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1991 Fiscal Year Final Research Report Summary

Development of Field Emission Type Ultra-High Vacuum Gauge

Research Project

Project/Area Number 02555009
Research Category

Grant-in-Aid for Developmental Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 物理計測・光学
Research InstitutionTokyo Institute of Technology

Principal Investigator

NISHIKAWA Osamu  Tokyo Inst. Technol., Mat, Sci. Eng., Professor, 大学院総合理工学研究所, 教授 (10108235)

Co-Investigator(Kenkyū-buntansha) ISHIKAWA Yuuichi  Hitachi, Ltd., Mechanical Eng. Res. Lab., Sr. Researcher, 機械研究所, 主管研究員
TOMITORI Masahiko  Tokyo Inst. Technol., Mat, Sci. Eng., Research Asso., 大学院総合理工学研究所, 助手 (10188790)
Project Period (FY) 1990 – 1991
KeywordsTip Apex / Field Emission / Field Emission Microsocpe (FEM) / Surface / Ultra-High Vacuum / Imaging Faraday Cage / Vacuum Gauge
Research Abstract

Field emission is the electron tunneling through the potential barrier lowered by the high electric field - 0.5V/A. The tunneling rate for the electrons confined in the surface varies sensitively with the adsorption of gas atoms and molecules. In this study the high field required for the field emission was realized by employing a hemispherical apex of a sharp tip of a field emission microscope (FIM) and by applying a high negative voltage. The vacuum was measured by observing the reduction rate of field emission current with time.
The study aimed the following items : (1) Improvement of the existing vacuum system up to the vacuum of 10^<-11> - 10^<-13> Torr, (2) Clarification of the relation between the reduction rate of emission current and vacuum, (3) Examination of various metals as tip materials, (4) Evaluation of the advantageous point of multiple tips, (5) Development of a new highly efficient and reliable system to measure emission currents.
The results of above items are as follows : (1) The vacuum better than 10^<-11> Torr could not be obtained possibly due to the insufficient surface refinish of the vacuum chamber, (2) It was found that the reduction rate of emission current is fairly well proportional to vacuum, (3) The study indicates that a W tip is more sensitive than an Ir tip for vacuum measurement because the W surface is more active than the Ir surface, (4) No multiple tip was examined because the study of item (5) must be preceded, (5) In order to measure the emission current efficiently and precisely, a 2-dimensional imaging Faraday cage was developed. Since the screen of the imaging cage projects the image of the currents emitted from every apex of the multiple tip, it allows us to examine all the tips directly at a single glance.

  • Research Products

    (18 results)

All Other

All Publications (18 results)

  • [Publications] O.Nishikawa,H.Koyama M.Tomitori and F.Iwawaki: "Tunneling Characteristics of Silicon Covered Molybdenum Tip Apex" J.Vac.Sci Technol.B. 9. 789-793 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] O.Nishikawa,M.Tomitori and F.Iwawaki: "Atomic Configuration of Tip Apexes and Scanning Tunneling Microscopy-Spectroscopy" Materials Science and Engineering. B8. 81-97 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F.Iwawaki,M.Tomitori and O.Nishikawa: "STM Study of Epitaxial Growth of Ge on Si(001)" Surf.Sci.Lett.253. L411-L416 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F.Iwawaki,M.Tomitori and O.Nishikawa: "STM/STS Observation of Step Structures of Si(001)and(111)Surfaces" J.Vac.Sci.Technol.B. 9. 711-715 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] O.Nishikawa,H.Koyama and M.Tomitori: "Work Function,Field Emitted Electron Energy Spectrum and Surface Composition of Silicon Coverd Molybdenum" Surf.Sci. 246. 201-204 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] O.Nishikawa,M.Tomitori F.Iwawaki and N.Hirano: "Correlation between Scanning Tunneling Microscopy/Spectroscopy Images and Apex Profiles of Scanning Tips" J.Vac.Sci.Technol.B. 8. 421-424 (1990)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M. Tomitori, F. Iwawaki, N. Hirano, F. Katsuki and O. Nishikawa: "Corrugation of Si Surfaces and Profiles of Tip Apexes" J. Vac. Sci. Technol. A. 8. 222 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] O. Nishikawa, M. Tomitori, F. Iwawaki and N. Hirano: "Correlation Between Scanning Tunneling Microscopy/Spectroscopy Images and Apex Profiles of Scanning Tips" J. Vac. Sci. Technol. A. 8. 421 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Tomitori, N. Hirano, F. Iwawaki, T. Watanabe, T. Takayanagi and O. Nishikawa: "Elaboration and Evaluation of Tip Maniupulation of Scanning Tunneling Microscopy" J. Vac. Sci. Technol. A. 8. 425 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] O. Nishikawa, H. Koyama and M. Tomitori: "Work Function, Field Emitted Electron Energy Spectrum and Surface Composition of Silicon Covered Molybdenum" Surf. Sci.246. 201 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F. Iwawaki, M. Tomitori and O. Nishikawa: "STM/STS Observation of Step Structures of Si (001) and (111) Surfaces" J. Vac. Sci. Technol. B. 9. 711 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] O. Nishikawa, H. Koyama, M. Tomitori and F. Iwawaki: "Tunneling Characteristics of Silicon Covered Molybdenum Tip Apex" J. Vac. Sci. Technol. B. 9. 789 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] O. Nishikawa, M. Tomitori and F. Iwawaki: "Atomic Configurations of Tip Apexes and Scanning Tunneling Microscopy/Spectroscopy" Materials Sci. Engineering. B8. 81 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F. Iwawaki, M. Tomitori and O. Nishikawa: "STM Study of Epitaxial Growth of Ge no Si (001)" Surf. Sci. Lett.253. L411 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F. Iwawaki, M. Tomitori and O. Nishikawa: "STM Study of Ge Overlayers on Si (001)" Surf. Sci.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] O. Nishikawa, M. Tomitori and F. Iwawaki: "High Resolution Tunneling Microscopies : from FEM to STM" Surf. Sci.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F. Iwawaki, M. Tomitori, H. Kato and O. Nishikawa: "STM Study of Geometric and Electronic Strctures of Ge Dimers on Si (001)" Ultramicroscopy.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F. Iwawaki, M. Tomitori and O. Nishikawa: "STM Study of Initial Stage of Ge Epitaxy on Si (001)" Ultramicroscopy.

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1993-03-16  

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