1992 Fiscal Year Final Research Report Summary
Study on Single Crystal Growth by Solid State Recrystallization using Defect Sulfide Spinel Compounds
| Project/Area Number |
03452294
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
結晶学
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| Research Institution | DOSHISHA UNIVERSITY |
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Principal Investigator |
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| Project Period (FY) |
1991 – 1992
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| Keywords | sulfide spinel compounds / Solid state reaction / Solid state Crystal growth / defect type spinel |
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| Research Abstract |
Solid state recrystallization method to grow large single crystal of silver or copper defect sulfide spinel compounds was studied. These sulfide spinel compounds have large atomic transport through solid state because of electronic and ionic mixed conductors.
The purpose of this study was to clarify the mechanism of the solid state recrystallization and grow single crystal of defect spinel compounds of silver or copper defect sulfide spinel.
Single crystals of normal sulfide spinel, MIn_5S_8 (M=Cu,Ag) and defect spinels, MIn_7S_<11>, MIn_9S_<14>, MIn_<11>S_<17> and MIn_<21>S_<32> were grown by a horizontal Bridgman method and successive annealing at high temperature. This method is a suitable way to grow large single crystals, which have different liquidus and solidus.
The crystal structures were analyzed by a X-ray diffraction method. According to the increment of the number of defect vacancy in the unit cell, lattice constants of Cu-In-S series and Ag-In-S series were linearly increased and decreased respectively.
X-ray Photoelectron Spectroscopy (XPS) is used to analyze the valence of Cu, Ag and In ions. Cu and Ag take +1 valence and In takes +3 valence.
By a solid-vapor reaction, chemical diffusion coefficients of metallic atom in solid state were determined. With increasing the number of vacancies, chemical diffusion coefficient of them increase.
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