1991 Fiscal Year Annual Research Report

界面反応の物理・化学

Research Project

Project/Area Number	03216106
Research Institution	Waseda University
Principal Investigator	大泊巌早稲田大学, 理工学部, 教授 (30063720)
Co-Investigator(Kenkyū-buntansha)	津田穣千葉大学, 薬学部, 教授 (90009506) 山田公京都大学, 工学部, 教授 (00026048) 大坂敏明早稲田大学, 理工学部, 教授 (50112991) 川原田洋早稲田大学, 理工学部, 助教授 (90161380) 原史朗理化学研究所, 研究員 (60218617)
Keywords	コンタクト抵抗率 / コンタクト構造の安定性 / ショットキ-障壁高さ / 界面介在物 / 熱力学的安定性 / 速度論的安定性 / 界面構造のダイナミクス / 応力の影響
Research Abstract	「界面反応の物理・化学」という視点から、「コンタクト抵抗の低減」および「コンタクト構造の安定性」という問題に対処するべく、ショットキ-障壁高さ(SBH)の低減、界面介在物の除去、熱力学的ならびに速度論的安定性、界面構造のダイナミクスというより具体的なテ-マについて各分担者が研究を進めてきた。SBHに関しては、弾道電子放射顕微鏡(BEEM)による測定を国内で初めて実現した。またエレクトロマイグレ-ションによる半導体界面の形成法を提案し、実際に電子ビ-ムによる原子層の描画を可能にした。さらに量子化学的理論計算を用いて、界面の局所的な電荷分布がSBHに与える影響について検討した。界面介在物の除去の限界に対する考察に関連して、Si(111)ー7X7構造の形成は酸素原子の存在が本質的な要因であるという仮説を提案した。コンタクト構造の熱力学的安定性に関して、応力や電界が拡散や界面反応を促進させるか否かは、反応物質に依存することを明確にした。またCu/Si界面組成がSi基板の面方位によって異なることが判った。Si基板の面方位について、A1をエピ成長させた時のSBHや界面の熱的安定性について調べた。GaAs用オ-ミックコンタクト材に含まれるAuは構造不安定化の主因ではないことを示した。また化学量論的な金属間化合物膜を用いて平衡界面を達成したコンタクト構造は極めて高安定であることを実証した。さらにIn/αーSn系においてInの蒸着量に伴う不整合相の特異的な生成・消滅を観察した。速度論的安定性に関して、AuおよびSi基板上に単原子吸着したTMGの熱または光による分解過程をUPSを用いて調べた。また弾性歪エネルギ-、界面エネルギ-が薄膜の構造組成に与える影響を定量的に評価し、その緩和機構を検討した。界面構造のダイナミクスに関しては、拡散と弾性場が相互作用する場合について、非平衡熱力学の一般的関係から現象論的発展方程式を導くことに成功した。

Research Products

(39 results)

All Other

All Publications (39 results)

