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1991 Fiscal Year Final Research Report Summary

Carbom free MOMBE growth by comlete cracking of the metal organic precarsores.

Research Project

Project/Area Number 02452144
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionUniversity of Tsukuba

Principal Investigator

HASEGAWA Fumio  University of Tsukuba, Professor, 物質工学系, 教授 (70143170)

Co-Investigator(Kenkyū-buntansha) SHIGEKAWA Hidemi  University of Tsukuba, Lecturer, 物質工学系, 講師 (20134489)
Project Period (FY) 1990 – 1991
KeywordsMOMBE / Molecular Beam Epitaxy / Organo-Metallic Compound / Carbon Contamination / Cracking / Dimethylamine Gallan / Hydride
Research Abstract

The aim of this work is to achieve a carbon free MOMBE growth by removing the carbon from methyl radical the metalorganic precursors, such as TMG.The first trial was complete cracking of the methane (CH_4), but it was found that it is difficult, e13EA\ : specially in vacuum, because that the sticking probability of methane on the heater is too small. Next trial was a reverse way : removal of methyl radical from metal organic as methane using atomic hydrogen produced by a heated tungsten (W) filament13EA\ : . It seemed to be possible because TMG (Trimethy gallium) was seemed to be cracked to gallium gydride (gallan) and methane, when a small amount of TMG was passed through a heated tungsten filament of about 2000゚C.However, when the amount of TMG was13EA\ : increased one order of magnitude in order to grow GaAs, it was found that the W filament was broken due to a reaction with the cracked gallium.
Finally, it was confirmed that the best way is to use a new precursor, dimethyl amine gallan (GaH_3-NH(CH_3)_2--DMAG), which has no direct bond between Ga and C.the carbon concentration was reduced by about 5 orders of magnitudes : from 10^<20> c13EA\ : m^<-3> for the film grown with TMG to 1,2x10^<15> cm^<-3> for the film grown by DMAG at 550C.The carbon reduction was also confirmed by photoluminescence. The DMAG was stable for about 2 months as far as it was kept at about -10゚C.

  • Research Products

    (6 results)

All Other

All Publications (6 results)

  • [Publications] R.kobayashi,K.Fujii and F.Hasegawa: "Etching of GaAs by Atomic Hydrogen Generated by a Tungsten Filament" Japan.J.Appl.Phys.30. L1447-L1449 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] R.Kobayashi,K.Fujii and F.Hasegawa: "Etching of GaAs and AlGaAs by H^* radical produced with a tungsten filament" Inst.Phys.Conf.Ser.No120 Proc of GaAs and Related Compounds Seattle. No.120. 43-48 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Ishikura,K.Hayashi T.Ogawa and F.Hasegawa: "Low carbon doped MOMBE using Dimethyl-Amine-Gallan" Tobe submitted to Japan.J.Appl.Phys.(1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] R.Kobayashi, K.Fujii and F.Hasegawa: "Etching of GaAs by Atomic Hydrogen Generated by a Tungsten Filament" Japan. J.Appl.Phys.30. L1447-L1449 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] R.Kobayashi, K.Fujii and F.Hasegawa: "Etching of GaAs and AlGaAs by H^<**> radical produced with a tungsten" Inst.Phys.Conf.Ser.No.120 Proc.of GaAs and Related Compounds, Seattle. No.120. 43-48 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Ishikura, K.Hayashi T.Ogawa and F.Hasegawa: "Low carbon doped MOMBE using Dimethyl-Amine-Gallan" To be submitted to Japan. J.Appl.Phys.(1993)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1995-03-27  

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