とを複合的・相補的に結合し研究を遂行することにより、以下のような成果を得た。(1)結晶シリコンと種々の金属との反応過程を詳細にわたり調べるため、高速イオン散乱/チャネリング法、種々の電子分光法、電子顕微鏡法・回折法や赤外分光法を駆使することにより、結晶原子位置や電子状態の変化や原子拡散等の精密な測定を行なった結果、金属の蒸着法により界面の安定性が異なることが判明した。また、準整合界面に対する詳細な構造の知見を得た。一方、高速イオン散乱法において、より重い元素を使用することによって、より高分解能の3次元的非破壊分析が可能性となることを明らかにしたり、準ミクロ的にLaB_6ーシリコン界面の評価も行なった。(2)理論グル-プは、第一原理分子動力学法に基づいた、金属ーシリコン界面の電子状態を計算したり、界面の構造安定性を検討するための計算機プログラムの開発を行ない、シリコン上のアルカリ金属の振舞いに対し適用した。また所密度汎関数法に基づいた計算により、トンネル顕微鏡像の理論的検討も行った。(3)主としてMBE法を用い、GaAs,InGaAsやInP等の化合物半導体と金属との界面反応過程を(1)と同様に種々な方法で解析・評価し、安定な界面形成に関する知見を得た。また、種々のショットキ-障壁を作製し、その形成機構や物性を、新たに開発した表面電流測定装置を用いて調べた。また、水素やフォスフィンのプラズマ処理による化合物半導体の表面改質の効果とショットキ-障壁との関連も明かにした。(4)走査トンネル電子顕微鏡法により、清浄半導体表面の解析・評価を行ない、界面評価への応用を目指した基礎研究を行なった。また、トンネル分光法により、酸化物超伝導体ー接合電極系を評価し、電子状態に関する知見を得た。

Research Products

(38 results)

All Other

All Publications (38 results)