[Publications] T.Ueno: "Atomic scale structure of microtwins in single crystal Si grown by lateral solid phase epitaxy" J. Appl. Phys.808-811 (1991)
[Publications] T. Ueno: "Quasi inーsitu observation of Si lateral solid phase epitaxy" Appl. Surf. Sci.
[Publications] T.Ueno: "Analysis of atomic scale structure of microtwins in LーSPE Si by modeling" Jpn. J. Appl. Phys.
[Publications] H.Kawarada: "Free exciton and bound exciton reconbination radiation in undoped and boron‐doped CVD diamond" Proc. 2nd Int. Sym. Diamond Materials. 1991ー8. 420-426 (1991)
[Publications] T.Osaka: "Epitaxy on InSb substrate I〈αーSn on InSb(111)〉" Proc. 4th topical meeting on crystal groth mechanism. 83-86 (1991)
[Publications] T.Osaka: "Sb trimer structure of the InSb(111)Bー(2x2)surface as determined by transmission electron diffraction" Phys. Rev. Lett.67. 2834-2837 (1991)
[Publications] T.Osaka: "Surface phase transition in αーSn film stabilized by InSb(111)substrates" Phys. Rev.
[Publications] T.Osaka: "Polarity controlled superlattice in an αーSn/InSb(111)system" Phys. Rev.
[Publications] J.Echigoya: "Thin film reaction and interface structure of Cu on Si" Appl. Surface Sci.
[Publications] M.Nakamura: "Spin Depolarization of a Quantum Particle;Fermionic Path Intergral Approach" J. Phys. Soc. Japan. 60. 1388-1397 (1991)
[Publications] K.Kitahara: "Hole Dynamics of OneーDimensional Plasma" Some Problems on the Theory of Dynamical Systems in Applied Sciences. (1991)
[Publications] K.Kitahara: "FokkerーPlank Equation for Hydrodynamic Fluctuations" Noise in Physical Systems and 1/f Fluctuations. (1991)
[Publications] K.Kitahara: "Approximate Solutions for a Dynamical Model of Chemisorption" Prog. Theor. Phys. Suppl.106. 361-368 (1991)
[Publications] 北原和夫: "固体水素中のミュオンスピン緩和" 固体物理. 26. 843-846 (1991)
[Publications] M.Tsuda: "Structure of Si(001)surface I.The origin of the buckling in the dimer formation on reconstructed surfaces" Phys. Rev.B44. 11241-11247 (1991)
[Publications] T.Hoshino: "Structure of Si(001)surface II.The electronic structure of the symmetric dimer in the ground state" Phys. Rev.B44. 11248-11252 (1991)
[Publications] I. Yamada: "Ionized Cluster Beam Deposition and Epitaxy of Metal Films on Large Misfit Substrates" Physica Scripta. T35. 245-250 (1991)
[Publications] I.Yamada: "Recent Progress in Depositing Epitaxial Metal Films by an lonized Cluster Beam" Nuclear Instruments and Method in Physics Research B. 55. 544-549 (1991)
[Publications] I.Yamada: "New Horizons in Materials Processing with ICB" Proc. of 14th Sym. on Ion Sources and IonーAssited Technology. 227-235 (1991)
[Publications] I.Yamada: "Preparation of Atomically Flat Gold Films by Ionized Cluster Beam" Nuclear Instruments and Methods in Physics Research B. 55. 876-879 (1991)
[Publications] I.Yamada: "XーRay Characteristics of Atomically Flat Gold Films Deposited by ICB" Nuclear Instruments and Methods in Physics Research B. 59/60. 216-218 (1991)
[Publications] I.Yamada: "LargeーMisfit Heteroepitaxy of Aluminum Films by ICB Deposition" Nuclear Instruments and Methods in Physics Research B. 59/60. 302-307 (1991)
[Publications] I.Yamada: "Thin Film Depostion and Growth Processes by Ionized Cluster Beams" Materials Research Society Symposium Proceeding. 206. 383-390 (1991)
[Publications] I.Yamada: "STM Analysis of Initial Stages of ICB Deposition Comparison between ICB and MBE" Proc. of 14th Sym. on lon Sources and IonーAssisted Technology. 237-240 (1991)
[Publications] M.Adachi: "Optical Characteristics of HighーPower EXcimer Laser Mirrors of SingleーCrystal Aluminum Film with High Reflectance and Durability" Nuclear Instruments and Methods in Physics Research B. 59/60. 940-942 (1991)
[Publications] K.Fukushima: "Epitaxial Growth of TiO_2 Films on Sapphire Substrates by ICB Method" Proc. of 14th Sym. on Ion Sources and IonーAssisted Technology. 259-262 (1991)
[Publications] Rand L. McEachern: "An Investigation of Cluster Formation in an lonized Cluster Beam Deposition Source" J. Vac. Sci. Technol.A9. 3105-3112 (1991)
[Publications] M.Kawasaki: "Laser Photodissociation of organometallic compounds on a cryosubstrate" Applied Organometallic Chemistry. 5. 247-255 (1991)
[Publications] S.Shogen: "Photodissociation of trimethylindium on Si(111)at 193 nm" Thin Solid Film. (1992)
[Publications] N.Fujimura: "Influence of External Stress for Nonーequilibrium Thin Filmes" Trans. Mat. Res. Soc. Jpn. 205-210 (1990)
[Publications] A.Noya: "Auger Electron Spectroscopy Study on the Characterization and Stability of the Cu_9A1_4/TiN/Si system" Jpn. J. Appl. Phys.30. L1760-L1763 (1991)
[Publications] 武山真弓: "SiーLSIメタライゼ-ションのへAl_<12>W金属間化合物膜の適用" 電子情報通信学会技術研究報告. CPM91. 79-84 (1991)
[Publications] 野矢厚: "Cu_9Al_4/Siコンタクト系におけるバリア材料の検討" 電子情報通信学会技術研究報告. CPM91. 85-89 (1991)
[Publications] H.Yasunaga: "Driving Force of Electromigration on Semiconductor Surfaces for Ag/Si(111)" Jpn. J. Appl. Phys.30. 1822 (1991)
[Publications] H.Yasunaga: "Formation of Semiconductor interfaces by surface electronmigration" Appl. Surf. Sci.
[Publications] 杉田元宣,北原和夫: "核形成のダイナミクス(訳)原著:M.Volmer"Kinetik der Phasenbildung"" 学会出版センタ-, (1992)
[Publications] I.Yamada: "Low Temperature Epitaxial Growth of Semiconductor" World Scientific, 343 (1991)
[Publications] 川崎昌博: "化学総説「表面励起プロセスの化学」表面吸着種の光分解(p30〜39)" 学会出版センタ-, 184 (1991)
[Publications] 安永均: "半導体工学" 近代科学社, 269 (1991)

