1991 Fiscal Year Annual Research Report

金属ー半道体積層界面の基礎

Research Project

Project/Area Number	03216103
Research Institution	Osaka University
Principal Investigator	平木昭夫大阪大学, 工学部, 教授 (50029013)
Co-Investigator(Kenkyū-buntansha)	中島尚男大阪大学, 産業科学研究所, 教授 (20198071) 白藤純嗣大阪大学, 工学部, 教授 (70029065) 寺倉清之東京大学, 物性研究所, 教授 (40028212) 金原粲東京大学, 工学部, 教授 (90010719) 長谷川英機北海道大学, 工学部, 教授 (60001781)
Keywords	金属ー半導体界面 / 積層薄膜構造 / 界面反応 / ショットキ-障壁 / シリコン / 化合物半導体
Research Abstract	準ミクロおよび原子サイズでの、金属ー半導体界面現象を正確・精密に把握するために、実験と理論とを複合的・相補的に結合し研究を遂行することにより、以下のような成果を得た。(1)結晶シリコンと種々の金属との反応過程を詳細に調べるため、高速イオン散乱・チャネリング法、種々の電子分光法、電子顕微鏡法・回折法や赤外光全反射減衰法等を駆使することにより、結晶原子位置や電子状態の変化や原子拡散等の精密な測定を行った結果、金属の蒸着法により界面の安定性が異なることが判明した。また、準整合界面に対する詳細な構造の知見を得、準ミクロ的にLaB_6ーシリコン界面の接合状態を明らかにした。(2)理論グル-プは、第一原理分子動力学法に基づいた、金属ーシリコン界面の電子状態を計算し、安定な界面構造を推定するためのプログラム開発を行い、シリコン上のアルカリ金属の場合に適用した。また、局所密度汎関数法に基づいた計算により、銀ーシリコン系に対するトンネル顕微鏡像の理論的検討を行った。(3)化合物半導体に対しては、GaAs、InGaAsやInP等と金属との界面反応過程を、(1)と同様な方法およびCーV・IーV法で解析・評価し、安定な界面形成に関する知見を得た。また、ショットキ-障壁の形成機構や物性を調べ、金属ー化合物半導体界面に挿入したシリコン薄膜の効果を明らかにした。また、水素やフォスフィンのプラズマ処理による化合物半導体の表面改質効果とショットキ-障壁高さに与える影響を明らかにした。(4)走査トンネル電子顕微鏡法により、水素終端したシリコン表面構造の解析を行い、金属ー半導体の界面評価への応用を目指した基礎研究を行った。また、トンネル分光法により、酸化物超伝導体ー接合電極系を評価し、その電子状態に関する知見を得た。

Research Products

(36 results)

All Other

All Publications (36 results)

