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1992 Fiscal Year Final Research Report Summary

Structure Analysis of Point-Defect-Aggregates in Semiconductors by Means of Crystallographic Techniques

Research Project

Project/Area Number 03680047
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 結晶学
Research InstitutionOsaka University

Principal Investigator

TAKEDA Seiji  College of General Education, Associate Professor, 教養部, 助教授 (70163409)

Co-Investigator(Kenkyū-buntansha) KOHYAMA Masanori  Glass and Ceramic Material Department, Government Industrial Research Institute,, 主任研究官
OHNO Yutaka  College of General Education, Research Associate, 教養部, 助手 (80243129)
武藤 俊介  大阪大学, 教養部, 助手 (20209985)
HIRATA Mitsuji  College of General Education, Professor, 教養部, 教授 (00029638)
Project Period (FY) 1991 – 1992
Keywordssemiconductors / point defect / interstitial atom / electron irradiation / ion implantation / electron diffraction / hydrogen / transmission electron microscopy
Research Abstract

Point defects in a semiconducting material are introduced during crystal growth, heat treatment, electron irradiation and ion-implantation. It is well known that they gave a considerable chance to aggregate at elevated temperatures. Atomic structures of several aggregates have remained uncertain, and this fact has caused unnecessary confusion. In the present research, atomic structures of the aggregates have been analyzed by means of transmission electron diffraction and transmission electron microscopy. Since the atoms which constitute a covalent material have a strong tendency to form covalent bonds even in a defect region, it is expected that the atomic structure of aggregates has a kind of order. This is the reason of the advantage of transmission electron diffraction and electron microscopic techniques, which are very convenient means to analyze small particles of a periodic structure which are embedded in the matrix crystal. The results of our analysis are summarized as follows.
1 … More . Defect on {113} in Si and Ge
A proposed atomic model shows that interstitial Si atoms aggregate on {113} and form a reconstructed structure in the interior of a Si crystal. The model is characterized by 5-6-7-and 8-membered atomic rings and has no dangling bond in the {110} projection. The 6-membered rings constitute tiny rods of the hexagonal structure, and the 8-membered rings are related to the {113} surface structure. It has been confirmed based on an energy calculation that the energy per self interstitial atom in the reconstructed structure is distinctively smaller than that estimated for an isolated interstitial atom.
2. Planar defects in a Si-doped GaAs crystal
Small precipitates of triangular shape are observed in a Si-doped GaAs crystal. Transmission electron microscopic study has indicated that the two {111} crystallographic net planes of Si are inserted between the two existing {111} net planes in a GaAs crystal.
Furthermore, we have proposed a new atomic model for a hydrogen-induced platelet in Si based on the precise analysis of high-resolution electron microscopic images.
In conclusion, the crystallographic techniques such as electron diffraction and microscopy are very useful in analyzing atomic structures of point-defect-aggregates in semiconducting materials. Less

  • Research Products

    (17 results)

All Other

All Publications (17 results)

  • [Publications] T.Taguchi,Y.Yamada,Y.Endoh,Y.Nozue,J.T.Mullins,T.Ohno,Y.Masumoto and S.Takeda: "II-V Widegap Superlattices" Superlattices Microstruct.10. 207-215 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Takeda,M.Hirata,S.Muto,G.C.Hua,K.Hiraga and M.Kiritani: "HRTEM Obsrvation of Electron-Irradiated-Induced Defects Penetrating through a Thin Foil of Germanium" Ultramicroscopy. 39. 180-186 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.TAKEDA: "An Atomic Model of Electron-Irradiation-Induced Defects on {113}" Jpn.J.Appl.Phys.30. L639-L642 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.TAKEDA,S.MUTO and M.HIRATA: "Atomic Structure of the Interstitial Defects in Electron-Irradiated Si and Ge" Materials Science Forum. 83-87. 309-314 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.MUTO,S.TAKEDA,M.HIRATA and T.TANABE: "Structure of Hydrogen-Induced Planar Defect in Silicon by High-Resolution Electron Microscopy" J.Appl.Phys.70. 3505-3508 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.HIRATA,K.FIJII and K.IBE: "Structure of Planar Aggregates of Si in Heavily Si-Doped GaAs" Phil.Mag.A66. 257-268 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Taguchi, Y. Yamada, Y. Endoh, Y. Nozue, J. T. Mullins, T. Ohno, Y. Masumoto and S. Takeda: "II-V Widegap Superlattices" Superlattices Microstruct. 10. 207-215 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Takeda, M. Hirata, S. Muto, G. C. Hua, K. Hiraga and M. Kiritani: "HRTEM Observation of Electron-Irradiated-Induced Defects Penetrating through a Thin Foil of Germanium" Ultramicroscopy. 39. 180-186 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Takeda: "An Atomic Model of Electron-Irradiation-Induced Defects on {113} in Si" Jpn. J. Appl. Phys. 30. L639-L642 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Takeda, S. Muto and M. Hirata: "Atomic Structure of the Interstitial Defects in Electron-Irradiated Si and Ge" Materials Science Forum. 83-87. 309-314 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Muto, S. Takeda, M. Hirata and T. Tanabe: "Structure of Hydrogen-Induced Planar Defect in Silicon by High-Resolution Electron Microscopy" J. Appl. Phys. 70. 3505-3508 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Muto, S. Takeda, M. Hirata, K. Fijii and K. Ibe: "Structure of Planar Aggregates of Si in Heavily Si-Doped GaAs" Phil. Mag. A66. 257-268 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Takeda, S. Muto and M. Hirata: "Atomic Structures of Planar Defects in Si and GaAs" Mat. Res. Soc. Symp. Proc. 262. 209-214 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Koyama and S. Takeda: "Atomic structure and energy of the {113} planar interstitial defects in Si" Phys. Rev. B46. 12305-12315 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Takeda and K. Ibe: "Structural Analysis of Point-Defect-Aggregates on {113} in Si" JEOL news. 29E No.2. 22-25 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Takeda: "Interior-Lattice-Reconstruction in a Si Crystal: Atomic Structure of the {113}Planar Defect in Si (in Japanese)" Bulletin of the Japanese Crystallographic Society. 33. 333-338 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Takeda and K. Ibe: "A new secondary defect in Si analyzed by transmission electron microscopy (in Japanese)" Bulletin of the Japanese Society of Electron Microscopy. 27. 59-62 (1992)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1994-03-24  

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