1991 Fiscal Year Annual Research Report

新機能光デバイスのための化合物半導体の物性制御の研究

Research Project

Project/Area Number	03204004
Research Institution	Chiba University
Principal Investigator	吉川明彦千葉大学, 工学部, 教授 (20016603)
Co-Investigator(Kenkyū-buntansha)	荒井滋久東京工業大学, 工学部, 助教授 (30151137) 小林洋志鳥取大学, 工学部, 教授 (40029450) 吉田博東北大学, 理学部, 助手 (30133929)
Keywords	ワイドギャップIIーVI族半導体 / 青色発光素子 / 物質設計 / 補償機構 / エレクトロゥミネッセンス / (IIaーVIb) / (IIbーVIb)多層薄膜 / 量子細線レ-ザ / 量子箱
Research Abstract	化合物半導体の新機能性の発現のための物質設計,物性制御に関して以下のような研究成果が得られた. 1.経験的パラメ-タを一切含まない第1原理からの分子動力学法による電子状態計算に基づいて、新しい二つの補償効果(Type A and B Compensation)を見いだした。Type Aでは格子間位置に於けるドナ-の原子移動障壁は0.2eVでありLiドナは室温でも移動しドナからアクセプタへの電荷移動によってアクセプタを不活性化する。Type BではLi原子がZn置換位置からはずれて格子間位置に留まりドナ準位を形成し、イオン化しアクセプタに電荷移動することによりアクセプタを不活性化する。これにより、安定で大きい伝導度を持つp型ZnSe作製のための浅い不純物のド-パントの候補を理論的手法により特定することができた。(吉田) 2.Arイオンレ-ザを用いた光MOVPEでNH_3による窒素添加p型ZnSeの成長を検討したところ、従来より低温で多量のアクセプタを添加することに成功した。またこの時レ-ザ光の偏光方向と基板の面方位の関係が窒素の添加効率に大きな影響を与えることを見いだした。一方、ワイドギャップの混晶系としてZnCdSのMOVPE成長を検討し、混晶組成比の制御及び沃素添加による低抵抗膜の作製に功成した。この時成比が0.5付近でキャリアの補償中心が急激に増加することを示した。(吉川) 3.(SrS/ZnS)多層薄膜を作製するため、まず、ホットウォ-ルエピタキシ-法を用いてSrS,ZnS薄膜の成長条件を調べた。蒸発源にSr金属(550℃)とS粉末(120℃)を用いて基板温度400℃でガラス基板上にSrS薄膜が成長することが分かった。同様にしてZnS薄膜も得られる。(SrS:Ce/ZnS)多層薄膜エレクトロルミネッセンス(EL)素子を作製し、従来のSrS:Ce薄膜ELより優れた特性を得た。(小林) 4.InP基板上の格子整合系(GaInAs/InP5層多重量子箱構造を世界で初めて試作し、その電界屈折率変化スペクトルペクトルを測定した。また、量子細線レ-ザ作製に於ける再成長プロセスの改善を行い、GaInAs/InP3層量子細線レ-ザの室温連続発振動作を得ることに成功した。(荒井)

Research Products

(35 results)

All Other

All Publications (35 results)

