1993 Fiscal Year Annual Research Report

エピタキシー機構の研究

Research Project

Project/Area Number	04227107
Research Institution	Kyoto University
Principal Investigator	佐々木昭夫京都大学, 工学部, 教授 (10025900)
Co-Investigator(Kenkyū-buntansha)	沖憲典九州大学, 総理工, 教授 (70037860) 春日正伸山梨大学, 工学部, 教授 (30023170) 赤崎勇名城大学, 理工学部, 教授 (20144115) 安田幸夫名古屋大学, 工学部, 教授 (60126951) 大坂敏明早稲田大学, 理工学部, 教授 (50112991)
Keywords	初期成長過程 / 格子不整合度 / 基板面配向 / 期板傾斜角 / 原子拡散過程 / 臨界膜厚 / エピタキシー機構 / 原子レベル
Research Abstract	エピタキシー成長における(1)初期成長過程、(2)格子不整合度、バッファ層、基板面配向、傾斜角、表面活性剤の影響、および(3)成長層の歪エネルギー、成長層原子の拡散過程、転位発生の臨界膜厚等のエピタキシー機構を原子レベルで解明することを目的として研究を行った。その結果、(i)RHEED振動より格子整合系Sn/InSb成長におけるSbの表面偏析の動的過程に関する情報が得られることを明らかにした。さらに、Ge/InSb格子不整合系の成長過程について明らかにした(大坂)。(ii)Si/Geヘテロエピタキシーに対する水素原子によるGe表面偏析の抑圧効果を、ガスソースMBEの反応機構を用いて明らかにした(安田)。(iii)GaN/α-Al_2O_3ヘテロエピタキシーおけるZnOバッファ層の効果をZnOバッファ層の結晶性、原子レベルでの表面構造の面から明らかにし、高品質のGaN成長層を得るための指針を示した(赤崎)。(iv)格子不整合系ヘテロエピタキシーにおける成長様式が表面エネルギーと歪みエネルギーを考慮することにより示されること、格子不整合転位は大きな島にのみ導入されることを明らかにした。さらに、界面活性剤による成長様式制御には、表面エネルギーの低減効果が大きな役割を果たすことを示した(佐々木)。(v)CdTeのホモエピタキシーにおける双晶の形成が基板の微傾斜方向に大きく影響され、成長層表面でのダイマーの形成と関連のあることを示した(春日)。(vi)非化学量論組成混晶においても、秩序構造が形成されることをモンテカルロ法により示した。また、GaN/GaAs(001)成長について透過電子顕微鏡観察に基づき、歪み緩和、界面でのAs,Nの拡散について明らかにした(沖)。(vii)ヘテロエピタキシーにおいて形成される微小島状構造の形状、間隔を電子移動度の電子密度依存性より推定する方法を確立した(榊)。(viii)Ge/Si固相エピタキシーに際し、Si基板を水素原子で終端する事により界面での相互拡散が抑圧されることを明らかにした(城戸)。(ix)立方晶GaN成長に選択成長を適用することにより、成長種の表面拡散を制御し、結晶粒のサイズを大きくできることにより結晶性が向上できることを示した(尾鍋)。(x)ラマン分光法によりSiGe/Si格子不整合系における歪み緩和機構が、島状成長による緩和とそれに引き続く転位の発生という2段階からなることを示した。さらに、転位による格子振動モードの変化を利用した新しい転位検出方法を確立した(市村)。

Research Products

(28 results)

All Other

All Publications (28 results)

