1991 Fiscal Year Final Research Report Summary
The Inverse Smith-Purcell Effect at Submillimeter Wavelengths
| Project/Area Number |
02452173
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子機器工学
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| Research Institution | Research Institute of Electrical Communication, Tohoku University |
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Principal Investigator |
BAE Jongsuck Research Institute of Electrical Communication, Tohoku University, Assistant, 電気通信研究所, 助手 (20165525)
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| Co-Investigator(Kenkyū-buntansha) |
MIZUNO Koji Research Institute of Electrical Communication, Tohoku University, Professor, 電気通信研究所, 教授 (30005326)
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| Project Period (FY) |
1990 – 1991
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| Keywords | Inverse Smith-Purcell effect / Grating linac / Laser-driven linac / CO_2 laser / Submillimeter wave laser |
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| Research Abstract |
This research project has been planned to study the inverse Smith-Purcell (ISP) effect experimentally and theoretically in order to confirm a possibility of an electron accelerating to several GeV/m by a laser-driven linacs.
In order to demonstrate the ISP effect at infrared wave region in which a C0_2 laser with an output power more than several TW exists, it has been discaussed theoretically in detail for the experimental results on the effect at submillimeter wave region. It has been found that an output signal of 1000 electrons per second can be obtained in the experiment of the ISP effect which are interacted with an infrared laser light. This shows that an observation of the effect at infrared wavelength of 10.6mum is possible. Based on the discussions described above, an experimental apparatus has been designed and fabricated as follows,
1. EMQ-switched CO_2 laser has been developed as a driving laser for an experiment of the ISP effect. This laser is new type Q-switched pulse laser with an output power of 7OkW and a repetition rate up to 9.2kpps for a fundamental Gaussian mode of operation.
2. Optical lens system is used to guide an infrared light beam from the C0_2 laser to the grating surface placed in a high vacuum chamber.
3. Silicon (Si) Gratng has been fabricated by using an antisotropic etching of Si to keep tolerances within <plus-minus>0.1mum for the designed values of the grating constan
4. Electron measurement system can detect electrons below 100 particles per second.
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Research Products
(8 results)
