1991 Fiscal Year Final Research Report Summary
Crystal Growth of High-Quality SiC by Step-Controlled Epitaxy and its Application for Power Devices
| Project/Area Number |
02555059
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| Research Category |
Grant-in-Aid for Developmental Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | Kyoto University |
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Principal Investigator |
MATSUNAMI Hiroyuki Kyoto Univ., Dept. Eng., Professor, 工学部, 教授 (50026035)
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| Co-Investigator(Kenkyū-buntansha) |
KIMOTO Tsunenobu Kyoto Univ., Dept. Eng., Research Associate, 工学部, 助手 (80225078)
YOSHIMOTO Masahiro Kyoto Univ., Dept. Eng., Research Associate, 工学部, 助手 (20210776)
FUYUKI Takashi Kyoto Univ., Dept. Eng., Associate Professor, 工学部, 助教授 (10165459)
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| Project Period (FY) |
1990 – 1991
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| Keywords | silicon carbide / power device / breakdown field / low-temperature growth / polytype control / step-flow growth |
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| Research Abstract |
Vapor phase epitaxial growth of SiC on off-oriented 6H-SiC substrates (step-controlled epitaxy) has been carried out at low temperatures of 1000-1500ﾟC. Homoepitaxial growth of 6H-SiC is achieved at a temperature as low as 1200ﾟC governed by step-flow growth on off-oriented (0001) faces and at 1100ﾟC on (0114)C faces. The growth rate is limited by the supply of Si species. In step-controlled epitaxy, crystal growth is controlled by the diffusion of reactants in a stagnant layer. On the basis of these results, the growth mechanism is discussed in detail.
Doping of N and Al during growth have been tried, and the electrical properties have been examined. Schottky barrier diodes fabricated with undoped and N-doped grown layers show excellent characteristics. High breakdown fields of 1-4x10^6V/cm are obtained.
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