[Publications] Y.Nabetani,T.Ishikawa,S.Noda,and A.Sasaki: "Heteroepitaxial InAs Quantum Structure Grown on GaAs-Structural Characterization and PL Properties-" 12th Record of Alloy Semiconductor Physics and Electronics Symposium. 223-228 (1993)
[Publications] T.Osaka,H.Omi,K.Yamamoto,and A.Ohtake: "Surface Phase Transition and Interface Interaction in the α-Sn/InSb(111)System" Phys.Rev.B. (in press). (1994)
[Publications] 中田俊隆、大坂敏明: "透過電子回折法による化合物半導体の表面構造解析" 日本金属学会会報. 第32巻. 208-213 (1993)
[Publications] Y.Yasuda: "RHEED studies of initial stage of Ge film growth on(311)Si by gas source molecular beam epitaxy." J.Crystal Growth. 128. 319-326 (1993)
[Publications] Y.Yasuda: "Relationship between growth processes and strain relaxation in Si_<1-x>Ge_x films grown on(100)Si-(2x1)surfaces by gas source molecular beam epitaxy." J.Appl.Phys.73. 2288-2293 (1993)
[Publications] T.Detchprohm,H.Amano,K.Hiramatsu and I.Akasaki.: "“The growth of thick GaN film on sapphire substrate by using ZnO buffer layer"" J.Crystal Growth. 128. 384-390 (1993)
[Publications] A.Watanabe,T.Takeuchi,K.Hirosawa,H.Amano,K.Hiramatsu and I.Akasaki: "The growth of single crystalline GaN on a Si substrate using AlN as an intermediate layer" J.Crystal Growth. 128. 391-396 (1993)
[Publications] K.Hiramatsu,T.Detchprohm and I.Akasaki: "Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy" Japan J.Appl.Phys.32. 1528-1533 (1993)
[Publications] K.Hiramatsu,T.Detchprohm and I.Akasaki: "Stress relaxation mechanism of GaN/α-Al_2O_3 grown by VPE"" 12th Record of ASPEcs. 12. 321-326 (1993)
[Publications] K.Hirosawa,K.Hiramatsu,N.Sawaki and I.Akasaki: "Growth of single crystal Al_xGa_<1-x>N films on Si substrates by metalorganic vapor phase epitaxy" Japan.J.Appl.Phys.32. L1039-L1042 (1993)
[Publications] M.Kasuga,L.Li and Y.Yoshioka: "The Condition for Growth of Single and Twinned" Twinning in Advanced Materials(TMS Sympo.Proc.). (印刷中). (1994)
[Publications] M.Kasuga,I.Fukai,M.Amano and K.Kumeyama: "Remote Sensing of Induced Electric Current in Melt for Magnetic Czochralski Crystal Growth" Jp.J.Appl.Phys.32. L1103-L1106 (1993)
[Publications] M.Ishimaru,S.Matsumura,N.Kuwano,K.Oki: "Monte Carlo simulation of L1_1-type ordering due to surface step migration in the epitaxial growth of III-V sepiconductor alloys" Journal of Crystal Growth. 128. 499-502 (1993)
[Publications] M.Ishimaru,S.Matsumura,N.Kuwano,K.Oki: "Domain Structure of CuPt-type ordered phase in III-V semiconductor alloy" Twelfth Record of Alloy Semiconductor Physics and Electronics Symposium. 12. 99-104 (1993)
[Publications] 平松和政、伊藤茂稔、赤崎勇、桑野範之、沖憲典他: "サファイア基板上のGaNのヘテロエピタキシー機構" 日本結晶成長学会誌. 20. 346-354 (1993)
[Publications] T.Someya,H.Akiyama,Y.Kadoya,T.Noda,T.Matsusue,H.Kano and H.Sakaki: "Direction of oxygen incorporated in MBE-grown GaAs-on-AlAs interfacets and AlAs layers by secondary ion mass spectrometry" Applied Physics Letters. 63. 1924-1926 (1993)
[Publications] S.Noda,T.Yoshida,Y.Kadoya,B.Akamatsu,H.Noge,H.Kano and H.Sakaki: "Electron beam-enhanced etching of InAs in Cl gas and novel in-situ patterning of GaAs with InAs mask layer" Applied Physics Letters. 63. 1786-1788 (1993)
[Publications] T.Noda,M.R.Fahy,T.Matsusue,B.A.Joyce and H.Sakaki: "MBE growth and properties of monolayer and submonolayer InAs layer embedded in GaAs/AlAsquantum wells" Journal of Crystal Growth. 127. 783-787 (1993)
[Publications] Y.Kido,S.Miyauchi,T.Takeda,Y.Nakayama,M.Sato and K.Kusao: "Precise Determination of H Recoil Cross Sections for 1.5-3.0 MeV He^+ Ions" Nucl.Instrum.Methods. B82. 474-480 (1993)
[Publications] T.Yasue,C.Park,T.Koshikawa and Y.Kido.: "Structure Concentration Analysis of Cu/Si(111)at Room Temperature with Medium Energy Ion Scattering" Appl.Surf.Sci.70/71. 428-432 (1993)
[Publications] S.Miyoshi,N.Ohkouchi,H.Yaguchi,K.Onabe,Y.Shiraki,and R.Ito: "Highly conductive p-type cubic GaN epitaxial films on GaAs" Institute of Physics Conference Series. 129. 79-84 (1993)
[Publications] S.Miyoshi,H.Yaguchi,K.Onabe,R.Ito,and Y.Shiraki: "Metalorganic vapor phase epitaxy of GaP_<1-x>N_x alloys on GaP" Appl.Phys.Lett.63. 3506-3508 (1993)
[Publications] S.Miyoshi,H.Yaguchi,K.Onabe,Y.Shiraki,and R.Ito: "MOVPE growth of GaP_<1-x>N_x epitaxial films on GaP" Twelfth Record of Alloy Semiconductor Physics and Electronics Symposium. 341-346 (1993)
[Publications] M.Nagahara,S.Miyoshi,H.Yaguchi,K.Onabe,Y.Shiraki,and R.Ito: "MOVPE selective growth of cubic GaN in small areas on patterned GaAs(100)substrates" Extended Abstracts of the 1993 international conference on solid state devices and materials. 113-115 (1993)
[Publications] M.Nagahara,S.Miyoshi,H.Yaguchi,K.Onabe,Y.Shiraki,and R.Ito: "Selective growth of cubic GaN in small areas on patterned GaAs(100)substrates by metalorganic vapor phase epitaxy" Jpn.J.Appl.Phys.33. 694-697 (1994)
[Publications] N.Kuwano,Y.Nagatomo,K.Kobayashi,K.Oki,S.Miyoshi,H.Yaguchi,K.Onabe,and Y.Shiraki: "Transmission electron microscope observation of cubic GaN grown by metalorganic vapor phase epitaxy with dimethylhydrazine on(001)GaAs" Jpn.J.Appl.Phys.33. 18-22 (1994)
[Publications] M.Ichimura,Y.Moriguchi,A.Usami,T.Wada,A.Wakahara and A.Sasaki: "Micro-Raman characterization of molecular-beam epitaxial Ge heterolayers on Si substrates" J.Electron.Mater.22. 779-784 (1993)
[Publications] H.Sakaki,T.Noda,M.Tanaka,J.Motohisa,Y.Kadoya and N.Ikarashi: "Semiconductor Interfaces at the Sub-Nanometer Scale" Kluwer Academic Publishers, 256 (1993)

