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1991 Fiscal Year Final Research Report Summary

Study on Ultra High Speed Integrated Circuit Employing Metals in the Heart of the Device Structure

Research Project

Project/Area Number 02402031
Research Category

Grant-in-Aid for General Scientific Research (A)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionTohoku University

Principal Investigator

OHMI Tadahiro  Professor, Dept. Electronic Engineering Tohoku University, 工学部, 教授 (20016463)

Co-Investigator(Kenkyū-buntansha) MORITA Mizuho  Associate Professor, Dept. Electronic Engineering Tohoku University, 工学部, 助教授 (50157905)
SHIBATA Tadashi  Associate Professor, Dept. Electronic Engineering Tohoku University, 工学部, 助教授 (00187402)
Project Period (FY) 1990 – 1991
KeywordsUltra-High Speed Integrated Circuit / Low Temperature Processing / Metal-Silicon Contact / Ultra Clean Technology / Low-Energy Ion Bombardment / H_2-Plasma Cleaning / Ion Implantation / Self-Aligne Metal-Gate Mosfet
Research Abstract

Realization of ultra high speed integrated circuits using ultimate-small dimension devices requires the abundant use of low-resistance metals in the heart of device structures. For this purpose, the development of technologies for high quality metal thin film formation, ideal metal/silicon contact formation and low temperature processing is most essential. We have attained great achievements in these technologies by employing ultra clean technologies.
High quality metal films have been successfully grown using low kinetic-energy particle bombardment process. Excellent surface smoothness of Ta and Ti thin films have been obtained by the optimization of ion energy and flux conditions as well as by the employment of low-energy H_2 plasma cleaning techniques. Almost single crystal Cu thin films have been also grown on SiO_2 by the combination of low-energy ion bombardment and following thermal anneal. The Cu interconnects thus formed exhibit very large resistance against electromigration failure, ensuring 3 to 4 orders of magnitude larger lifetime as compared to conventional AI interconnects. By combining these film formation processes with clean nitrogen seal processing, ideal metal/silicon interfaces can be successfully formed. Use of metals in the heart of device structures very much depends on the temperature of pn junction formation. We have developed ultraclean ion implantation technology that enables us to anneal As implanted silicon at temperatures as low as 450゚C. We fabricated metal-gate self-aligned MOSFET's using this low temperature annealing process. It has been experimentally shown that the metal gate MOS transistor operates much faster than silicon gate MOSFET's when the gate-capacitance-load is sufficiently large for driving large current. Thus the basic technologies necessary for ultra high speed device fabrication as well as the actual device structures employing these advanced processes have been successfully developed in this research project.

  • Research Products

    (29 results)

All Other

All Publications (29 results)

  • [Publications] T.Ohmi: "Large-Electromigration-Resistance Copper Interconnect Technology for Subhalf-micron ULSI'S" Technical Digest,International Electron Devices Meeting 1991,Washington D.C.285-288 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Ohmi: "Formation of Copper Thin Films by a Low Kinetic Energy Particle Process" Journal of Electrochemical Societh. 138. 1089-1097 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Otsuki: "High Performance Copper Metallezation for ULSI Interconnects" Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials. 186-188 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Nitta: "Electrical Properties of Giant-Grain-Copper Thin Films Formed by a Low Kinetic Energy Particle Process" Journal of Electrochemical Society. (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Nitta: "Evaluating the Large Electromigration Resistance of Copper Intercennects Emplaying a Newly-Developed Life-Test Method" Journal of Electrochemical Society.

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Kato: "Elimination of Metal-Sputtering Contamination in Ion Implanter for Low-Leakage-Current p-n Junction Formation" Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials. 565-567 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Yoshie: "Ion Flux Effect in Low Temperature silicon Epitaxy by Low-Energy Ion Bombardment" Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials. 41-43 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Uetake: "In-Situ Substrate Surface Cleaning for Low Temperature Silicon Epitaxy By Hydogen-Added Low-Energy Argon Ion Bombardment" Proceedings of International Symposium on Automated IC Manufacturing. (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Aoki: "Formation of High Quality Refractary-Metal Thin Films by Low-Energy Ion Bombardment" Proceedings of International Symposium on Automated IC Manufacturing. (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Ohmi: "Self-Aligned Aluminum-Gate MOSFET'S Having Ultra Shallow Junctions Formeel by 450C Furnace Annealing" IEEE Electron Device Letters.