[Publications] T.Ito: "“Structural Change of Crystalline Porous Silicon with Chemisorption"" Jpn.J.Appl.Phys.29ー2. L201-L204 (1990)
[Publications] Y.Mori: "“Properties of CVD Diamond/Metal Interfaces"" Mat.Res.Soc.Symp.Proc.162. 353-358 (1990)
[Publications] T.Ito: "“Homoepitaxial Growth of Sillicon on Anodized Porous Silicon"" Appl.Surf.Sci.44. 96-102 (1990)
[Publications] A.Yamama: "“Silicidation of Patterned Narrow Area of Porous silicon"" Vacuum. 41. 1254-1257 (1990)
[Publications] Y.Mori: "“Properties of Metal/Diamond Interface and Effects if Oxygen Adsorbed onto Diamond Surface"" Appl.Phys..Lett.,. 58. 940-941 (1991)
[Publications] 神谷栄二: "「埋もれたシリコン界面の高速イオン散乱法による評価」" 電子情報通信学会技術研究報告. 90ー349. 65-69 (1990)
[Publications] T.Ito: "“Role of Hydrogen Atoms in Anodized porous Silicon"" Physica B. 170. (1991)
[Publications] T.Yasusmatsu: "“Ultrathin Si Film Grown Epitaxially on Porous Silicon"" Appl.Surf.Sci.(1991)
[Publications] J.Moon: "“Possibility of Chemical Information Detection at MetalーSilicon Interfaces Using High Energy Ion Scattering"" Appl.Sur.Sci.(1991)
[Publications] J.Moon: "“Formation of Tin by Nitridation of Magnetron Sputtered Ti Films Using Microwave Plasama CVD"," J.Cryst.Growth. (1991)
[Publications] M.Akazawa: "“Surface Passivation of In_<0.53>Ga_<0.47> As Using Thin Si Layers By Novel Inーsitu Interface Control Processes"" Proc.2nd Int.Conf.on Inp and Related Materials (April 23ー25,1990,Denver). 88-91 (1990)
[Publications] T.Saitoh: "“A Computer Simulation of the Recombination Process at Smiconductor Surfaces"" Ext.Abs.of the 22nd Conf.on Solid State Devices and Materials;Japanese Journal of Applied Physics.29. L2296-L2299 (1990)
[Publications] H.Hasegawa: "“Characterization of InGaAs Surface Passivation Structure Having an Ultratin Si Interface Control Layer"," Journal of Vacuum Science & Technology. B8. 867-873 (1990)
[Publications] H.Ishii: "“Formation mechanism of Schottky barriers on MBE grown GaAs surfaces subjected to various treatments"" Appl.Surf.Sci.(1991)
[Publications] H.Hasegawa: "“Relationship among Surface State Distribution,Recombination velocity and Photoluminescence Intensity on Compound Semiconductor surfaces"," Appl.Surf.Sci.(1991)
[Publications] T.Kajiwara: "“Mechanical and Electrical Properties of rf Sputtered LaB_6 Thin Films on Glass Substrates"" Vacuum. 41. 1224-1228 (1990)
[Publications] S.Baba: "“Island Structure of SputterーDeposited Ag Thin Films"" Vacuum. 42. 279-282 (1991)
[Publications] T.Nakano: "“Structure Modification of RF Sputtered LaB_6 Thin Films by Internal Stress"" J.Vac.Sci.Technol.A9. (1991)
[Publications] A.Kinbara,: "“Growth Process of Wrinkles Generated in Deposited Films"" J.Vac.Sci.Technol.A9. (1991)
[Publications] K.Kobayashi,S.Bliigel,H.Ishida and K.Terakura: "“Atomic Arrangement of Alkali Adatoms on Si(001)ー2×1 Surface"," Surface Science. 242. 349-353 (1991)
[Publications] Y.Morikawa,K.Kobayashi,K.Terakura and S.Bliigel: "“A Theoretical Support to DoubleーLayer Model for potassium Adsorption on Si(001) Surface"," Phy.Rev.B. (1991)
[Publications] N.Isshiki: "“Effect of Electronic States of the tip on the STM Image of graphite"" Surface sci.Letl.2.38. L439-445 (1990)
[Publications] M.Tsukada: "“Effect of Tip Atomic and Electronic Structure on Scanning Tunneling Microscopy/spectroscopy"" Surface Science. (1991)
[Publications] T.Sugino: "“Effect of Suface Phosphidization on GaAs Schottky Barrier Junctions"" Japanese J.Appl.Phys.29ー6. L864-L866 (1990)
[Publications] T.Sugino: "“Evidence for Phosphorus Passivation of PlasmaーInduced Damage at GaAs Surface Probed by EL2 Traps" Japanese J.Appl.Phys.29ー9. L1575-L1577 (1990)
[Publications] T.Sigono: "“Formation of InP MetalーInsulatorーSemiconductor Schottky Junctions by UV LaserーInduced Photolytic Process of Phosphine Gas"" Japanese J.Appl.Phys.29ー10. U771-U774 (1990)
[Publications] T.Sugino: "“Barrier Height Enhancement of InP Schottky Junctions by Treatment with.PhotoーDecomposed PH_3"" Electronics Letters. 26ー21. 1750-1751 (1990)
[Publications] T.Sugino: "“Ultraviolet LaserーAssisted Surface Treatment of InP with Phosphine Gas"" J.Electonic Materials. (1991)
[Publications] T.Sugino: "“Hydrogenation of InP by Phosphine Plasma"" Japanese J.Appl.Phys.(1991)
[Publications] F.Yonezawa: "“Theoretical Study of MetalーNonmetal Transition in Microclusters"" J.NonーCrystal,Solids. 117/118. 477-480 (1990)
[Publications] H.Mori: "“Effects of nonmagnetic impurity atoms on the spinーdensityーwave model of highーtemperature superconductivity"" Phys.Rev.B. 41. 6479-6487 (1990)
[Publications] R.Aoki: "“Tunneling Characteristics of La_<2ーx>Sr_xCuO_<4ーy>/Metal Contact"" Proc.of 2nd Int.Sympo on PCOS'91. (1991)
[Publications] M.Nakamura: "“Infrared Characterization of Interface State Redution by F_2 Treatment in SiO_2/Si Structure using PhotoーCVD SiO_2 Film"," Jpn.J.Appl.Phys.29. L687-L669 (1990)
[Publications] H.Tokumoto: "“Scanning tunneling microscopy of(112) oriented steps on a cleaved Si(111)surface"" Appl.Phys.Lett.56. 743-745 (1990)
[Publications] H.Tokumoto: "“Scanning tunneling microscopy of microstructures on cleaved Si(111)surface"" J.Vac.Sci.Technol.(1991)
[Publications] M.Kato: "“Soliton Lattice Modulation of Incommensurate spin Density Wave in Two Dimensional Hubbard Medel ーA Mean Field Studyー"" J.Phys.Soc.Japan. 59. 1047-1058 (1990)
[Publications] Y.Horino: "“Microbeam Line of MeV Heavy Ions for Materials Modification and InーSitu Analysis"" Jpn.J.Appl.Phys.29. 2680-2683 (1990)
[Publications] Y.Kimura: "“Formation of Commensurate Interface Layer of Ag on Si(100)"" Surf.Sci.(1991)

