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1992 Fiscal Year Final Research Report Summary

Fundamental research on low energy electron beam assisted selective etching and deposition for submicron LSI fabrication

Research Project

Project/Area Number 03452181
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 電子機器工学
Research InstitutionOsaka University

Principal Investigator

FUJIOKA Hiromu  Osaka University, Faculty of Engineering, Professor, 工学部, 教授 (40029228)

Co-Investigator(Kenkyū-buntansha) NAKAMAE Koji  Osaka University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (40155809)
Project Period (FY) 1991 – 1992
KeywordsElectron beam assisted selective etching / Electron beam assisted selective deposition / Large scale integrated circuit / Secondary electron / Specimen current
Research Abstract

1. The specimen chamber in a conventional scanning electron microscope (SEM) was modified to direct gas onto the specimen surface through a gas injection nozzle which had a 0.2 mm diameter. The gas supply system was attached to the SEM specimen chamber.
2. Electron beam assisted selective etching of SiO_2 by using XeF_2 gas: (1) Experimental results showed that the etching end point could be determined from either the specimen current or the secondary electron current monitored during the electron beam irradiation. (2) The etch rate were higher at lower primary electron energies, lower specimen temperatures, larger gas flow rates and larger electron beam currents. (3) The etched hole diameters at the etching end point are found to be nearly equal to the tail diameters of the beam profiles. (4) A groove with the high aspect ratio of ten was formed in 2mum thick SiO_2 by using an electron beam probe with an energy of 15 keV, a current of 50 pA and a tail diameter-of 0.15mum.
3. Electron beam assisted selective deposition on SiO_2 by using Fe(CO)_5 gas: (1) The deposition rate were higher at lower primary electron energies, lower specimen temperatures, larger gas flow rates and larger electron beam currents. (2) The resistivity was estimated from the measurement of resistance between two Al metal lines which were connected by Fe deposition. The result showed a resistivity of more than six orders of magnitude more than bulk Fe. The cause could be due to the oxide of Al surface.

  • Research Products

    (10 results)

All Other

All Publications (10 results)

  • [Publications] K.Nakamae: "Electron beam assisted high aspect ratio,submicrometre etching of passivation SiO_2 on large-scale integrated circuits" J.Phys.D:Appl.Phys.25. 1681-1686 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 中前 幸治: "LSI表面保護膜のサブミクロン電子ビームエッチング" 日本電子顕微鏡学会第47回学術講演会資料,PIII-14. (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 中前 幸治: "LSI表面保護膜の高アスペクト比/サブミクロン電子ビームエッチング" 日本学術振興会第132委員会第115回研究会資料. 7-12 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 石井 友規: "電子ビームエッチング開口窓による電位コントラストの測定" 日本学術振興会第132委員会第117回研究会資料. 142-147 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 小迎 聰: "電子ビームエッチング開口窓による電位コントラストの測定" 日本電子顕微鏡学会第48回学術講演会資料,PD-19. (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Nakamae et al: "Electron beam assisted high aspect ratio, submicrometre etching of passivation SiO_2 on large-scale integrated circuits" J. Phys. D: Appl. Phys.25. 1681-1686 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Nakamae et al: "Electron beam assisted submicron etching of the passivation SiO_2 on LSIs" J. Electron Microscopy. 40. 296 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Nakamae et al: "Electron beam assisted high aspect ratio/submicron etching of the passivation SiO_2 on LSIs" Proc. 115th Meeting of Japan Society for the Promotion of Science, 132nd Committee. 7-12 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Ishii et al: "Measurements of voltage contrast through micrometer-size holes opened by electron beam assisted etching" Proc. Symposium on Electron Beam Testing, Osaka. 142-147 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Komukai et al: "Measurements of voltage contrast through micrometer-size holes opened by electron beam assisted etching" J. Electron Microscopy. 41. 319 (1992)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1994-03-24  

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