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1992 Fiscal Year Final Research Report Summary

Fundamental study on realization of low noise semiconductor laser amplifier using multi-dimensional quantum well structure and its integration.

Research Project

Project/Area Number 03452150
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionTokyo Institute of Technology

Principal Investigator

ARAI Shigehisa  Tokyo Inst. of tech., Faculty of engineering, Assoc.Professor, 工学部, 助教授 (30151137)

Co-Investigator(Kenkyū-buntansha) KOMORI Kazuhiro  Tokyo Inst. of Tech., Faculty of engineering, Research Assoc., 工学部, 助手 (20202070)
Project Period (FY) 1991 – 1992
KeywordsSemiconductor laser amplifier / Multi-dimensional quantum well / Quantum wire / Quantum box / Noise / Noise figure / Regrowth / Tapered waveguide / 自然放出光間ビート雑音
Research Abstract

The main purpose of this study is to establish the basis of multi-dimensional quantum well semiconductor laser amplifier.
Results obtained in this research are as follows.
Theoretical noise characteristics of a semiconductor laser amplifier with quantum-wire and quantum-box structure were analyzed using density matrix theory. It is clarified that the minimum noise figure can be reduced to 3.3dB, which is close to theoretical limit of 3dB, in the quantum-box structures.
A 1.5mu m quantum-wire semiconductor laser was realized using EB lithography and OMVPE regrowth method. In order to remove the problem of the regrowth interface, the semiconductor laser was grown on p-Inp substrate and the surface treatment was done. As a result, the low threshold current (- 50mA) CW operation is attained in 1.5mu m GaInAs/GaInAsP/InP quantum-wire laser.
Amplification and propagation characteristics of tapered waveguide traveling wave-semiconductor laser amplifier (TTW-SLA) were analyzed. It is clarified that the tapered structures provide improvements in saturation output power of 13dB and efficiency of 20% compared to conventional SLAs.

  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] Y.Miyake: "Threshold Current Reduction of GaInAs/GaInAsP/InP SCH Quantum-Well Laser with Wire-Like Active Region by using p-type Substrate" IEEE Photon.Technol.Lett.4. 964-966 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] G.Bendelli: "Gain Saturation and Propagation Characteristics of Index-Guided Tapered-Waveguide Traveling Wave Semiconductor Laser Amplifier(TTW-SLA's)" IEEE J.Quantum Electron. 28. 447-458 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Kudo: "Reduction of Effective Linewidth Enhancement Factor α eff of DFB Laser with Complex Coupling Coefficient" IEEE Photon.Tech.Lett.4. 531-534 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Dong: "A GaInAsP/InP Grating Filter Multiple-Stripe Laser Array Operating in In-Phase Lateral-and Single-Longitudinal-Mode" IEEE Photon.Technol.Lett.4. 491-494 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Komori: "Noise Study of Low Dimensional Quantum Well Semiconductor Laser Amplifiers" IEEE,J.Quantum.Electron.28. 1894-1900 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Komori: "Fabrication of GaInAs/InP Quantum Wires by Organometallic-Vapor-Phase-Epitaxial(OMVPE)Selective Growth on Grooved Side Walls of Ultrafine Multi-layers" Jpn.J.Appl.Phys.31. L535-L538 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Miyake: "Threshold Current Reduction of GaInAs/GaInAsP/In PSCH Quantum-Well Laser with Wire-Like Active Region by using p-type Substrate" IEEE Photon. Technol. Lett.4. 964-966 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] G.Bendelli: "Gain Saturation and Propagation Characteristics of Index-Guided Tapered-Waveguide Traveling Wave Semiconductor Laser Amplifier (TTW-SLA's)" IEEE J.Quantum Electron. 28. 447-458 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Kudo: "Reduction of Effective Linewidth Enhancement Factor alpha eff of DFB Laser with Complex Coupling Coefficient" IEEE Photon. Tech. Lett.4. 531-534 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Dong: "A GaInAsP/InP Grating Filter Multiple-Stripe Laser Array Operating in In-Phase Lateral- and Single-Longitudinal-Mode" IEEE Photon.Technol.Lett. 4. 491-494 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Komori: "Noise Study of Low Dimensional Quantum Well Semiconductor Laser Amplifiers" IEEE,J.Quantum.Electron.28. 1894-1900 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Komori: "Fabrication of GaInAs/InP Quantum Wires by Organometallic-Vapor-Phase-Epitaxial (OMVPE) Selective Growth on Grooved Side Walls of Ultrafine Multi-layers" Jpn.J.Appl.Phys. 31. L535-L538 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] P.A.Yazaki: "Chirping compensation using a Two-Section Semiconductor Laser Amplifier" IEEE,J.Lightwave Technol.10. 1247-1255 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Dong: "Single Wavelength Grating Filter Laser Array with Ga_<3.3>In_<0.7>As/GaInAsP/InP Strained MQW Structure" IEEE Photon.Tech.Lett. 4. 957-960 (1992)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1994-03-24  

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