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1994 Fiscal Year Final Research Report Summary

Development of atomic-scale materials processing utilizing electron-beam induced selective chemical reaction

Research Project

Project/Area Number 03402024
Research Category

Grant-in-Aid for General Scientific Research (A)

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionTohoku University (1994)
Hiroshima University (1991-1993)

Principal Investigator

YAO Takafumi  Tohoku University, Institute for Materials Research, Professor, 金属材料研究所, 教授 (60230182)

Co-Investigator(Kenkyū-buntansha) YOSHIMURA Masamichi  Hiroshima University, Dept.Elect.Engin, Assoc.Prof., 工学部, 助教授 (40220743)
Project Period (FY) 1991 – 1994
KeywordsSTM / atom / molecule manipulation / selective chemical reaction / semiconductor surface / atom / molecule adsorption / materials processing
Research Abstract

The main results obtained in this project are summarized as follows : (1) The initial stages of the adsorption of Al2Cl6 molecules are elucidated, in which rest atoms play an important role in the adsorption process. An A12C16 molecule decomposes on adsorbtion, resulting in the preferential adsorption of Cl and AlClx molecules onto the center adatom. Based on these findings, the desorptin of adsorbed single Cl atom and AlClx molecule is demonstrated. We succeeded also in the displacemnet of the molecule and the decomposition of the molucule, resulting in the adsorption of an Al atom. (2) Local atomic structures of HF-treated Si (111) surfaces are elucidated using STM.Based on this study, Ga nano dots are deposited onto (C2H5) 3Ga-adsorbed HF-treated Si (111) surfaces by appling a voltage pulse between the tip and the sample surface. The underlying mechansism is the electric-field enhanced decompositin of the adsorbed (C2H5) 3Ga molecule below the tip. (3) Local atomic structures of Al-adsorbed Si (111) surfaces and atomistic processes during Si solid phase epitaxy are elucidated.

  • Research Products

    (50 results)

All Other

All Publications (50 results)