1990 Fiscal Year Annual Research Report

金属ー半導体積層界面の基礎

Principal Investigator

平木 昭夫 大阪大学, 工学部, 教授 (50029013)

Research Products

[Publications] T.Ito: "“Structural Change of Crystalline Porous Silicon with Chemisorption"" Jpn.J.Appl.Phys.29ー2. L201-L204 (1990)

[Publications] Y.Mori: "“Properties of CVD Diamond/Metal Interfaces"" Mat.Res.Soc.Symp.Proc.162. 353-358 (1990)

[Publications] T.Ito: "“Homoepitaxial Growth of Sillicon on Anodized Porous Silicon"" Appl.Surf.Sci.44. 96-102 (1990)

[Publications] A.Yamama: "“Silicidation of Patterned Narrow Area of Porous silicon"" Vacuum. 41. 1254-1257 (1990)

[Publications] Y.Mori: "“Properties of Metal/Diamond Interface and Effects if Oxygen Adsorbed onto Diamond Surface"" Appl.Phys..Lett.,. 58. 940-941 (1991)

[Publications] 神谷 栄二: "「埋もれたシリコン界面の高速イオン散乱法による評価」" 電子情報通信学会技術研究報告. 90ー349. 65-69 (1990)

[Publications] T.Ito: "“Role of Hydrogen Atoms in Anodized porous Silicon"" Physica B. 170. (1991)

[Publications] T.Yasusmatsu: "“Ultrathin Si Film Grown Epitaxially on Porous Silicon"" Appl.Surf.Sci.(1991)

[Publications] J.Moon: "“Possibility of Chemical Information Detection at MetalーSilicon Interfaces Using High Energy Ion Scattering"" Appl.Sur.Sci.(1991)

[Publications] J.Moon: "“Formation of Tin by Nitridation of Magnetron Sputtered Ti Films Using Microwave Plasama CVD"," J.Cryst.Growth. (1991)

[Publications] M.Akazawa: "“Surface Passivation of In_<0.53>Ga_<0.47> As Using Thin Si Layers By Novel Inーsitu Interface Control Processes"" Proc.2nd Int.Conf.on Inp and Related Materials (April 23ー25,1990,Denver). 88-91 (1990)

[Publications] T.Saitoh: "“A Computer Simulation of the Recombination Process at Smiconductor Surfaces"" Ext.Abs.of the 22nd Conf.on Solid State Devices and Materials;Japanese Journal of Applied Physics.29. L2296-L2299 (1990)

[Publications] H.Hasegawa: "“Characterization of InGaAs Surface Passivation Structure Having an Ultratin Si Interface Control Layer"," Journal of Vacuum Science & Technology. B8. 867-873 (1990)

[Publications] H.Ishii: "“Formation mechanism of Schottky barriers on MBE grown GaAs surfaces subjected to various treatments"" Appl.Surf.Sci.(1991)

[Publications] H.Hasegawa: "“Relationship among Surface State Distribution,Recombination velocity and Photoluminescence Intensity on Compound Semiconductor surfaces"," Appl.Surf.Sci.(1991)

[Publications] T.Kajiwara: "“Mechanical and Electrical Properties of rf Sputtered LaB_6 Thin Films on Glass Substrates"" Vacuum. 41. 1224-1228 (1990)

[Publications] S.Baba: "“Island Structure of SputterーDeposited Ag Thin Films"" Vacuum. 42. 279-282 (1991)

[Publications] T.Nakano: "“Structure Modification of RF Sputtered LaB_6 Thin Films by Internal Stress"" J.Vac.Sci.Technol.A9. (1991)