1991 Fiscal Year Annual Research Report

界面反応の物理・化学

Principal Investigator

大泊 巌 早稲田大学, 理工学部, 教授 (30063720)

Research Products

[Publications] T.Ueno: "Atomic scale structure of microtwins in single crystal Si grown by lateral solid phase epitaxy" J. Appl. Phys.808-811 (1991)

[Publications] T. Ueno: "Quasi inーsitu observation of Si lateral solid phase epitaxy" Appl. Surf. Sci.

[Publications] T.Ueno: "Analysis of atomic scale structure of microtwins in LーSPE Si by modeling" Jpn. J. Appl. Phys.

[Publications] H.Kawarada: "Free exciton and bound exciton reconbination radiation in undoped and boron‐doped CVD diamond" Proc. 2nd Int. Sym. Diamond Materials. 1991ー8. 420-426 (1991)

[Publications] T.Osaka: "Epitaxy on InSb substrate I〈αーSn on InSb(111)〉" Proc. 4th topical meeting on crystal groth mechanism. 83-86 (1991)

[Publications] T.Osaka: "Sb trimer structure of the InSb(111)Bー(2x2)surface as determined by transmission electron diffraction" Phys. Rev. Lett.67. 2834-2837 (1991)

[Publications] T.Osaka: "Surface phase transition in αーSn film stabilized by InSb(111)substrates" Phys. Rev.

[Publications] T.Osaka: "Polarity controlled superlattice in an αーSn/InSb(111)system" Phys. Rev.

[Publications] J.Echigoya: "Thin film reaction and interface structure of Cu on Si" Appl. Surface Sci.

[Publications] M.Nakamura: "Spin Depolarization of a Quantum Particle;Fermionic Path Intergral Approach" J. Phys. Soc. Japan. 60. 1388-1397 (1991)

[Publications] K.Kitahara: "Hole Dynamics of OneーDimensional Plasma" Some Problems on the Theory of Dynamical Systems in Applied Sciences. (1991)

[Publications] K.Kitahara: "FokkerーPlank Equation for Hydrodynamic Fluctuations" Noise in Physical Systems and 1/f Fluctuations. (1991)

[Publications] K.Kitahara: "Approximate Solutions for a Dynamical Model of Chemisorption" Prog. Theor. Phys. Suppl.106. 361-368 (1991)

[Publications] 北原 和夫: "固体水素中のミュオンスピン緩和" 固体物理. 26. 843-846 (1991)

[Publications] M.Tsuda: "Structure of Si(001)surface I.The origin of the buckling in the dimer formation on reconstructed surfaces" Phys. Rev.B44. 11241-11247 (1991)

[Publications] T.Hoshino: "Structure of Si(001)surface II.The electronic structure of the symmetric dimer in the ground state" Phys. Rev.B44. 11248-11252 (1991)

[Publications] I. Yamada: "Ionized Cluster Beam Deposition and Epitaxy of Metal Films on Large Misfit Substrates" Physica Scripta. T35. 245-250 (1991)

[Publications] I.Yamada: "Recent Progress in Depositing Epitaxial Metal Films by an lonized Cluster Beam" Nuclear Instruments and Method in Physics Research B. 55. 544-549 (1991)

[Publications] I.Yamada: "New Horizons in Materials Processing with ICB" Proc. of 14th Sym. on Ion Sources and IonーAssited Technology. 227-235 (1991)

[Publications] I.Yamada: "Preparation of Atomically Flat Gold Films by Ionized Cluster Beam" Nuclear Instruments and Methods in Physics Research B. 55. 876-879 (1991)