[Publications] A.Yoshikawa: "Effects of Ar ion Laser Irradiation on MOVPE of ZnSe Using DMZn and DMSe as Reactants" Journal of Crystal Growth. 107. 653-658 (1991)
[Publications] T.Okamoto: "Effects of Substrate Materials and Their Properties on Photoassisted Metalorganic Vapor Phase Epitaxy of ZnSe" Japanese Journal of Applied Physics. 30(2A). L156-L159 (1991)
[Publications] S.Yamaga: "Epitaxial ZnS MπS Blue Light Emitting Diode Fabricated on n-GaAs by Low-Pressure Metalorganic Vapor Phase Epitaxy" Japanese Journal of Applied Physics. 30(3). 437-441 (1991)
[Publications] A.Yoshikawa: "Effects of Substrate Materials on Ar Lon Laser-Assisted MOVPE of ZnSe Using DMZn and DMSe as Reactants" MRS Symposium Proceedings on Heteroepitaxy of Dissimilar Materials. 221. 117-122 (1991)
[Publications] A.Yoshikawa: "Ar Ion Laser Irradiation Effects on the MOVPE Growth of ZnSe Using Dimethylzinc and Hydrogen Selenide as Reactants" Journal of Crystal Growth. 115. 274-278 (1991)
[Publications] S.Yamaga: "Dependence of Electrical and Optical Properties of Iodine-Doped Cubic ZnCdS Films on Solid Compositions" Journal of Crystal Growth.
[Publications] S.Yamaga: "Atomic Layer Epitaxy of ZnS by a New Gas Supplying System in Low-Pressure Metalorganic Vapor Phase Epitaxy" Journal of Crystal Growth.
[Publications] A.Yoshikawa: "On the Mechanism of Growth-Rate Enhancement by Photocatalysis in Metalorganic Vapor Phase Epitaxy of ZnSe" Journal of Crystal Growth.
[Publications] S.Matsumoto: "New Surface Passivation Method for GaAs and Its Effect on the Initial Growth Stage of Heteroepitaxial ZnSe Layer" Applied Surface Science.
[Publications] C.Kaneta: "Atomic Configuration and Its Stability of Cabon-Oxygen Complex in Silicon" Proceedings of 20th International Conference on the Physics of Semiconductors. 638-642 (1991)
[Publications] T.Sasaki: "Electronic Structure and Stability of an Impurity Atom of Li in ZnSe" Proceedings of 20th International Conference on the Physics of Semiconductors. 561-565 (1991)
[Publications] T.Sasaki: "Li Impurity in ZnSe:Electronic Structure and the Stability of the Acceptor" Physical Review. B43. 9362-9366 (1991)
[Publications] H.Katayama-Yoshida: "On the Mechanism of the High-Tc Superconductors" Chemistry Today. 244. 18-24 (1991)
[Publications] H.Katayama-Yoshida: "Phonon Anomalies in High-Temperature Superconductors" Butsuri. 46. 785-789 (1991)
[Publications] H.Katayama-Yoshida: "Electronic Structure of Positive Muon in Semiconductors" Special Issue of Muon Spin Rotation Solid State Physics. 26. 837-843 (1991)
[Publications] T.Sasaki: "Self-compensation Mechanism in II-VI Semiconductors" Optoelectronics-Devices and Technologies.
[Publications] C.Kaneta: "Stabilizing Mechanism and Impurity Vibrations of the Carbon-Oxygen Complexes in Crystalline Silicon" Physical Review B.
[Publications] T.Sasaki: "Electronic Structure Calculation for Materials Design" Proceedings of International Conference on Computer Application to Material Science and Engineering. CAMSE90. 169-177 (1991)
[Publications] H.Kaayama-Yoshida: "Hyperfineand Superhyperfine Interacion Parameters of Interstitial 3d Transition Atom Impurities in Semiconductors" the Springer Series in Solid State Science.
[Publications] H.Kobayashi: "Multicolor Thin Film Electroluminescence Device" Proceeding of the 4th Asia Pacific Physics Conference. 2. 1012-1017 (1991)
[Publications] S.Tanaka: "Photo-Induced Transferred Charge in Rare-Earth-Doped Alkaline-Earth Sulfide Electroluminescent Thin Films" Japanese Journal of Applied Physics. 30(6A). L1021-L1024 (1991)
[Publications] S.Tanaka: "Luminescence Improvement of Blue-and White-Emitting SrS TFEL Devices by Annealing in Ar-S Atmosphere" Record of the International Display Research Conference. 137-140 (1991)
[Publications] S.Tanaka: "Excitation Mechnism of Tm^3 Centers in ZnS Electroluminescent Thin-Films" Journal of Crystal Growth.
[Publications] K.Ohmi: "(Y_2O_2S:Tb/ZnS)_n Multi-Layer Thin-Film Electroluminescent Devices Prepared by Multi-Source Deposition Method" Jpaanese Journal of Applied Physics.
[Publications] K.Shimomura: "Semiconductor Intersentional Optical Switch Using Positive Index Variation" Transctions on IEICE. E74(2). 378-383 (1991)
[Publications] M.Kohtoku: "Switching Operation in GaInAs/InP MQW Intergrated-Twin-Guide(ITG) Optical Switch" IEEE Photon.Tech.Letters. 3(3). 225-226 (1991)
[Publications] Y.Miyako: "Room Temperature Operation of GaInAs/GaInAsP/InP SCH Multi-Quantum-Film Laser with Narrow Wire-Like Active Region" IEEE Photon.Tech.Letters. 3(3). 191-192 (1991)
[Publications] K.G.Ravikumar: "Field Induced Refractive Index Variation Spectrum in GaInAs/InP Quantum Wire Structure" Applied Physics Letters. 58(10). 1015-1017 (1991)
[Publications] Y.Miyamoto: "Improvement of Regrown Interface in InP Organo-metallic Vapor Phase Epitaxy" Japanese Journal Applied Physics. 30(4B). L672-L674 (1991)
[Publications] T.Aizawa: "Observation of Field-Induced Refractive Index Variation in Quantum Box Structure" IEEE Photo.Tech.Letters. 3(10). 907-909 (1991)
[Publications] Y.Suzaki: "Enhancement of Electric Field-Induced Refractive Index Variation in a (GaInAsP)(InAs)/InP Asymmetric Multiple Quantum Film (MQF) Structure" IEEE Photon.Tech.Letters. 3(12). 1110-1112 (1991)
[Publications] K.Shimomura: "Operational Wavelength Range of GaInAs(P)/InP Intersectional Optical Switches Using Field-Induced Electro-optic Effect in Low-Dimensional Quantum-Well Structure" IEEE Journal of Quantum Electron.
[Publications] K.Shimomura: "Low Drive Voltage Intersectional Waveguide Optical Switch Using GaInAs/InP MQW Structure" IEEE Photon.Techn.Letters.
[Publications] A.Yoshikawa: "WIDEGAP II-VI COMPOUNDS FOR OPTO-ELECTRONIC APPLICATIONS "MOMBE Growth and Properties of Widegap II-VI Compounds"" Chapman and Hall Ltd.,
[Publications] 山賀重來: "CVDハンドブック(小宮山宏他編)3.3ワイドギャップIIーVI族化合物半導体のMOCVD" 朝倉書店, 20 (1991)

