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1992 Fiscal Year Final Research Report Summary

Reflection Microscope Study of Current Effects on Si surfaces

Research Project

Project/Area Number 03452077
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionTokyo Institute of Technology

Principal Investigator

YAGI Katsumichi  Tokyo Inst. Tech., Phys. Dept. Prof., 理学部, 教授 (90016072)

Co-Investigator(Kenkyū-buntansha) MINODA Hiroki  Tokyo Inst. Tech., Phys. Dept. Res. Assoc., 理学部, 助手 (20240757)
TANISHIORO Yasumasa  Tokyo Inst. Tech., Phys. Dept. Res. Assoc., 理学部, 助手 (40143648)
Project Period (FY) 1991 – 1992
Keywordselectromigration / current effect on surfaces / Si surfaces / phase transition of Si(III) surface
Research Abstract

Results obtained in two years can be classified into two topics. (1) Observations of Surface electromigration of metal atoms on Si surfaces and (2) observations of current effects on clean Si surfaces.
(1) Surface electromigration of Ge parallel to the current and surface electromigration of Ag parallel to the current but preferentially parallel to surface atomic steps were studied. For co-adsorption structure of Cu-Au, ROO<3>xROO<3> structure, phase separation caused by DC current was noticed. Surface electromigration of Ag and In on modified surfaces such as Si(III)5x5-Ge and Si(III)ROO<3>xROO<3>-Ag structures was studied, and strong effect of migration features due to the modification was noticed. Also a close correlation between the migration direction and photoemission changes due to additional depositon of metals was found.
(2) It was well known that above the phase transition between Si(III)7x7 and 1x1, a step-up DC current causes a regular array of surface steps (R surface) and a step-down current causes step bunching (B surface). It was observed that this current effect reverses three times when the surface was cooled to the 7x7 phase, i. e., under a step-up current, a R surface changed to a B surface when the 7x7 structure appear at outer edges of steps and returned to a R surface when the 7x7 structure cover more than 40-50% of the terraces, and finally changed into a B surface when the 7x7 structure regions covered more than 80% of the terraces. It was also found that such processes slightly depended on the character of the steps, which was closely related to relative strength of a spontaneous shape fluctuation of the steps.

  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] A.Yamanaka,Y.Tanishiro and K.Yagi: "Surface Electroniqration of An or Si(111) Studied by RBM" Oroering at Surfaces and Iuterfaces. 17. 215-226 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Yamaguchi,Y.tanishiro and K.Yagi: "REM Sridy of Surface Slectrowigration of Ge,An-Cn and Ag on Si(111) Surfaces" Appl.Surfece Sci.60/61. 79-84 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Yagi,H.Minoda,M.Shima,H.Yamaguchi: "REM Study of Surface Dy nauric Processes:Thin Filu.Growith and Surface Electroniqration" Proc.S H APEM. 48-51 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Yagi,A Yamanaka and H.Yamaguchi: "Surface Slectronrigration of wetals on Si Surlaces Studicd by FEM" Surface Sci. (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Yamaguchi and K.Yagi: "Cuvrent Effects on Si(111) Surfaces at the Plare Tvansitian between the 7X7 and 1X1 Structures" Surface Sci. (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Yamaguchi,T.Ohkawa and K.Yogi: "Surface Electronrigration of Motrl Afans an Modified Si(111) Surfaces Studied by REM" Ultvauriciosropy. (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 八木 直道(分担.編集): "国体表面の物理" 美術出版センター, 297-308 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Yagi(分担): "Electron Diffraction Technique" Oxford University Press, (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Yamanaka, Y. Tanishiro and K. Yagi: "Surface electromigration of Au on Si(III) Studied by REM" Ordering at Surfaces and interfaces. 215-226 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Yamanaka, Y. Tanishiro and K. Yagi: "REM Study of Surface electromigration of Ge, Au-Cu and Ag on Si(III) Surfaces" Appl. Surface Sci. 60/61. 79-84 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Yagi, H. Minoda, M. Shima, H. Yamaguchi: "REM Study of Surface Dynamic Processes; Thin Film Growth and Surface Electro-migration" Proc. 5th APEM. 48-51 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Yagi, A. Yamanaka and H. Yamaguchi: "Surface Electromigration of Metals on Si Surfaces Studied by REM" Surface Sci.(1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Yamaguchi and K. Yagi: "Current Effects on Si(III) Surfaces at the Phase Transition between the 7x7 and 1x1 Structures" Surface Sci.(1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Yamaguchi, T. Ohkawa and K. Yagi: "Surface Electromigration of Metal Atoms on Modified Si(III) Surfaces Studied by REM" Ultramicroscopy. (1993)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1994-03-24  

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