[Publications] 神谷栄二: "埋もれたシリコン界面の高速イオン散乱法による評価" 電子情報通信学会技術報告. 91(363号). 29-34 (1991)
[Publications] Y.Mori: "Properties of metal/diamond interfaces and effects of oxygen adsorbed onto diamond surface" Appl.Phys.Lett.58. 940-941 (1991)
[Publications] J.Moon: "High-Energy Ion-Induced Damages at Metal-Silicon Interfaces during Channeling Measurements" Appl.Surf.Sci.(1992)
[Publications] T.Ito: "Non-destructive and Quantitative Analysis of Buried Interfaces of Si-Related Crystalline Multilayers Using High-Energy Ion Scattering" Appl.Surf.Sci.(1992)
[Publications] E.Kamiya: "Characterization of Si Interfaces by High Energy Ion Scattering" 電子情報通信学会誌. (1992)
[Publications] Y.Mori: "Characterization of Metal/CVD Diamond Interface Formation" Appl.Surf.Sci.(1992)
[Publications] A.Hiraki: "Recent Developments on Metal-Silicon Interfaces" Appl.Surf.Sci.(1992)
[Publications] T.Sugino: "Hydrogenation of InP by Phosphine Plasma" Japanese J.Appl.Phys.30. L948-L951 (1991)
[Publications] T.Sugino: "Effects of Phosphine-Plasma Treatment on Characteristics of Au/n-InP Schottky Junctions" Japanese J.Appl.Phys.30. L1439-L1442 (1991)
[Publications] A.Uda: "Effect of Photodecomposed-PH_3 Treatment of PN/InP Metal-Insulator-Semiconductor diodes" Electronics Letters. 27. 2315-2316 (1991)
[Publications] T.Sugino: "Characteristics of Au/n-InP Schottky Junctions Formed on H_2-and PH_3-Plasma Treated Surfaces" J.Electronic Materials. 20. 1001-1006 (1991)
[Publications] T.Sugino: "Ultraviolet Laser-Assisted Surface Treatment of InP with phosphine Gas" J.Electronic Materials. 21. 99-104 (1992)
[Publications] T.Sugino: "Creation and Passivation of Electron Traps in n-InP Treated with Hydrogen Plasma" Appl.Phys.Lett.(1992)
[Publications] 奥山雅則: "Infrared Characterization fo SiO_2 Ultra Thin Film by Grazing Internal Reflection" Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials. 574-576 (1991)
[Publications] 泉谷淳子: "Grazing Internal Reflection法によるSiO_2超薄膜の高感度赤外分光" 電子情報通信学会技術研究報告. 91. 75-80 (1991)
[Publications] 松井裕一: "High Sensitivity Infrared Characterization of Ultra Thin SiO_2 Film by Grazing Internal Reflection Method" Japanese Journal of Appled Physicsに掲載予定.
[Publications] 長谷川繁彦: "低速電子透過分光法" 応用物理. 61. 169-170 (1992)
[Publications] S.Hasegawa: "Study of Al/Si(111)(√3×√3)ーAl interfaces by lowーenergy electron transmission and diffraction" 発表予定.
[Publications] 長谷川英機: "化合物半導体ショットキ-障壁の形成機構" 応用物理. 60. 1214-1222 (1991)
[Publications] H.Hasegawa: "Formation mechanism of Schottky barrier on MBE grown GaAs surfaces subjected to various treatments" Presented at ICFSI-3(Rome,May 1991).
[Publications] H.Tomozawa: "Interface States at Lattice-Matched and Pseudomorphic Hetero-Structures" Appl.Surf.Sci. (1992)
[Publications] H.Fujikura: "Atomic-Scale Control of Surface Fermi Level Pinning by Ultrathin Si MBE Layers for InGaAs Quantum Structures" Appl.Sur.Sci.(1992)
[Publications] M.Akazawa: "Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semiconductor Interfaces by Ultrathin MBE Si Layers" Jpn.J.Appl.Phys.30. 3744-3749 (1991)
[Publications] 渡辺聡: "Theoretical Calculations of Electronic Structure and STM Image of the Si(111)√<3>×√<3>ーAg surface" STM Physical Review B. 44. 8330-8333 (1991)
[Publications] 塚田捷: "Connectecd Vacuum Tail Method and Its Application to STM" Surface Science.
[Publications] 小林功桂: "Theory of STM image of Monolayer Graphite on Transition Metal Surface" Applied Surface Science.
[Publications] K.Kobayashi: "Atomic arrangement of alkali adatoms on the Si(001)-2×1 surface" Surf.Sci.242. 349-353 (1991)
[Publications] T.Mohri: "First-Prinsiples Study of Short Range Order and Instabilities in Au-Cu,Au-Ag and Au-Pd Alloys" Acta Metall.Mater.39. 493-501 (1991)
[Publications] Y.Morikawa: "Theoretical support to the double-layer model for potassium adsorption on the Si(001) surface" Phys.Rev.B. 44. 3459-3462 (1991)
[Publications] M.Ikeda: "Alternating Change of Allowed and Forbidden Optical Transition in Si_<2m>/Ge_<10-2m> Superlattices with (001) Stacking" Phys.Rev.B. 45. 1496-1499 (1992)
[Publications] K.Kobayashi: "Optimized Structures and Electronic Properties of Alkali Metal (Na,K) Adsorbed Si(001) Surfaces" Phys.Rev.B 2月15日号. 45. (1992)
[Publications] 木村嘉伸: "Freezing of the 2×1 Structure at Commensurate Ag(100)-Si(100) Interface" Surface Science.
[Publications] 木村嘉伸: "Incommensurate Phase of Sn/Sx(100) Studied by HRーREM" Surface Science.
[Publications] 柴田晃秀: "Si(111) √<3>×√<3>-Au Growing on 7×7 Surface" Surface Sci.
[Publications] Yonezawa,F: "Glass Transition and Relaxation of Disorded Systems" Solid State Physics(eds.H.Ehrenreich & D.Turnbull). 145. 178-254 (1991)
[Publications] R.Aoki: "The Physics and Chemistry of Oxide Superconductors ed.by Y.Iye and H.Yasuoka" Springer-Verlag,

