1992 Fiscal Year Annual Research Report

半導体量子構造の作製と新物性に関する研究

Research Project

Project/Area Number	04204012
Research Institution	Kyoto University
Principal Investigator	藤田茂夫京都大学, 工学部, 教授 (30026231)
Co-Investigator(Kenkyū-buntansha)	中山隆史千葉大学, 理学部, 助手 (70189075) 藤安洋静岡大学, 工学部, 教授 (60022232) 小長井誠東京工業大学, 工学部, 教授 (40111653)
Keywords	半導体量子構造 / 超格子 / レーザ / バンド構造 / 電子状態
Research Abstract	1.マイクロ波プラズマ励起窒素添加法を開発し、ZnSeにおいて9×10^<17>cm^<-3>までの有効アクセプタ密度を持つp型結晶を得た。これをもとに、ZnCdSe/ZnSe量子井戸構造において、77Kでのレーザパルス発振を観測し得た。また、ZnSe/GaAs超格子において、各層厚が100Å以下の短周期性を持つものが得られ、界面急峻性が2分子層程度であることが明かとなった。 2.ZnSeへのNドーピングにおいて、ALE法が有効であることが明かとなった。N_2ガスをドーピング原料に用い、W-フィラメントを用いたホットワイヤ法によって、Nの取り込まれ効率が向上することが判明した。また、Ga空孔が規則配列したGa_2Se_3は吸収係数や屈折率に大きな異方性を持つことが判明し、新しい光デバイス用材料としての特長が明かとなった。 3.HWE法によるZnSeへのN添加による、1.2×10^<17>cm^<-3>の正孔密度を得た。さらに、ZnSe-ZnTe超格子により、ZnTeの場合と比べて1桁高い2.3×10^<18>cm^<-3>の正孔密度を得た。CdSSeTe-ZnS超格子EL素子を作製し、超格子の組成、周期とEL発光特性の関係を調べ、格子不整合の効果を受けたバンド構造の変化によって高輝度発光が得られることが明かとなった。 4.第一原理の理論計算により、II-VI族半導体のすべての組合せについての電子状態とバンドオフセットを求めた。これにより、変形ポテンシャルを含めて歪環境下での電子状態に関するデータベースを作成した。また、異結晶型超格子系の電子状態を第一原理の計算を用いて求め、折り返されたバルクのバンド間の相互作用は小さい、オフセットの発生要因が結晶型により異なる、等の結果を得た。

Research Products
(15 results)

All Other

All Publications (15 results)

[Publications] 呉義宏: "Optical properties of ZnCdSe/ZnSSe strained-layer quantum wells" Japanese Journal of Applied Physics. 31. 3608-3614 (1992)
[Publications] 藤田静雄: "Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe QWs and Srs" Journal of Applied Physics. 72. 5233-5239 (1992)
[Publications] 市野邦男: "Growth and characterization of strained-layer quantum wells with wide gap ZnCdSSe alloy system" Proc,5th Int.Conf.High Pressure in Semiconductor Physics. 169-171 (1993)
[Publications] 市野邦男: "Ultraviolet laser structures with wide gap ZnCdSSe alloys on Gap substrates" Journal of Electronic Materials.
[Publications] 藤田静雄: "Fabrication of II-VI semiconductor quantum well structures in ZnCdSSe alloy system" Physica B.
[Publications] 岡本保: "Anomalous anisotropy in the absorption coefficient of vacancy-ordered Ga_2Se_3" Journal of Electronic Materials. 22. 229-232 (1993)
[Publications] 小長井誠: "Self-limiting growth of Zn chalcogenides and their superlattices" Thin Solid Films.
[Publications] 竹村泰司: "Atomic layer epitaxy of N-doped ZnSe" Journal of Electronic Materials.
[Publications] 竹内要二: "ZnS:Mn EL films prepared by hot wall technique" Japanese Journal of Applied Physics. 31. 1391-1395 (1992)
[Publications] 藤安洋: "Preparation of CdSSe-ZnSe,and SrS and CdSSe-SrS superlattices by HWE and their applications to EL devices" Journal of Electronic Materials.
[Publications] 藤安洋: "Red-yellow CdSSe-ZnS,and blue-green SrS and CdSSe-SrS superlattice double insulating EL devices by hot wall epitaxy" Applied Surface Science.
[Publications] 中村高遠: "EPR investigation on ZnS:Mn thin films prepared by hot wall technique" Applied Surface Science.
[Publications] 村山美佐緒: "Electronic structuves of hetero-crystalline semiconductor superlattices" Journal of Physical Society of Japan. 61. 2419-2433 (1992)
[Publications] 中山隆史: "Valence band offset and electronic structuves of zinc-compound strained superlattices" Journal of Physical Society of Japan. 61. 2434-2441 (1992)
[Publications] 中山隆史: "Electronic structuves of heterovalent(001)semiconductor superlattices" Journal of Physical Society of Japan. 61. 2458-2468 (1992)

1992 Fiscal Year Annual Research Report

半導体量子構造の作製と新物性に関する研究

Principal Investigator

藤田 茂夫 京都大学, 工学部, 教授 (30026231)

Research Products

[Publications] 呉 義宏: "Optical properties of ZnCdSe/ZnSSe strained-layer quantum wells" Japanese Journal of Applied Physics. 31. 3608-3614 (1992)

[Publications] 藤田 静雄: "Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe QWs and Srs" Journal of Applied Physics. 72. 5233-5239 (1992)

[Publications] 市野 邦男: "Growth and characterization of strained-layer quantum wells with wide gap ZnCdSSe alloy system" Proc,5th Int.Conf.High Pressure in Semiconductor Physics. 169-171 (1993)

[Publications] 市野 邦男: "Ultraviolet laser structures with wide gap ZnCdSSe alloys on Gap substrates" Journal of Electronic Materials.

