1992 Fiscal Year Annual Research Report

超薄膜超微細構造デバイスに関する研究

Research Project

Project/Area Number	04044062
Research Institution	Tokyo Institute of Technology
Principal Investigator	小田俊理東京工業大学, 工学部, 助教授 (50126314)
Co-Investigator(Kenkyū-buntansha)	W I ミルンケンブリッジ大学, 工学部, 講師 D F ムーアケンブリッジ大学, 工学部, 講師座間秀昭東京工業大学, 工学部, 助手 (50206033) 杉浦修東京工業大学, 工学部, 助教授 (10187643) 松村正清東京工業大学, 工学部, 教授 (30110729)
Keywords	超高速デバイス / 超伝導デバイス / 極微細加工プロセス / 電子ビーム露光技術 / 超薄膜結晶成長 / 量子効果デバイス
Research Abstract	本研究は、超高速超集積電子デバイスの基礎を確立することを目指して、超伝導、半導体、絶縁物を原子スケールで制御して作製することを目的とした。代表研究者の小田と共同研究者の座間は、高温超伝導体超薄膜の原子層化学気相成長(CVD)法を研究して、アダクツ利用による高安定CVD原料の開発、光学反射法による結晶成長のその場観察が原子レベルにおける超薄膜結晶成長に極めて有効であることを見出した。さらに、ケンブリッジ大学グループとの研究討論を踏まえて、光アシストCVD法、プラズマアシストCVD法などにより低温成長の可能性を見出している。また小田らは、量子効果ナノクリスタルシリコンの粒径、粒子密度、粒子位置、界面電子準位を制御して作製するディジタルCVD法を提案した。さらに、電子ビーム露光法によるシリコン超微細構造量子細線の新しい形成法であるトレンチ酸化膜MOS構造の研究にも着手した。共同研究者の松村と杉浦はシリコンの原子層エピタキシー、ナローギャップ半導体の分子線エピタキシーの研究を行い、超薄膜結晶成長条件を明確にした。ケンブリッジ大学のムーアは電子ビーム照射により極微細構造を形成した高温超伝導ジョセフソン接合の電気特性を調べると共に、電子ビーム露光と反応性エッチングによりシリコン窒化膜中に20nm以下の極微細構造を形成できることを明らかにした。ケンブリッジ大学のミルンはアモルファスシリコン超薄膜デバイス特性の信頼性と、欠陥、水素処理の関係を明確にし、デバイス集積化の検討を行った。

Research Products

(17 results)

All Other

All Publications (17 results)

[Publications] H.ZAMA: "Preparation of Highly Oriented Copper Films by Photo-Assisted Chemical Vapor Deposition Using β-Diketonate Complex," Jpn.J.Appl.Phys.31. L588-L590 (1992)
[Publications] K.FUJII: "Preparation of YBa_2Cu_3O_x Thin Films by Layer-by-Layer Metalorganic Chemical Vapor Deposition." Jpn.J.Appl.Phys.31. L787-L789 (1992)
[Publications] H.ZAMA: "In-Situ Optical Monitoring of Oxide Superconductor Growth for Layer-by-Layer Chemical Vapor Deposition." Extended Abstracts of 1992 International Conference on Solid State Devices and Materials Conference,Tsukuba.August 26-28,. 460-462 (1992)
[Publications] H.ZAMA,: "In-Situ Monitoring of Optical Reflectance Oscillation in Layer-by-Layer Chemical Vapor Deposition of Oxide Superconductor Films," Jpn.J.Appl.Phys.31. L1243-L1245 (1992)
[Publications] H.ZAMA,: "Preparation and Characterization of YBaCuO Films by Photo-Assisted Chemical Vapor Deposition," Proceedings of 6th International Conference on Ferrites,Tokyo,September 29-October 2,. (1992)
[Publications] S.ODA,: "Self-Limiting Adsorption and In-Situ Optical Monitoring for Atomic Layer Epitaxy of Oxide Superconductors," Thin Solid Films. (1992)
[Publications] H.ZAMA: "Preparation and Characterization of YBaCuO Superconducting Films by Low-Temperature Chemical Vapor Deposition Using β-Diketonate Complex and N_2O" Jpn.J.Appl.Phys.31. 3839-3843 (1992)
[Publications] S.ODA: "In-Situ Optical Monitoring of Crystal Growth in Layer-by-Layer Chemical Vapor Deposition of YBa_2Cu_3O_x" Proceedings of Sixth Topical Meeting on Crystal Growth Mechanism,. 277-282 (1992)
[Publications] S.SUGAHARA: "Electronic Structure of Si-Based Manmade Crystals" Jpn.J.Appl.Phys.32. 384-388 (1993)
[Publications] S.IMAI: "Atomic Layer Epitaxy of Si Using Atomic Hydrogen" Thin Solid Films,. 223. (1993)
[Publications] D.H.Choi: "Drastic Enlargement of Grain Size of Eximer Laser Si" Jpn.J.Appl.Phys.31. 4545-4549 (1992)
[Publications] D.F.Moore: "Fabrication of Sub-20mm Structures in Silicon Nitride Using CHF3/O2 RIE." Microcircuit Eng.17. 531-538 (1992)
[Publications] A.J.Pauza: "High-Tc Josephson Junctions by Electron Beam Irradiation" Applied Superconductivity Conference,Chicago,. 42-45 (1992)
[Publications] Y.UCHIDA: "Post Hydrogenation of LPCVD a-Si Using an Internal Hydrogen Discharge Lamp and Its Application to TFT" J.Appl.Phys.72. 3150-3154 (1992)
[Publications] M.J.Powell: "Bias Stress Induced Creation and Removal of Dangling Bond States in Amorphous Silicon TFTs" Appl.Phys.Letters,. 60. 207-209 (1992)
[Publications] W.I.Milne: "The Role of The Gate Insulator in the Defect Pool Model for hydrogenated Amorphous Silicon Thin Film Transistor Characteristics" J.Appl.Phys.(1993)
[Publications] Q.Huang: "Monolithic Integration of 5V CMOS and High Voltage Devices" IEEE Electron Device Letters. (1993)

