1992 Fiscal Year Final Research Report Summary
High-Quality Single Crystal Growth of Rare Earth Inter metallic compounds under Ultra-high vacuum
| Project/Area Number |
03554006
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| Research Category |
Grant-in-Aid for Developmental Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
固体物性
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| Research Institution | University of Tsukuba |
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Principal Investigator |
ONUKI Yoshichika Univ. of Tsukuba Institute of Materials Science A. Prof., 物質工学系, 助教授 (40118659)
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| Co-Investigator(Kenkyū-buntansha) |
SATOH Kazuhiko Univ. of Tsukuba Institute of Materials Science R. Associate, 物質工学系, 助手 (60225927)
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| Project Period (FY) |
1991 – 1992
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| Keywords | Ultra-high vacuum / zone melting / Crystal Growth / Heavy Electrons / Rare Earth Compounds / CeRu_2Si_2 / LaRh_2 |
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| Research Abstract |
We have constructed the zone-melting rf furnace under a ultra-high vacuum condition. An ingot of the rare earth compound is set on the boat-like Cu-hearth which is cooled by water. When this ingot passes through the rf working coil, it melts partially and grows as an single crystal.
(1)The single crystals of CeRu_2Si_2 were first grown by the tri-arc Chochralski pulling method in an argon gas atmosphere and were annealed at 1500ﾟC under a high vacuum of 1x10^<-8>torr for five hours. The residual resistivity ratio of the obtained sample was 250, indicating good quality of the crystal. By using this high-quality sample we have observed a super-heavy carrier with the large cyclotron mass 120m_0.
(2)We have also succeeded in growing a single crystal of LaRh_2 by a zone-melting method in the present furnace. The sweep-speed for zone-melting was 5mm/hr. An obtained single crystal ingot was about 5mm in diameter and 30mm in length. The Fermi surface of LaRh_2 was determined by the dHvA effect.
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