[Publications] 藤田 静雄: "Fabrication of II-VI semiconductor quantum well structures in ZnCdSSe alloy system" Physica B.

[Publications] 岡本 保: "Anomalous anisotropy in the absorption coefficient of vacancy-ordered Ga_2Se_3" Journal of Electronic Materials. 22. 229-232 (1993)

[Publications] 小長井 誠: "Self-limiting growth of Zn chalcogenides and their superlattices" Thin Solid Films.

[Publications] 竹村 泰司: "Atomic layer epitaxy of N-doped ZnSe" Journal of Electronic Materials.

[Publications] 竹内 要二: "ZnS:Mn EL films prepared by hot wall technique" Japanese Journal of Applied Physics. 31. 1391-1395 (1992)

[Publications] 藤安 洋: "Preparation of CdSSe-ZnSe,and SrS and CdSSe-SrS superlattices by HWE and their applications to EL devices" Journal of Electronic Materials.

[Publications] 藤安 洋: "Red-yellow CdSSe-ZnS,and blue-green SrS and CdSSe-SrS superlattice double insulating EL devices by hot wall epitaxy" Applied Surface Science.

[Publications] 中村 高遠: "EPR investigation on ZnS:Mn thin films prepared by hot wall technique" Applied Surface Science.

[Publications] 村山 美佐緒: "Electronic structuves of hetero-crystalline semiconductor superlattices" Journal of Physical Society of Japan. 61. 2419-2433 (1992)

[Publications] 中山 隆史: "Valence band offset and electronic structuves of zinc-compound strained superlattices" Journal of Physical Society of Japan. 61. 2434-2441 (1992)

[Publications] 中山 隆史: "Electronic structuves of heterovalent(001)semiconductor superlattices" Journal of Physical Society of Japan. 61. 2458-2468 (1992)

藤田茂夫京都大学, 工学部, 教授 (30026231)

[Publications] 呉義宏: "Optical properties of ZnCdSe/ZnSSe strained-layer quantum wells" Japanese Journal of Applied Physics. 31. 3608-3614 (1992)

[Publications] 藤田静雄: "Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe QWs and Srs" Journal of Applied Physics. 72. 5233-5239 (1992)

[Publications] 市野邦男: "Growth and characterization of strained-layer quantum wells with wide gap ZnCdSSe alloy system" Proc,5th Int.Conf.High Pressure in Semiconductor Physics. 169-171 (1993)

[Publications] 市野邦男: "Ultraviolet laser structures with wide gap ZnCdSSe alloys on Gap substrates" Journal of Electronic Materials.

[Publications] 藤田静雄: "Fabrication of II-VI semiconductor quantum well structures in ZnCdSSe alloy system" Physica B.

[Publications] 岡本保: "Anomalous anisotropy in the absorption coefficient of vacancy-ordered Ga_2Se_3" Journal of Electronic Materials. 22. 229-232 (1993)

[Publications] 小長井誠: "Self-limiting growth of Zn chalcogenides and their superlattices" Thin Solid Films.

[Publications] 竹村泰司: "Atomic layer epitaxy of N-doped ZnSe" Journal of Electronic Materials.

[Publications] 竹内要二: "ZnS:Mn EL films prepared by hot wall technique" Japanese Journal of Applied Physics. 31. 1391-1395 (1992)

[Publications] 藤安洋: "Preparation of CdSSe-ZnSe,and SrS and CdSSe-SrS superlattices by HWE and their applications to EL devices" Journal of Electronic Materials.

[Publications] 藤安洋: "Red-yellow CdSSe-ZnS,and blue-green SrS and CdSSe-SrS superlattice double insulating EL devices by hot wall epitaxy" Applied Surface Science.

[Publications] 中村高遠: "EPR investigation on ZnS:Mn thin films prepared by hot wall technique" Applied Surface Science.

[Publications] 村山美佐緒: "Electronic structuves of hetero-crystalline semiconductor superlattices" Journal of Physical Society of Japan. 61. 2419-2433 (1992)

[Publications] 中山隆史: "Valence band offset and electronic structuves of zinc-compound strained superlattices" Journal of Physical Society of Japan. 61. 2434-2441 (1992)

[Publications] 中山隆史: "Electronic structuves of heterovalent(001)semiconductor superlattices" Journal of Physical Society of Japan. 61. 2458-2468 (1992)