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Kuwabara: "Ideal Metal/silicon Contact Formation By Clean-Nitrogen-Seal Processing" Proceedings of the 3rd International Symposium on ULSI Science and Technology. 321-329 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H. H. Goto, M. Sasaki, T. Ohmi, T. Shibata, A. Yamagami, N. Okamura and O. Kamiya: "A Low Damage, Low Contaminant Plasma Processing System Utilizing Energy Clean Technology" IEEE Trans. Semiconductor Manufacturing. 4, No. 2. 111-120 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. -D. Lo^^< f>we, H. H. Goto, and T. Ohmi: "Control of Ion Energy and Flux in a Dual Radio Frequency Excitation Magnetron Sputtering Discharge" J. Vac. Sci. Technol.A9(6). 3090-3099 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. H. Goto, H. -D. Lowe, T. Ohmi, T. Shibata, A. Yamagami, N. Okamura, and O. Kamiya: "Development of Dual Excitation Frequency Plasma Equipment (DEPE) to Minimize Wafer Surface Damage and Chamber Material Contamination" Proc. 6th Symp. Automated Integrated Circuits Manufacturing. The Electrochemical Soc.167-178 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. H. Goto, M. Sasaki, T. Ohmi, T. Shibata, A. Yamagami, N. Okamura, and O. Kamiya: "Minimizing Wafer Surface Damage and Chamber Material Contamination in New Plasma Processing Equipment" Japanese Journal of Appl. Phys.29, No. 12. L2395-L2397 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Ohmi: "Ultra-Clean Low Temperature Si Processes under the Assistance of Energy Controlled Ion Bombardment" Ext. Abstract 19th International Conf. Solid State Devices and Materials, Yokohama. 481-483 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Yoshie, M. Hirayama, and T. Ohmi: "Ion Flux Effect in Low Temperature Silicon Epitaxy by Low-Energy Ion Bombardment" 41-43

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Kuwabara, M. Otsuki, and T. Ohmi: "Ideal Metal/Silicon Contact Formation by Clean-Nitrogen-Seal Processing" Proc. 3rd Int. Symp. ULSI Science and Technology. The Electrochem. Soc.321-329 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Uetake, K. Morizuka, and T. Ohmi: "In-Situ Substrate Surface Cleaning for Low Temperature Silicon Epitaxy by Hydrogen Added Low-Energy Argon Ion Bombardment" Proc. Int. Symposium on Automated IC Manufacturing.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y. Aoki, S. Aoyama, H. Wakamatu, J. Watanabe, and T. Ohmi: "Formation of High Quality Refractory-Metal Thin Films by Low-Energy Ion Bombardment" Proc. Int. Symposium on Automated IC Manufacturing.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Otsuki, T. Takewaki, H. Kuwabara, T. Shibara, T. Ohmi, and T. Nitta: "High Performance Copper Metallization for ULSI Interconnects" Ext. Abst. 1991 Int. Conf. Solid State Devices and Materials, Yokohama. 186-188 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Ohmi, T. Saito, M. Otsuki, and T. Shibata: "Formation of Copper Thin Films by Low Kinetic Energy Particle Process" J. Electrochem. Soc.138, No. 4. 1089-1097 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Ohmi, T. Hoshi, T. Yoshie, T. Takewaki, M. Otsuki, T. Shibata, and T. Nitta: "Large-Electromigration-Resistance Copper Interconnect Technology for Subhalf Micro ULSI's" Technical Digest, IEEE Int. Electron Devices Meeting, Washington D. C.285-288 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Nitta, T. Ohmi, M. Otsuki, T. Takewaki, and T. Shibata: "Electrical Properties of Giant-Grain-Copper Thin Films Formed by a Low Energy Particle Process" J. Electrochem. Soc.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Nitta, T. Ohmi, T. Hoshi, S. Sakai, K. Sakaibara, S. Imai, and T. Shibata: "Evaluating the Large Electromigration Resistance of Copper Interconnects Employing a Newly-Developed Accelerated Life-Test Method" J. Electrochem. Soc.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Shibata, A. Okita, Y. Kato, T. Ohmi, and T. Nitta: "Dig. Tech. Papers, 1990 Symp." VLSI Technology, Honolulu. 63-63 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Nitta, T. Ohmi, Y. Ishihara, A. Okita, T. Shibata, J. Sugiura, and N. Ohwada: "Reverse-Bias Current Reduction in Low-Temperature-Annealed silicon pn Junction by Ultra Clean Ion-Implantation Technology" J. Appl. Phys.67, No. 12. 7402-7412 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y. Kato, S. Shimonishi, T. Ohmi, T. Shibata, and T. Nitta: "Elimination of Metal Sputter Contamination in Ion Implanter for Ion-Leakage-Current pn Junction Formation" Ext. Abst. 1991 Int. Conf. Solid State Device and Materials, Yokohama. 565-567 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Ohmi, S. Shimonishi, K. Kotani, T. Shibata, and T. Nitta: "Self-Aligned Aluminum-Gate MOSFET's Having Ultra-Shallow Junction Formed by 450゚C Furnace Annealing" IEEE Electron Device Letters.

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1993-03-16  

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