1991 Fiscal Year Annual Research Report

新機能光デバイスのための化合物半導体の物性制御の研究

Principal Investigator

吉川 明彦 千葉大学, 工学部, 教授 (20016603)

Research Products

[Publications] A.Yoshikawa: "Effects of Ar ion Laser Irradiation on MOVPE of ZnSe Using DMZn and DMSe as Reactants" Journal of Crystal Growth. 107. 653-658 (1991)

[Publications] T.Okamoto: "Effects of Substrate Materials and Their Properties on Photoassisted Metalorganic Vapor Phase Epitaxy of ZnSe" Japanese Journal of Applied Physics. 30(2A). L156-L159 (1991)

[Publications] S.Yamaga: "Epitaxial ZnS MπS Blue Light Emitting Diode Fabricated on n-GaAs by Low-Pressure Metalorganic Vapor Phase Epitaxy" Japanese Journal of Applied Physics. 30(3). 437-441 (1991)

[Publications] A.Yoshikawa: "Effects of Substrate Materials on Ar Lon Laser-Assisted MOVPE of ZnSe Using DMZn and DMSe as Reactants" MRS Symposium Proceedings on Heteroepitaxy of Dissimilar Materials. 221. 117-122 (1991)

[Publications] A.Yoshikawa: "Ar Ion Laser Irradiation Effects on the MOVPE Growth of ZnSe Using Dimethylzinc and Hydrogen Selenide as Reactants" Journal of Crystal Growth. 115. 274-278 (1991)

[Publications] S.Yamaga: "Dependence of Electrical and Optical Properties of Iodine-Doped Cubic ZnCdS Films on Solid Compositions" Journal of Crystal Growth.

[Publications] S.Yamaga: "Atomic Layer Epitaxy of ZnS by a New Gas Supplying System in Low-Pressure Metalorganic Vapor Phase Epitaxy" Journal of Crystal Growth.

[Publications] A.Yoshikawa: "On the Mechanism of Growth-Rate Enhancement by Photocatalysis in Metalorganic Vapor Phase Epitaxy of ZnSe" Journal of Crystal Growth.

[Publications] S.Matsumoto: "New Surface Passivation Method for GaAs and Its Effect on the Initial Growth Stage of Heteroepitaxial ZnSe Layer" Applied Surface Science.

[Publications] C.Kaneta: "Atomic Configuration and Its Stability of Cabon-Oxygen Complex in Silicon" Proceedings of 20th International Conference on the Physics of Semiconductors. 638-642 (1991)

[Publications] T.Sasaki: "Electronic Structure and Stability of an Impurity Atom of Li in ZnSe" Proceedings of 20th International Conference on the Physics of Semiconductors. 561-565 (1991)

[Publications] T.Sasaki: "Li Impurity in ZnSe:Electronic Structure and the Stability of the Acceptor" Physical Review. B43. 9362-9366 (1991)

[Publications] H.Katayama-Yoshida: "On the Mechanism of the High-Tc Superconductors" Chemistry Today. 244. 18-24 (1991)

[Publications] H.Katayama-Yoshida: "Phonon Anomalies in High-Temperature Superconductors" Butsuri. 46. 785-789 (1991)

[Publications] H.Katayama-Yoshida: "Electronic Structure of Positive Muon in Semiconductors" Special Issue of Muon Spin Rotation Solid State Physics. 26. 837-843 (1991)

[Publications] T.Sasaki: "Self-compensation Mechanism in II-VI Semiconductors" Optoelectronics-Devices and Technologies.