[Publications] I.Yamada: "XーRay Characteristics of Atomically Flat Gold Films Deposited by ICB" Nuclear Instruments and Methods in Physics Research B. 59/60. 216-218 (1991)

[Publications] I.Yamada: "LargeーMisfit Heteroepitaxy of Aluminum Films by ICB Deposition" Nuclear Instruments and Methods in Physics Research B. 59/60. 302-307 (1991)

[Publications] I.Yamada: "Thin Film Depostion and Growth Processes by Ionized Cluster Beams" Materials Research Society Symposium Proceeding. 206. 383-390 (1991)

[Publications] I.Yamada: "STM Analysis of Initial Stages of ICB Deposition Comparison between ICB and MBE" Proc. of 14th Sym. on lon Sources and IonーAssisted Technology. 237-240 (1991)

[Publications] M.Adachi: "Optical Characteristics of HighーPower EXcimer Laser Mirrors of SingleーCrystal Aluminum Film with High Reflectance and Durability" Nuclear Instruments and Methods in Physics Research B. 59/60. 940-942 (1991)

[Publications] K.Fukushima: "Epitaxial Growth of TiO_2 Films on Sapphire Substrates by ICB Method" Proc. of 14th Sym. on Ion Sources and IonーAssisted Technology. 259-262 (1991)

[Publications] Rand L. McEachern: "An Investigation of Cluster Formation in an lonized Cluster Beam Deposition Source" J. Vac. Sci. Technol.A9. 3105-3112 (1991)

[Publications] M.Kawasaki: "Laser Photodissociation of organometallic compounds on a cryosubstrate" Applied Organometallic Chemistry. 5. 247-255 (1991)

[Publications] S.Shogen: "Photodissociation of trimethylindium on Si(111)at 193 nm" Thin Solid Film. (1992)

[Publications] N.Fujimura: "Influence of External Stress for Nonーequilibrium Thin Filmes" Trans. Mat. Res. Soc. Jpn. 205-210 (1990)

[Publications] A.Noya: "Auger Electron Spectroscopy Study on the Characterization and Stability of the Cu_9A1_4/TiN/Si system" Jpn. J. Appl. Phys.30. L1760-L1763 (1991)

[Publications] 武山 真弓: "SiーLSIメタライゼ-ションのへAl_<12>W金属間化合物膜の適用" 電子情報通信学会技術研究報告. CPM91. 79-84 (1991)

[Publications] 野矢 厚: "Cu_9Al_4/Siコンタクト系におけるバリア材料の検討" 電子情報通信学会技術研究報告. CPM91. 85-89 (1991)

[Publications] H.Yasunaga: "Driving Force of Electromigration on Semiconductor Surfaces for Ag/Si(111)" Jpn. J. Appl. Phys.30. 1822 (1991)

[Publications] H.Yasunaga: "Formation of Semiconductor interfaces by surface electronmigration" Appl. Surf. Sci.

[Publications] 杉田 元宣,北原 和夫: "核形成のダイナミクス(訳)原著:M.Volmer"Kinetik der Phasenbildung"" 学会出版センタ-, (1992)

[Publications] I.Yamada: "Low Temperature Epitaxial Growth of Semiconductor" World Scientific, 343 (1991)

[Publications] 川崎 昌博: "化学総説「表面励起プロセスの化学」表面吸着種の光分解(p30〜39)" 学会出版センタ-, 184 (1991)

[Publications] 安永 均: "半導体工学" 近代科学社, 269 (1991)

大泊巌早稲田大学, 理工学部, 教授 (30063720)

[Publications] 北原和夫: "固体水素中のミュオンスピン緩和" 固体物理. 26. 843-846 (1991)

[Publications] 武山真弓: "SiーLSIメタライゼ-ションのへAl_<12>W金属間化合物膜の適用" 電子情報通信学会技術研究報告. CPM91. 79-84 (1991)

[Publications] 野矢厚: "Cu_9Al_4/Siコンタクト系におけるバリア材料の検討" 電子情報通信学会技術研究報告. CPM91. 85-89 (1991)

[Publications] 杉田元宣,北原和夫: "核形成のダイナミクス(訳)原著:M.Volmer"Kinetik der Phasenbildung"" 学会出版センタ-, (1992)

[Publications] 川崎昌博: "化学総説「表面励起プロセスの化学」表面吸着種の光分解(p30〜39)" 学会出版センタ-, 184 (1991)

[Publications] 安永均: "半導体工学" 近代科学社, 269 (1991)