1992 Fiscal Year Annual Research Report

超薄膜超微細構造デバイスに関する研究

Principal Investigator

小田 俊理 東京工業大学, 工学部, 助教授 (50126314)

Research Products

[Publications] H.ZAMA: "Preparation of Highly Oriented Copper Films by Photo-Assisted Chemical Vapor Deposition Using β-Diketonate Complex," Jpn.J.Appl.Phys.31. L588-L590 (1992)

[Publications] K.FUJII: "Preparation of YBa_2Cu_3O_x Thin Films by Layer-by-Layer Metalorganic Chemical Vapor Deposition." Jpn.J.Appl.Phys.31. L787-L789 (1992)

[Publications] H.ZAMA: "In-Situ Optical Monitoring of Oxide Superconductor Growth for Layer-by-Layer Chemical Vapor Deposition." Extended Abstracts of 1992 International Conference on Solid State Devices and Materials Conference,Tsukuba.August 26-28,. 460-462 (1992)

[Publications] H.ZAMA,: "In-Situ Monitoring of Optical Reflectance Oscillation in Layer-by-Layer Chemical Vapor Deposition of Oxide Superconductor Films," Jpn.J.Appl.Phys.31. L1243-L1245 (1992)

[Publications] H.ZAMA,: "Preparation and Characterization of YBaCuO Films by Photo-Assisted Chemical Vapor Deposition," Proceedings of 6th International Conference on Ferrites,Tokyo,September 29-October 2,. (1992)

[Publications] S.ODA,: "Self-Limiting Adsorption and In-Situ Optical Monitoring for Atomic Layer Epitaxy of Oxide Superconductors," Thin Solid Films. (1992)

[Publications] H.ZAMA: "Preparation and Characterization of YBaCuO Superconducting Films by Low-Temperature Chemical Vapor Deposition Using β-Diketonate Complex and N_2O" Jpn.J.Appl.Phys.31. 3839-3843 (1992)

[Publications] S.ODA: "In-Situ Optical Monitoring of Crystal Growth in Layer-by-Layer Chemical Vapor Deposition of YBa_2Cu_3O_x" Proceedings of Sixth Topical Meeting on Crystal Growth Mechanism,. 277-282 (1992)

[Publications] S.SUGAHARA: "Electronic Structure of Si-Based Manmade Crystals" Jpn.J.Appl.Phys.32. 384-388 (1993)

[Publications] S.IMAI: "Atomic Layer Epitaxy of Si Using Atomic Hydrogen" Thin Solid Films,. 223. (1993)

[Publications] D.H.Choi: "Drastic Enlargement of Grain Size of Eximer Laser Si" Jpn.J.Appl.Phys.31. 4545-4549 (1992)

[Publications] D.F.Moore: "Fabrication of Sub-20mm Structures in Silicon Nitride Using CHF3/O2 RIE." Microcircuit Eng.17. 531-538 (1992)

[Publications] A.J.Pauza: "High-Tc Josephson Junctions by Electron Beam Irradiation" Applied Superconductivity Conference,Chicago,. 42-45 (1992)

[Publications] Y.UCHIDA: "Post Hydrogenation of LPCVD a-Si Using an Internal Hydrogen Discharge Lamp and Its Application to TFT" J.Appl.Phys.72. 3150-3154 (1992)

[Publications] M.J.Powell: "Bias Stress Induced Creation and Removal of Dangling Bond States in Amorphous Silicon TFTs" Appl.Phys.Letters,. 60. 207-209 (1992)

[Publications] W.I.Milne: "The Role of The Gate Insulator in the Defect Pool Model for hydrogenated Amorphous Silicon Thin Film Transistor Characteristics" J.Appl.Phys.(1993)

[Publications] Q.Huang: "Monolithic Integration of 5V CMOS and High Voltage Devices" IEEE Electron Device Letters. (1993)

小田俊理東京工業大学, 工学部, 助教授 (50126314)