1991 Fiscal Year Final Research Report Summary
Studies on preparation of transparent conductive oxide thin films by sol-gel method
| Project/Area Number |
02555158
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| Research Category |
Grant-in-Aid for Developmental Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
無機工業化学・無機材料工学
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| Research Institution | Hokkaido University |
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Principal Investigator |
KODAIRA Kohei Hokkaido Univ., Fac. of Eng., Professor, 工学部, 教授 (60002002)
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| Co-Investigator(Kenkyū-buntansha) |
FURUSAKI Tsuyoshi Hokkaido Univ., Fac. of Eng., Research Associate, 工学部, 助手 (90190149)
HIGUCHI Mikio Hokkaido Univ., Fac. of Eng., Research Associate, 工学部, 助手 (40198990)
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| Project Period (FY) |
1990 – 1991
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| Keywords | Transparent conductive / Tin oxide / Sol-gel method / Indium oxide / ITO thin film / oxide thin film |
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| Research Abstract |
Sn-doped In_2O_3 and Sb-doped SnO_2 thin films with 140 nm in thickness prepared on fused silica substrates by a sol-gel method. The transmittance of these films was 90% in the visible region. The interaction between the film and a fused silica substrate was not recognized by firing above 55ﾟC for 30minutes.
In_2O_3 thin films crystallized above 350ﾟC, after OH groups were dehydrated during the firing. The minimum resistivity (3X10^<-3>OMEGAcm) was attained for the film with 7mol%Sn prepared at 850ﾟC for 30 minutes. After the film was annealed at 300ﾟC for 30 minutes in vacuum, the resistivity of the film decreased to 7X10^<-4>OMEGAcm.
SnO_2 thin films progressively crystallized above 550ﾟC, after OH groups were dehydrated during the firing. Grain growth of primary particles in the films proceeded with raising up firing temprature and also without any substantial change in the porosity. The minimum resistivity (3X10^<-3>OMEGAcm) was attained for the film with 7.5mol%Sb prepared at 800ﾟC for 30 minutes.
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