1993 Fiscal Year Annual Research Report

エピタキシー機構の研究

Principal Investigator

佐々木 昭夫 京都大学, 工学部, 教授 (10025900)

Research Products

[Publications] Y.Nabetani,T.Ishikawa,S.Noda,and A.Sasaki: "Heteroepitaxial InAs Quantum Structure Grown on GaAs-Structural Characterization and PL Properties-" 12th Record of Alloy Semiconductor Physics and Electronics Symposium. 223-228 (1993)

[Publications] T.Osaka,H.Omi,K.Yamamoto,and A.Ohtake: "Surface Phase Transition and Interface Interaction in the α-Sn/InSb(111)System" Phys.Rev.B. (in press). (1994)

[Publications] 中田俊隆、大坂敏明: "透過電子回折法による化合物半導体の表面構造解析" 日本金属学会会報. 第32巻. 208-213 (1993)

[Publications] Y.Yasuda: "RHEED studies of initial stage of Ge film growth on(311)Si by gas source molecular beam epitaxy." J.Crystal Growth. 128. 319-326 (1993)

[Publications] Y.Yasuda: "Relationship between growth processes and strain relaxation in Si_<1-x>Ge_x films grown on(100)Si-(2x1)surfaces by gas source molecular beam epitaxy." J.Appl.Phys.73. 2288-2293 (1993)

[Publications] T.Detchprohm,H.Amano,K.Hiramatsu and I.Akasaki.: "“The growth of thick GaN film on sapphire substrate by using ZnO buffer layer"" J.Crystal Growth. 128. 384-390 (1993)

[Publications] A.Watanabe,T.Takeuchi,K.Hirosawa,H.Amano,K.Hiramatsu and I.Akasaki: "The growth of single crystalline GaN on a Si substrate using AlN as an intermediate layer" J.Crystal Growth. 128. 391-396 (1993)

[Publications] K.Hiramatsu,T.Detchprohm and I.Akasaki: "Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy" Japan J.Appl.Phys.32. 1528-1533 (1993)

[Publications] K.Hiramatsu,T.Detchprohm and I.Akasaki: "Stress relaxation mechanism of GaN/α-Al_2O_3 grown by VPE"" 12th Record of ASPEcs. 12. 321-326 (1993)

[Publications] K.Hirosawa,K.Hiramatsu,N.Sawaki and I.Akasaki: "Growth of single crystal Al_xGa_<1-x>N films on Si substrates by metalorganic vapor phase epitaxy" Japan.J.Appl.Phys.32. L1039-L1042 (1993)

[Publications] M.Kasuga,L.Li and Y.Yoshioka: "The Condition for Growth of Single and Twinned" Twinning in Advanced Materials(TMS Sympo.Proc.). (印刷中). (1994)

[Publications] M.Kasuga,I.Fukai,M.Amano and K.Kumeyama: "Remote Sensing of Induced Electric Current in Melt for Magnetic Czochralski Crystal Growth" Jp.J.Appl.Phys.32. L1103-L1106 (1993)

[Publications] M.Ishimaru,S.Matsumura,N.Kuwano,K.Oki: "Monte Carlo simulation of L1_1-type ordering due to surface step migration in the epitaxial growth of III-V sepiconductor alloys" Journal of Crystal Growth. 128. 499-502 (1993)