1991 Fiscal Year Annual Research Report

金属ー半道体積層界面の基礎

Principal Investigator

平木 昭夫 大阪大学, 工学部, 教授 (50029013)

Research Products

[Publications] 神谷 栄二: "埋もれたシリコン界面の高速イオン散乱法による評価" 電子情報通信学会技術報告. 91(363号). 29-34 (1991)

[Publications] Y.Mori: "Properties of metal/diamond interfaces and effects of oxygen adsorbed onto diamond surface" Appl.Phys.Lett.58. 940-941 (1991)

[Publications] J.Moon: "High-Energy Ion-Induced Damages at Metal-Silicon Interfaces during Channeling Measurements" Appl.Surf.Sci.(1992)

[Publications] T.Ito: "Non-destructive and Quantitative Analysis of Buried Interfaces of Si-Related Crystalline Multilayers Using High-Energy Ion Scattering" Appl.Surf.Sci.(1992)

[Publications] E.Kamiya: "Characterization of Si Interfaces by High Energy Ion Scattering" 電子情報通信学会誌. (1992)

[Publications] Y.Mori: "Characterization of Metal/CVD Diamond Interface Formation" Appl.Surf.Sci.(1992)

[Publications] A.Hiraki: "Recent Developments on Metal-Silicon Interfaces" Appl.Surf.Sci.(1992)

[Publications] T.Sugino: "Hydrogenation of InP by Phosphine Plasma" Japanese J.Appl.Phys.30. L948-L951 (1991)

[Publications] T.Sugino: "Effects of Phosphine-Plasma Treatment on Characteristics of Au/n-InP Schottky Junctions" Japanese J.Appl.Phys.30. L1439-L1442 (1991)

[Publications] A.Uda: "Effect of Photodecomposed-PH_3 Treatment of PN/InP Metal-Insulator-Semiconductor diodes" Electronics Letters. 27. 2315-2316 (1991)

[Publications] T.Sugino: "Characteristics of Au/n-InP Schottky Junctions Formed on H_2-and PH_3-Plasma Treated Surfaces" J.Electronic Materials. 20. 1001-1006 (1991)

[Publications] T.Sugino: "Ultraviolet Laser-Assisted Surface Treatment of InP with phosphine Gas" J.Electronic Materials. 21. 99-104 (1992)

[Publications] T.Sugino: "Creation and Passivation of Electron Traps in n-InP Treated with Hydrogen Plasma" Appl.Phys.Lett.(1992)

[Publications] 奥山 雅則: "Infrared Characterization fo SiO_2 Ultra Thin Film by Grazing Internal Reflection" Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials. 574-576 (1991)

[Publications] 泉谷 淳子: "Grazing Internal Reflection法によるSiO_2超薄膜の高感度赤外分光" 電子情報通信学会技術研究報告. 91. 75-80 (1991)

[Publications] 松井 裕一: "High Sensitivity Infrared Characterization of Ultra Thin SiO_2 Film by Grazing Internal Reflection Method" Japanese Journal of Appled Physicsに掲載予定.

[Publications] 長谷川 繁彦: "低速電子透過分光法" 応用物理. 61. 169-170 (1992)

[Publications] S.Hasegawa: "Study of Al/Si(111)(√3×√3)ーAl interfaces by lowーenergy electron transmission and diffraction" 発表予定.

[Publications] 長谷川 英機: "化合物半導体ショットキ-障壁の形成機構" 応用物理. 60. 1214-1222 (1991)

[Publications] H.Hasegawa: "Formation mechanism of Schottky barrier on MBE grown GaAs surfaces subjected to various treatments" Presented at ICFSI-3(Rome,May 1991).