  • [Publications] K.Uesugi: "Nanometer-scale fabrication on graphite surfaces by scanning tunneling microscopy" Ultramicroscopy. 42-44. 1443-1447 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Tomohiro KONISHI: "Characterization of HF-Treated Si Surfaces by Photoluminescence Spectroscopy" JAPANESE JOURNAL OF APPLIED PHYSICS. 31. 1216-1219 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 植杉克弘: "STMによるシリコン表面の構造評価" 電気学会論文誌C. 112. 671-675 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Tomohiro KONISHI: "Characterization of HF-treated Si(111)surfaces" JAPANESE JOURNAL OF APPLIED PHYSICS. 32. 3131-3134 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Katsuhiro Uesugi: "Observation of solid phase epitaxy processes of Arion bombarded Si (001) sutfaces by scanning tunneling microscopy" Applied Physics Letters. 62. 1600-1604 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Masamichi Yoshimura: "Low-coverage,low-temperature phase of Al overlayers on Si (111) α-7x7 structure observed by scanning tunneling microscopy" PHYSICAL REVIEW. B47. 13930-13933 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Katsuhiro UESUGI: "Scanning Tunneling Microscopy Observation of Ar-Ion Bombarded Si (001) Surfaces and Regrowth Processes by Thermal Annealing" JAPANESE JOURNAL OF APPLIED PHYSICS. 32. 6203-6207 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Karsuya Takaoka: "Al-√<3>x√<3> domain structure on Si (111) -7x7 observed by scanning tunneling microscopy" PHYSICAL REVIEW. B48. 5657-5659 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Katsuhiro UESUGI: "Adsorption and Desorption of A1C1_3 on Si (111) -7x7 Observed by Scanning Tunneling Microscopy and Atomic Force Microscopy" JAPANESE JOURNAL OF APPLIED PHYSICS. 32. 6200-6206 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 川見 浩: "走査型トンネル顕微鏡(STM)の試作" 固体物理. 28. 177-182 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Masamichi Yoshimura: "Al induced reconstructions on the Si(111)surfaces studied by scanning tunneling microscopy" Mat.Res.Soc.Symp.Proc.295. 157-160 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Uesugi: "Deposition of nano-scale Ga dots onto HF-treated Si (111) using a scanning tunneling microscope" Mat.Res.Soc.Symp.Proc.279. 605-610 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Uesugi: "STM observation of solid phase epitaxy processes of Ar-sputtered Si(100)surfaces" Mat.Res.Soc.Symp.Proc.280. 619-624 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 川見,浩: "高性能原子間力顕微鏡(AFM)の開発" 固体物理. 29. 139-144 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Uesugi: "Scanning tunneling mictoscopy study of the reaction of AlCl_3 with the Si(111)surface" J.Vac.Sci.Technol.B12. 2008-2011 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Uesugi: "Scanning tunneling mictoscopy observation of the reaction of A1C1_3 on Si (111) -7x7 surface" Mar.Res.Soc.Symp.Proc.334. 419-423 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Yoshimura: "The commensurate phase of A1 overlayers on the Si (111) syrfaces:STM Study of the g-phase surface" Mar.Res.Soc.Symp.Proc.317. 27-31 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Inoue: "Tunneling from the Metal Layer of a Transition-Metal Dichalogenide MoS2" Proc.of 22nd Int'1.Conf.on The Physics of Semiconductors. 1. 565-570 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Masamichi Yoshimura: "Growth Processes of Al on Si (111) Surface Studied by Scanning Tunneling Microscopy" Proc.of 22nd Int'1.Conf.on The Physics of Semiconductors. 1. 644-647 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Katsuhiro Uesugi: "Solid-Phase Epitaxy Processes of Amotphous silicon Layers on Si (001) Substnates observed with Scanning Tunnelig Microscopy" Proc.of 22nd Int'1.Conf.on The Physics of Semiconductors. 1. 640-643 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Masamichi Yoshimura: "Ni-Induced “1x1"Structure on Si (111) Studied by Scanning Tunneling Microscopy" Proc.of 22nd Int'1.Conf.on The Physics of Semiconductors. 1. 580-584 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Takiguchi: "Manipulation of atoms and molecules on A1C13-Adsorbed Si (111) Surfaces" Proc.of 22nd Int'1.Conf.on The Physics of Semiconductors. 1. 521-525 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Inoue: "Selective Imaging of Metal Atoms in the Semiconducting Layeted Compound MoS2 by STM/STS" Mat.Res.Soc.Symp.Proc.332. 293-297 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] X.Li: "Surface Physics" Gordon and beach science publishers, 232 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 権田俊一: "分子線エピタキシ" 裳華房, 349 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Uesugi and T.Yao: "Nanometer-scale fabrication on graphite surfaces by scanning tunneling microscopy" Ultramicroscopy. 42-44. 1443-1447 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Tomohiro KONISHI,Takafumi YAO,Michio TAJIMA,Hisayoshi OSHIMA,Hiroyasu ITO and Tadashi HATTORI: "Characterization of HF-Treated Si Surfaces by Photoluminescence Spectroscopy" Japanese Journal of Applied Physics. 31. 1216-1219 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Uesugi, K.Takaoka, and T.Yao: "Local structures on silicon surfaces studied with STM (japanese)" Journal of Electrical Engineering SocieryC. 112. 