[Publications] M.Ishimaru,S.Matsumura,N.Kuwano,K.Oki: "Domain Structure of CuPt-type ordered phase in III-V semiconductor alloy" Twelfth Record of Alloy Semiconductor Physics and Electronics Symposium. 12. 99-104 (1993)

[Publications] 平松和政、伊藤茂稔、赤崎勇、桑野範之、沖憲典 他: "サファイア基板上のGaNのヘテロエピタキシー機構" 日本結晶成長学会誌. 20. 346-354 (1993)

[Publications] T.Someya,H.Akiyama,Y.Kadoya,T.Noda,T.Matsusue,H.Kano and H.Sakaki: "Direction of oxygen incorporated in MBE-grown GaAs-on-AlAs interfacets and AlAs layers by secondary ion mass spectrometry" Applied Physics Letters. 63. 1924-1926 (1993)

[Publications] S.Noda,T.Yoshida,Y.Kadoya,B.Akamatsu,H.Noge,H.Kano and H.Sakaki: "Electron beam-enhanced etching of InAs in Cl gas and novel in-situ patterning of GaAs with InAs mask layer" Applied Physics Letters. 63. 1786-1788 (1993)

[Publications] T.Noda,M.R.Fahy,T.Matsusue,B.A.Joyce and H.Sakaki: "MBE growth and properties of monolayer and submonolayer InAs layer embedded in GaAs/AlAsquantum wells" Journal of Crystal Growth. 127. 783-787 (1993)

[Publications] Y.Kido,S.Miyauchi,T.Takeda,Y.Nakayama,M.Sato and K.Kusao: "Precise Determination of H Recoil Cross Sections for 1.5-3.0 MeV He^+ Ions" Nucl.Instrum.Methods. B82. 474-480 (1993)

[Publications] T.Yasue,C.Park,T.Koshikawa and Y.Kido.: "Structure Concentration Analysis of Cu/Si(111)at Room Temperature with Medium Energy Ion Scattering" Appl.Surf.Sci.70/71. 428-432 (1993)

[Publications] S.Miyoshi,N.Ohkouchi,H.Yaguchi,K.Onabe,Y.Shiraki,and R.Ito: "Highly conductive p-type cubic GaN epitaxial films on GaAs" Institute of Physics Conference Series. 129. 79-84 (1993)

[Publications] S.Miyoshi,H.Yaguchi,K.Onabe,R.Ito,and Y.Shiraki: "Metalorganic vapor phase epitaxy of GaP_<1-x>N_x alloys on GaP" Appl.Phys.Lett.63. 3506-3508 (1993)

[Publications] S.Miyoshi,H.Yaguchi,K.Onabe,Y.Shiraki,and R.Ito: "MOVPE growth of GaP_<1-x>N_x epitaxial films on GaP" Twelfth Record of Alloy Semiconductor Physics and Electronics Symposium. 341-346 (1993)

[Publications] M.Nagahara,S.Miyoshi,H.Yaguchi,K.Onabe,Y.Shiraki,and R.Ito: "MOVPE selective growth of cubic GaN in small areas on patterned GaAs(100)substrates" Extended Abstracts of the 1993 international conference on solid state devices and materials. 113-115 (1993)

[Publications] M.Nagahara,S.Miyoshi,H.Yaguchi,K.Onabe,Y.Shiraki,and R.Ito: "Selective growth of cubic GaN in small areas on patterned GaAs(100)substrates by metalorganic vapor phase epitaxy" Jpn.J.Appl.Phys.33. 694-697 (1994)

[Publications] N.Kuwano,Y.Nagatomo,K.Kobayashi,K.Oki,S.Miyoshi,H.Yaguchi,K.Onabe,and Y.Shiraki: "Transmission electron microscope observation of cubic GaN grown by metalorganic vapor phase epitaxy with dimethylhydrazine on(001)GaAs" Jpn.J.Appl.Phys.33. 18-22 (1994)

[Publications] M.Ichimura,Y.Moriguchi,A.Usami,T.Wada,A.Wakahara and A.Sasaki: "Micro-Raman characterization of molecular-beam epitaxial Ge heterolayers on Si substrates" J.Electron.Mater.22. 779-784 (1993)

[Publications] H.Sakaki,T.Noda,M.Tanaka,J.Motohisa,Y.Kadoya and N.Ikarashi: "Semiconductor Interfaces at the Sub-Nanometer Scale" Kluwer Academic Publishers, 256 (1993)

佐々木昭夫京都大学, 工学部, 教授 (10025900)

[Publications] 平松和政、伊藤茂稔、赤崎勇、桑野範之、沖憲典他: "サファイア基板上のGaNのヘテロエピタキシー機構" 日本結晶成長学会誌. 20. 346-354 (1993)