[Publications] C.Kaneta: "Stabilizing Mechanism and Impurity Vibrations of the Carbon-Oxygen Complexes in Crystalline Silicon" Physical Review B.

[Publications] T.Sasaki: "Electronic Structure Calculation for Materials Design" Proceedings of International Conference on Computer Application to Material Science and Engineering. CAMSE90. 169-177 (1991)

[Publications] H.Kaayama-Yoshida: "Hyperfineand Superhyperfine Interacion Parameters of Interstitial 3d Transition Atom Impurities in Semiconductors" the Springer Series in Solid State Science.

[Publications] H.Kobayashi: "Multicolor Thin Film Electroluminescence Device" Proceeding of the 4th Asia Pacific Physics Conference. 2. 1012-1017 (1991)

[Publications] S.Tanaka: "Photo-Induced Transferred Charge in Rare-Earth-Doped Alkaline-Earth Sulfide Electroluminescent Thin Films" Japanese Journal of Applied Physics. 30(6A). L1021-L1024 (1991)

[Publications] S.Tanaka: "Luminescence Improvement of Blue-and White-Emitting SrS TFEL Devices by Annealing in Ar-S Atmosphere" Record of the International Display Research Conference. 137-140 (1991)

[Publications] S.Tanaka: "Excitation Mechnism of Tm^3 Centers in ZnS Electroluminescent Thin-Films" Journal of Crystal Growth.

[Publications] K.Ohmi: "(Y_2O_2S:Tb/ZnS)_n Multi-Layer Thin-Film Electroluminescent Devices Prepared by Multi-Source Deposition Method" Jpaanese Journal of Applied Physics.

[Publications] K.Shimomura: "Semiconductor Intersentional Optical Switch Using Positive Index Variation" Transctions on IEICE. E74(2). 378-383 (1991)

[Publications] M.Kohtoku: "Switching Operation in GaInAs/InP MQW Intergrated-Twin-Guide(ITG) Optical Switch" IEEE Photon.Tech.Letters. 3(3). 225-226 (1991)

[Publications] Y.Miyako: "Room Temperature Operation of GaInAs/GaInAsP/InP SCH Multi-Quantum-Film Laser with Narrow Wire-Like Active Region" IEEE Photon.Tech.Letters. 3(3). 191-192 (1991)

[Publications] K.G.Ravikumar: "Field Induced Refractive Index Variation Spectrum in GaInAs/InP Quantum Wire Structure" Applied Physics Letters. 58(10). 1015-1017 (1991)

[Publications] Y.Miyamoto: "Improvement of Regrown Interface in InP Organo-metallic Vapor Phase Epitaxy" Japanese Journal Applied Physics. 30(4B). L672-L674 (1991)

[Publications] T.Aizawa: "Observation of Field-Induced Refractive Index Variation in Quantum Box Structure" IEEE Photo.Tech.Letters. 3(10). 907-909 (1991)

[Publications] Y.Suzaki: "Enhancement of Electric Field-Induced Refractive Index Variation in a (GaInAsP)(InAs)/InP Asymmetric Multiple Quantum Film (MQF) Structure" IEEE Photon.Tech.Letters. 3(12). 1110-1112 (1991)

[Publications] K.Shimomura: "Operational Wavelength Range of GaInAs(P)/InP Intersectional Optical Switches Using Field-Induced Electro-optic Effect in Low-Dimensional Quantum-Well Structure" IEEE Journal of Quantum Electron.

[Publications] K.Shimomura: "Low Drive Voltage Intersectional Waveguide Optical Switch Using GaInAs/InP MQW Structure" IEEE Photon.Techn.Letters.

[Publications] A.Yoshikawa: "WIDEGAP II-VI COMPOUNDS FOR OPTO-ELECTRONIC APPLICATIONS "MOMBE Growth and Properties of Widegap II-VI Compounds"" Chapman and Hall Ltd.,

[Publications] 山賀 重來: "CVDハンドブック(小宮山 宏他編)3.3ワイドギャップIIーVI族化合物半導体のMOCVD" 朝倉書店, 20 (1991)

吉川明彦千葉大学, 工学部, 教授 (20016603)

[Publications] 山賀重來: "CVDハンドブック(小宮山宏他編)3.3ワイドギャップIIーVI族化合物半導体のMOCVD" 朝倉書店, 20 (1991)