671-675 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Tomohiro KONISHI,Katsuhiro UESUGI,Katsuya TAKAOKA,Seiji KAWANO,Masamichi YOSHIMURA and Takafumi YAO: "Characterization of HF-treated Si (111) surfaces" Japanese Journal of Applied Physics. 32. 3131-3134 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Katsuhiro Uesugi, Takafumi Yao, Tomoshige Sato, Takashi Sueyoshi and Masashi Iwatsuki: "Observation of solid phase epitaxy processes of Ar ion bombarded Si (001) surfaces by scanning tunneling microscopy" Applied Physics Letters. 62. 1600-1604 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Masamichi Yoshimura, Katsuya Takaoka, Takafumi Yao, Tomoshige Sato, Takashi Sueyoshi, and Masashi Iwatsuki: "Low-coverage, low-temperature phase of Al overlayrs on Si (111) alpha-7x7 structure observed by scanning tunneling microscopy" Physical Review. B47. 13930-13933 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Katsuhiro UESUGI,Masamichi YOSHIMURA,Tomoshige SATO,Takashi SUEYOSHI,Masashi IWATSUKI and Takafumi YAO: "Scanning Tunneling Microscopy Observation of Ar-Ion Bombarded Si (001) Surfaces and Regrowth Processes by Thermal Annealing" Japanese Journal of Applied Physics. 32. 6203-6207 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Katsuya Takaoka, Masamichi Yoshimura, Takafumi Yao, Tomoshige Sato, Takashi Sueyoshi, and Masashi Iwatsuki: "Al-/3x/3 domain structure on Si (111) -7x7 observed by scanning tunneling microscopy" Physical Review. B48. 5657-5659 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Katsuhiro UESUGI,Takaharu TAKIGUCHI,Michiyoshi IZAWA,Masamichi YOSHIMURA and Takafumi YAO: "Adsorption and Desorption of AlCl_3 on Si (111) -7x7 Observed by Scanning Tunneling" Japanese Journal of Applied Physics. 32. 6200-6206 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Masamichi Yoshimura, Katsuya Takaoka, Takafumi Yao, Tomoshige Sato, Takashi Sueyoshi, and Masachi Iwatsuki: "Al induced reconstructions on the Si (111) surfaces studied by scanning tunneling microscopy" Solid State Physics. 28. 177-182 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Kawami, S.Inoue, M.Yoshimura, and T.Yao: "A scanning tunneling microscope (japanese)" Mat.Res.Soc.Symp.Proc.295. 157-160 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Uesugi, K.Sakata, S.Kawano, M.Yoshimura, and T.Yao: "Deposition of nano-scale Ga dots onto HF-treated Si (111) using a scanning tunneling microscope" Mat.Res.Soc.Symp.Proc.279. 605-610 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Uesugi, M.Yoshimura, T.Yao, T.Sato, T.Sueyoshi, and M.Iwatsuki: "STM observation of solid phase epitaxy processes of Ar-sputtered Si (100) surfaces" Mat.Res.Soc.Symp.Proc.280. 619-624 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Kawami, S.Inoue, M.Yoshimura, and T.Yao: "A high performance atomic force microscope (japanese)" Solid State Physics. 29. 139-144 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Uesugi, T.Takiguchi, M.Yoshimura, and T.Yao: "Scanning tunneling microscopy study of the reaction of AlCl_3 with the Si (111) surface" J.Vac.Sci.Technol.B12. 2008-2011 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Uesugi, T.Takiguchi, M.Izawa, M.Yoshimura, and T.Yao: "Scanning tunneling microscopy observation of the reaction of AlCl_3 on Si(111)-7x7 surface" Mat.Res.Soc.Symp.Proc.334. 419-423 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Yoshimura, K.Takaoka, and T.Yao: "The commensurare phase of Al overlayrs on the Si (111) surfaces : STM study of the g-phase surface" Mat.Res.Soc.Symp.Proc.317. 27-31 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Inoue, H.Kawami, M.Yoshimura, T.Yao: "Tunneling from the Metal Layr of a Transition-Metal Dichalogenide MoS2" Proc.of 22nd Int'l Conf.on The Physics of Semiconductors. 1. 565-570 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Masamichi Yoshimura, Katsuya Takaoka, Takafumi Yao: "Growth Processes of Al on Si (111) Surface Studied by Scanning Tunneling Microscopy" Proc.of 22nd Int'l Conf.on The Physics of Semiconductors. 1. 644-647 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Katsuhiro Uesugi, Takuji Komura, Masamichi Yoshimura, Takafumi Yao: "Solid-Phase Epitaxy Processes of Amorphous silicon Layrs on Si (001) Substrates observed with Scanning Tunnelig Microscopy" Proc.of 22nd Int'l Conf.on The Physics of Semiconductors. 1. 640-643 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Masamichi Yoshimura, Shinji Shinabe, Takafumi Yao: "Ni-Induced "1x1" Structure on Si (111) Studied by Scanning Tunneling Microscopy" Proc.of 22nd Int'l Conf.on The Physics of Semiconductors. 1. 580-584 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Takiguchi, K.Uesugi, M.Yoshimura, T.Yao: "Manipulation of atoms and molecules on AlCl3-Adsorbed Si (111) Surfaces" Proc.of 22nd Int'l Conf.on The Physics of Semiconductors. 1. 521-525 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Inoue, H.Kawami, M.Yoshimura, T.Yao: "Selective Imaging of Metal Atoms in the Semiconducting Layred Compound MoS2 by STM/STS" Mat.Res.Soc.Symp.Proc.332. 293-297 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] X.Li, Z.Qiu, D.Shen, and D.Wang: Surface Physics. Gordon and beach sciencs publishers, 232 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Gonda: Molecular Beam Epitaxy (Chapter 7). Shokabo, 349 (1994)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1996-04-15  

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