[Publications] H.Tomozawa: "Interface States at Lattice-Matched and Pseudomorphic Hetero-Structures" Appl.Surf.Sci. (1992)

[Publications] H.Fujikura: "Atomic-Scale Control of Surface Fermi Level Pinning by Ultrathin Si MBE Layers for InGaAs Quantum Structures" Appl.Sur.Sci.(1992)

[Publications] M.Akazawa: "Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semiconductor Interfaces by Ultrathin MBE Si Layers" Jpn.J.Appl.Phys.30. 3744-3749 (1991)

[Publications] 渡辺 聡: "Theoretical Calculations of Electronic Structure and STM Image of the Si(111)√<3>×√<3>ーAg surface" STM Physical Review B. 44. 8330-8333 (1991)

[Publications] 塚田 捷: "Connectecd Vacuum Tail Method and Its Application to STM" Surface Science.

[Publications] 小林 功桂: "Theory of STM image of Monolayer Graphite on Transition Metal Surface" Applied Surface Science.

[Publications] K.Kobayashi: "Atomic arrangement of alkali adatoms on the Si(001)-2×1 surface" Surf.Sci.242. 349-353 (1991)

[Publications] T.Mohri: "First-Prinsiples Study of Short Range Order and Instabilities in Au-Cu,Au-Ag and Au-Pd Alloys" Acta Metall.Mater.39. 493-501 (1991)

[Publications] Y.Morikawa: "Theoretical support to the double-layer model for potassium adsorption on the Si(001) surface" Phys.Rev.B. 44. 3459-3462 (1991)

[Publications] M.Ikeda: "Alternating Change of Allowed and Forbidden Optical Transition in Si_<2m>/Ge_<10-2m> Superlattices with (001) Stacking" Phys.Rev.B. 45. 1496-1499 (1992)

[Publications] K.Kobayashi: "Optimized Structures and Electronic Properties of Alkali Metal (Na,K) Adsorbed Si(001) Surfaces" Phys.Rev.B 2月15日号. 45. (1992)

[Publications] 木村 嘉伸: "Freezing of the 2×1 Structure at Commensurate Ag(100)-Si(100) Interface" Surface Science.

[Publications] 木村 嘉伸: "Incommensurate Phase of Sn/Sx(100) Studied by HRーREM" Surface Science.

[Publications] 柴田 晃秀: "Si(111) √<3>×√<3>-Au Growing on 7×7 Surface" Surface Sci.

[Publications] Yonezawa,F: "Glass Transition and Relaxation of Disorded Systems" Solid State Physics(eds.H.Ehrenreich & D.Turnbull). 145. 178-254 (1991)

[Publications] R.Aoki: "The Physics and Chemistry of Oxide Superconductors ed.by Y.Iye and H.Yasuoka" Springer-Verlag,

平木昭夫大阪大学, 工学部, 教授 (50029013)

[Publications] 神谷栄二: "埋もれたシリコン界面の高速イオン散乱法による評価" 電子情報通信学会技術報告. 91(363号). 29-34 (1991)

[Publications] 奥山雅則: "Infrared Characterization fo SiO_2 Ultra Thin Film by Grazing Internal Reflection" Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials. 574-576 (1991)

[Publications] 泉谷淳子: "Grazing Internal Reflection法によるSiO_2超薄膜の高感度赤外分光" 電子情報通信学会技術研究報告. 91. 75-80 (1991)

[Publications] 松井裕一: "High Sensitivity Infrared Characterization of Ultra Thin SiO_2 Film by Grazing Internal Reflection Method" Japanese Journal of Appled Physicsに掲載予定.

[Publications] 長谷川繁彦: "低速電子透過分光法" 応用物理. 61. 169-170 (1992)

[Publications] 長谷川英機: "化合物半導体ショットキ-障壁の形成機構" 応用物理. 60. 1214-1222 (1991)

[Publications] 渡辺聡: "Theoretical Calculations of Electronic Structure and STM Image of the Si(111)√<3>×√<3>ーAg surface" STM Physical Review B. 44. 8330-8333 (1991)

[Publications] 塚田捷: "Connectecd Vacuum Tail Method and Its Application to STM" Surface Science.

[Publications] 小林功桂: "Theory of STM image of Monolayer Graphite on Transition Metal Surface" Applied Surface Science.

[Publications] 木村嘉伸: "Freezing of the 2×1 Structure at Commensurate Ag(100)-Si(100) Interface" Surface Science.

[Publications] 木村嘉伸: "Incommensurate Phase of Sn/Sx(100) Studied by HRーREM" Surface Science.

[Publications] 柴田晃秀: "Si(111) √<3>×√<3>-Au Growing on 7×7 Surface" Surface Sci.