[Publications] A.Kinbara,: "“Growth Process of Wrinkles Generated in Deposited Films"" J.Vac.Sci.Technol.A9. (1991)

[Publications] K.Kobayashi,S.Bliigel,H.Ishida and K.Terakura: "“Atomic Arrangement of Alkali Adatoms on Si(001)ー2×1 Surface"," Surface Science. 242. 349-353 (1991)

[Publications] Y.Morikawa,K.Kobayashi,K.Terakura and S.Bliigel: "“A Theoretical Support to DoubleーLayer Model for potassium Adsorption on Si(001) Surface"," Phy.Rev.B. (1991)

[Publications] N.Isshiki: "“Effect of Electronic States of the tip on the STM Image of graphite"" Surface sci.Letl.2.38. L439-445 (1990)

[Publications] M.Tsukada: "“Effect of Tip Atomic and Electronic Structure on Scanning Tunneling Microscopy/spectroscopy"" Surface Science. (1991)

[Publications] T.Sugino: "“Effect of Suface Phosphidization on GaAs Schottky Barrier Junctions"" Japanese J.Appl.Phys.29ー6. L864-L866 (1990)

[Publications] T.Sugino: "“Evidence for Phosphorus Passivation of PlasmaーInduced Damage at GaAs Surface Probed by EL2 Traps" Japanese J.Appl.Phys.29ー9. L1575-L1577 (1990)

[Publications] T.Sigono: "“Formation of InP MetalーInsulatorーSemiconductor Schottky Junctions by UV LaserーInduced Photolytic Process of Phosphine Gas"" Japanese J.Appl.Phys.29ー10. U771-U774 (1990)

[Publications] T.Sugino: "“Barrier Height Enhancement of InP Schottky Junctions by Treatment with.PhotoーDecomposed PH_3"" Electronics Letters. 26ー21. 1750-1751 (1990)

[Publications] T.Sugino: "“Ultraviolet LaserーAssisted Surface Treatment of InP with Phosphine Gas"" J.Electonic Materials. (1991)

[Publications] T.Sugino: "“Hydrogenation of InP by Phosphine Plasma"" Japanese J.Appl.Phys.(1991)

[Publications] F.Yonezawa: "“Theoretical Study of MetalーNonmetal Transition in Microclusters"" J.NonーCrystal,Solids. 117/118. 477-480 (1990)

[Publications] H.Mori: "“Effects of nonmagnetic impurity atoms on the spinーdensityーwave model of highーtemperature superconductivity"" Phys.Rev.B. 41. 6479-6487 (1990)

[Publications] R.Aoki: "“Tunneling Characteristics of La_<2ーx>Sr_xCuO_<4ーy>/Metal Contact"" Proc.of 2nd Int.Sympo on PCOS'91. (1991)

[Publications] M.Nakamura: "“Infrared Characterization of Interface State Redution by F_2 Treatment in SiO_2/Si Structure using PhotoーCVD SiO_2 Film"," Jpn.J.Appl.Phys.29. L687-L669 (1990)

[Publications] H.Tokumoto: "“Scanning tunneling microscopy of(112) oriented steps on a cleaved Si(111)surface"" Appl.Phys.Lett.56. 743-745 (1990)

[Publications] H.Tokumoto: "“Scanning tunneling microscopy of microstructures on cleaved Si(111)surface"" J.Vac.Sci.Technol.(1991)

[Publications] M.Kato: "“Soliton Lattice Modulation of Incommensurate spin Density Wave in Two Dimensional Hubbard Medel ーA Mean Field Studyー"" J.Phys.Soc.Japan. 59. 1047-1058 (1990)

[Publications] Y.Horino: "“Microbeam Line of MeV Heavy Ions for Materials Modification and InーSitu Analysis"" Jpn.J.Appl.Phys.29. 2680-2683 (1990)

[Publications] Y.Kimura: "“Formation of Commensurate Interface Layer of Ag on Si(100)"" Surf.Sci.(1991)

平木昭夫大阪大学, 工学部, 教授 (50029013)

[Publications] 神谷栄二: "「埋もれたシリコン界面の高速イオン散乱法による評価」" 電子情報通信学会技術研究報告. 90ー349. 65-69 (1990)