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1992 Fiscal Year Final Research Report Summary

Low Temperature Fluorination of GaAs Surface

Research Project

Project/Area Number 03650019
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionTokyo Metropolitan Univ.

Principal Investigator

OKUMURA Tsugunori  Tokyo Metro-U., Fac. Tech., Prof., 工学部, 教授 (00117699)

Co-Investigator(Kenkyū-buntansha) KAIBE Hiromasa  Tokyo Metro-U., Fac. Tech., Assistant, 工学部, 助手 (40224331)
SHIMURA Michiko  Tokyo Metro-U., Fac. Tech., Ass. Prof., 工学部, 助教授 (60087294)
Project Period (FY) 1991 – 1992
KeywordsGaAs / Plasma Fluorination / Fuluoride / XPS / a-Si / Remote Plasma / Hydrogen Cleaning / Surface Damage
Research Abstract

1) The GaAs surface was fluorinated at low temperatures as low as 300C in CF_4 plasma.
2) The constitution and the composition of the fluoride films were analyzed by XPS. The film contained oxygen as well as elemental arsenic in the vicinity of the GaAs substrate.
3) The MIS diodes fabricated with the fluoride film/n-GaAs showed fairly good electrical characteristics comparable to the SiO_2/hydrogenated-GaAs structure.
4) An a-Si overlayer as a protection layer against moisture was tried in order to reduce oxygen introduction into the fluoride film, but in vain.
5) Hydrogen cleaning of the substrate surface, possibly covered with native oxides, was done by using newly developed "remote plasma" chamber with three independent electrodes.
6) Ionic species of hydrogen was very effective to remove native oxides on the substrate even below 300C, and furthermore introduced no process induced damages.
7) Further study is needed for elimination of elemental arsenic in the film.

  • Research Products

    (4 results)

All Other

All Publications (4 results)

  • [Publications] M.Iida,H.T.Kaibe,T.Okumura: "Low-Temperature Fluorination of GaAs Surface by CF_4 Plasma" Jpn.J.Appl.Phys.30. 1581-1584 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S-Q.Shao,H.T.Kaibe,T.Okumura: "Incorporation of Proton-Related Donor in Near-Surface Region of GaAs upon Plasma Hydrogenation" Proc.19th GaAs and Related Compounds to be publishad in Inst.Phys.Cont.Ser.(London). (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M. IIda, H.T. Kaibe and T. Okumura: "Low-Temperature Fluorination of GaAs surface by CF_4 Plasma" Jpn. J. Appl. Phys.Vol.30. 1581-1584 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.-O. Shao, H.T. Kaibe and T.Okumura: "Incorporation of Proton-Related Donor in Near-Surface Region of GaAs upon Plasma Hydrogenation" Proc. 19th GaAs & Related Compounds to be published in Inst. Phys. Conf. Ser. (London, 1993).

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1994-03-24  

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