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1993 Fiscal Year Final Research Report Summary

Selective area growth of compound semiconductors induced by electron-beam irradiation

Research Project

Project/Area Number 03402023
Research Category

Grant-in-Aid for General Scientific Research (A)

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionTokyo Institute of Technology

Principal Investigator

KUKIMOTO Hiroshi  Tokyo Inst.Tech., Fac.Engin., Professor, 工学部, 教授 (50013488)

Co-Investigator(Kenkyū-buntansha) HARA Kazuhiko  Tokyo Inst.Tech., Fac.Engin., Research Associate, 工学部, 助手 (80202266)
Project Period (FY) 1991 – 1993
Keywordsselective area growth / electron beam excitation / compound semiconductors / chemical beam epitaxy / surface modification
Research Abstract

Epitaxy on a specific local area is one of the ultimate goals in crystal growth technology, and is expected to introduce a new dimension for design and fabrication of novel artificial semiconductor structures for physical studies and devices applications. Our approach is to induce difference in growth behavior between the two areas by local modification of substrate with irradiation of an electron beam, without exposure to undesirable ambients, such as air and etching gases.
The growth procedure consists of (i) a 10-keV electron beam irradiation, with electron doses of 10^<17>-10^<19> electrons/cm^2, on specific areas of a GaAs surface at room temperature, (ii) thermal annealing of the substrate at the annealing temperature of 400-640゚C,and (iii) deposition of GaAs by chemical beam epitaxy at the growth temperature of 300-500゚C,using triethylgallium and cracked arsine as source gases. We have found that, for the GaAs deposition at 400゚C or higher, growth rate is significantly enhanced on the irradiated area, yielding a plateau-like GaAs object. Carbon content of the irradiated area is 10^<18>cm^<-3> or less, as estimated from secondary ion mass spectroscopy analysis.13EA03 : On the basis of these results, we have discussed that the observed selectivity arises from the removal of a native oxide layr on the GaAs substrate by the combination of electron beam irradiation and thermal annealing. Selective area epitaxy using AlGaAs oxide mask layrs has also been investigated.

  • Research Products

    (4 results)

All Other

All Publications (4 results)

  • [Publications] Koichi Watanabe: "Inducement of GaAs growth by electron beam irradiation on GaAs covered by native oxide" J.Crystal Growth. (印刷中). (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Morio Hosoya: "Local Area Deposition of GaAs by Chemical Beam Epitaxy Combined with Electron Beam Irradiation" Symposium Record,13th Symposium on Alloy Semiconductor Physics and Electronics. 27-28 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Watanabe, M.Hosoya, K.Hara, J.Yoshino, H.Munekata, and H.Kukimoto: "Inducement of GaAs growth by electron beam irradiation on GaAs covered by native oxide" J.Crystal Growth. (to be published). (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Hosoya, K.Watanabe, K.Hara, J.Yoshino, H.Munekata, and H.Kukimoto: "Local Area Deposition of GaAs by Chemical Beam Epitaxy Combined with Electron Beam Irradiation" Symposium Record, 13th Symposium on Alloy Semiconductor Physics and Electronics. 27-28 (1994)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1996-04-15  

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